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产品型号TISP3115T3BJR-S的Datasheet PDF文件预览

TISP3070T3BJ THRU TISP3395T3BJ  
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS  
TISP3xxxT3BJ Overvoltage Protector Series  
Dual High Current Protectors in a Space Efficient  
Package  
SMB Package (Top View)  
- 2 x 100 A 10/560 Current Rating  
1
3
- Modified 3-pin SMB (DO-214AA) Package  
50 % Space Saving over Two SMBs  
- Y Configurations with Two SMB Packages  
2 x 80 A, 10/1000 . . . .TISP3xxxT3BJ + TISP4xxxJ1BJ  
2 x 100 A, 10/700 . . . .TISP3xxxT3BJ + TISP4xxxH3BJ  
2
MDXXCJA  
Device Symbol  
Ion-Implanted Breakdown Region  
- Precise and Stable Voltage  
1
3
(T or R)  
(T or R)  
- Low Voltage Overshoot under Surge  
VDRM  
V(BO)  
Device  
V
V
TISP3070T3  
TISP3080T3  
TISP3095T3  
TISP3115T3  
TISP3125T3  
TISP3145T3  
TISP3165T3  
TISP3180T3  
TISP3200T3  
TISP3219T3  
TISP3250T3  
TISP3290T3  
TISP3350T3  
TISP3395T3  
58  
70  
65  
80  
75  
95  
SD3TAA  
2
(G)  
90  
115  
125  
145  
165  
180  
200  
219  
250  
290  
350  
395  
100  
120  
135  
145  
155  
180  
190  
220  
275  
320  
Rated for International Surge Wave Shapes  
IPPSM  
Wave Shape  
Standard  
A
2/10  
8/20  
GR-1089-CORE  
IEC 61000-4-5  
250  
250  
150  
120  
100  
80  
10/160  
10/700  
10/560  
10/1000  
TIA/EIA-IS-968 (FCC Part 68)  
ITU-T K.20/.21/.45  
TIA/EIA-IS-968 (FCC Part 68)  
GR-1089-CORE  
.......................................UL Recognized Component  
Description  
These dual bidirectional thyristor devices protect central office, access and customer premise equipment against overvoltages on the  
telecom line. The TISP3xxxT3BJ is available in a wide range of voltages and has an 80 A 10/1000 current rating. These protectors have  
been specified mindful of the following standards and recommendations: GR-1089-CORE, TIA/EIA-IS-968, UL 60950, EN 60950, IEC  
60950, ITU-T K.20, K.21 and K.45. The TISP3350T3BJ meets the FCC Part 68 “B” ringer voltage requirement (VDRM = ±275 V). Housed  
in a 3-pin modified SMB (DO-214AA) package, the TISP3xxxT3BJ range is space efficient solution for protection designs of 80 A or less  
which use multiple SMBs.  
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above  
V
DRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device  
switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted cur-  
rent falls below the holding current, IH, level the device switches off and restores normal system operation.  
How To Order  
Device  
Package  
Carrier  
Order As  
TISP3xxxT3BJ  
BJ (3-pin modified SMB/DO-214AA J-Bend)  
R (Embossed Tape Reeled)  
TISP3xxxT3BJR-S  
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
SEPTEMBER 2001 - REVISED JANUARY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP3xxxT3BJ Overvoltage Protector Series  
Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)  
A
Rating  
Symbol  
Value  
Unit  
’3070  
’3080  
’3095  
’3115  
’3125  
’3145  
’3165  
’3180  
’3200  
’3219  
’3250  
’3290  
’3350  
’3395  
±58  
±65  
±75  
±90  
±100  
±120  
±135  
±145  
±155  
±180  
±190  
±220  
±275  
±320  
Repetitive peak off-state voltage, (terminals 1-2 and 3-2)  
VDRM  
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)  
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)  
2x250  
2x250  
2x150  
2x120  
2x120  
2x100  
2x80  
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)  
10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 µs voltage wave shape)  
5/310 (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/.45/.21)  
5/320 (TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 µs voltage wave shape)  
10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 µs voltage wave shape)  
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)  
Non-repetitive peak on-state current (see Notes 1 and 2)  
IPPSM  
A
2x25  
2x30  
2x1.2  
50 Hz, 1 cycle  
ITSM  
A
60 Hz, 1 cycle  
1000 s 50 Hz/60 Hz a.c.  
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A  
Junction temperature  
diT/dt  
TJ  
500  
A/µs  
°C  
-40 to +150  
-65 to +150  
Storage temperature range  
T
°C  
stg  
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C.  
2. These non-repetitive rated currents are peak values of either polarity. The rated current values are applied to the terminals 1 and  
3 simultaneously (in this case the terminal 2 return current will be the sum of the currents applied to the terminals 1 and 3). The  
surge may be repeated after the device returns to its initial conditions.  
Recommended Operating Conditions  
Component  
Min  
Typ  
Max  
Unit  
Series resistor for GR-1089-CORE first-level surge survival  
5
Series resistor for ITU-T recommendation K.20/.45/.21(coordination with 400 V GDT at 4 kV)  
R1, R2 Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 9/720 survival  
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/560 survival  
6.4  
0
0
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/160 survival  
2.5  
SEPTEMBER 2001 - REVISED JANUARY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP3xxxT3BJ Overvoltage Protector Series  
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, T = 25 °C  
A
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
Repetitive peak off-  
state current  
TA = 25 °C  
TA = 85 °C  
±5  
IDRM  
VD = VDRM  
µA  
±10  
’3070  
’3080  
’3095  
’3115  
’3125  
’3145  
’3165  
’3180  
’3200  
’3219  
’3250  
’3290  
’3350  
’3395  
±70  
±80  
±95  
±115  
±125  
±145  
±165  
±180  
±200  
±219  
±250  
±290  
±350  
±395  
V(BO) AC breakover voltage  
dv/dt = ±250 V/ms, R SOURCE = 300  
V
’3070  
’3080  
’3095  
’3115  
’3125  
’3145  
’3165  
’3180  
’3200  
’3219  
’3250  
’3290  
’3350  
’3395  
±81  
±91  
±107  
±128  
±138  
±159  
±179  
±195  
±215  
±234  
±265  
±304  
±361  
±403  
dv/dt ±1000 V/µs, Linear voltage ramp,  
Maximum ramp value = ±500 V  
Ramp breakover  
V(BO)  
V
voltage  
di/dt = ±20 A/µs, Linear current ramp,  
Maximum ramp value = ±10 A  
I(BO) Breakover current  
dv/dt = ±250 V/ms, R SOURCE = 300 Ω  
IT = ±5 A, di/dt = +/-30 mA/ms  
±800  
mA  
mA  
IH  
dv/dt  
ID  
Holding current  
±150  
±5  
Critical rate of rise of  
off-state voltage  
Linear voltage ramp, Maximum ramp value < 0.85VDRM  
kV/µs  
µA  
Off-state current  
VD = ±50 V  
TA = 85 °C  
±10  
SEPTEMBER 2001 - REVISED JANUARY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP3xxxT3BJ Overvoltage Protector Series  
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, T = 25 °C (Continued)  
A
Parameter  
Test Conditions  
f = 1 MHz, Vd = 1 V rms, VD = 0,  
Min  
Typ  
Max  
Unit  
‘3070 thru ‘3095  
‘3115 thru ‘3219  
‘3250 thru ‘3395  
95  
69  
51  
90  
63  
46  
83  
59  
42  
43  
29  
20  
16  
114  
83  
62  
‘3070 thru ‘3095  
‘3115 thru ‘3219  
‘3250 thru ‘3395  
f = 1 MHz, Vd = 1 V rms, VD = -1 V  
f = 1 MHz, Vd = 1 V rms, VD = -2 V  
f = 1 MHz, Vd = 1 V rms, VD = -50 V  
108  
76  
55  
‘3070 thru ‘3095  
‘3115 thru ‘3219  
‘3250 thru ‘3395  
100  
70  
Coff Off-state capacitance  
pF  
51  
51  
‘3070 thru ‘3095  
‘3115 thru ‘3219  
‘3250 thru ‘3395  
35  
24  
19  
‘3250 thru ‘3395  
f = 1 MHz, Vd = 1 V rms, VD = -100 V  
(see Note 3)  
NOTE 3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured  
third terminal is connected to the guard terminal of the bridge.  
Thermal Characteristics  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
EIA/JESD51-3 PCB, IT = ITSM(1000)  
,
RθJA Junction to free air thermal resistance  
90  
°C/W  
TA = 25 °C, (see Note 4)  
NOTE 4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.  
SEPTEMBER 2001 - REVISED JANUARY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP3xxxT3BJ Overvoltage Protector Series  
Parameter Measurement Information  
+i  
Quadrant I  
Switching  
IPPSM  
Characteristic  
ITSM  
IT  
V(BO)  
VT  
IH  
IDRM  
ID  
VDRM  
VD  
-v  
+v  
ID  
VD  
VDRM  
IDRM  
IH  
VT  
V(BO)  
IT  
ITSM  
I
Quadrant III  
IPPSM  
Switching  
Characteristic  
-i  
PM4XAE  
Figure 1. Voltage-Current Characteristic for Terminal Pairs 1-2 and 3-2  
All Measurements are Referenced to Terminal 2  
SEPTEMBER 2001 - REVISED JANUARY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP3xxxT3BJ Overvoltage Protector Series  
Typical Characteristics  
OFF-STATE CURRENT  
vs  
NORMALIZED BREAKOVER VOLTAGE  
vs  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
TC4AH3AB  
TC4AH3AA  
1.15  
10  
VD = ±50 V  
'3115 thru '3219  
1.10  
1
'3070 thru '3095  
1.05  
0·1  
'3250 thru'3395  
1.00  
0·01  
0.95  
0.90  
0·001  
-25  
0
25  
50  
75  
100 125 150  
-25  
0
25  
50  
75  
100 125 150  
TJ - Junction Temperature - °C  
TJ - Junction Temperature - °C  
Figure 2.  
Figure 3.  
ON-STATE CURRENT  
vs  
NORMALIZED HOLDING CURRENT  
vs  
ON-STATE VOLTAG E  
JUNCTION TEMPERATURE  
TC4AH3AC  
TC3T3AA  
2.0  
1.5  
200  
150  
TA = 25 °C  
tW = 100 µs  
100  
70  
50  
40  
30  
1.0  
0.9  
20  
15  
0.8  
0.7  
10  
7
5
4
3
0.6  
0.5  
2
1.5  
0.4  
1
-25  
0
25  
50  
75  
100 125 150  
0.7  
1
1.5  
2
3
41 5  
7
0
15 20  
T -  
VT - On-State Voltage - V  
Junction Temperature - °C  
J
Figure 4.  
Figure 5.  
SEPTEMBER 2001 - REVISED JANUARY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP3xxxT3BJ Overvoltage Protector Series  
Typical Characteristics  
OFF-STATE CAPACITANCE  
vs  
CAPACITANCE  
vs  
OFF-STATE VOLTAGE  
RATED REPETITIVE PEAK OFF-STATE VOLTAGE  
TC4AH3AD  
TC4AH3AF  
90  
80  
TJ = 25 °C  
80  
70  
60  
50  
40  
30  
VD = 2 V  
Vd = 1 V rms  
70  
60  
'3070 thru  
'3095  
50  
40  
'3115 thru  
'3219  
30  
'3250 thru  
'3395  
20  
15  
10  
0.5  
1
2
3
5
10  
20 30 50 100150  
VD - Off-state Voltage - V  
50 60 70 80 90100  
150  
200 250 300 350  
VDRM - Repetivive Peak Off-State Voltage - V  
Figure 6.  
Figure 7.  
SEPTEMBER 2001 - REVISED JANUARY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP3xxxT3BJ Overvoltage Protector Series  
Rating and Thermal Information  
VDRM DERATING FACTOR  
NON-REPETITIVE PEAK ON-STATE CURRENT  
vs  
vs  
MINIMUM AMBIENT TEMPERATURE  
CURRENT DURATION  
TI3TAA  
TI4AH3AB  
1.00  
0.99  
0.98  
0.97  
0.96  
0.95  
0.94  
0.93  
0.92  
20  
15  
VGEN = 600 V rms, 50/60 Hz  
GEN = 1.4*VGEN/ITSM(t)  
R
EIA/JESD51-2 ENVIRONMENT  
EIA/JESD51-3 PCB, T = 25 °C  
10  
9
8
7
6
A
SIMULTANEOUS OPERATION  
OF R AND T TERMINALS. G  
TERMINALCURRENT = 2xITSM(t)  
'3115  
thru  
'3219  
5
4
'3070  
thru  
'3095  
3
2
'3250  
thru  
'3395  
1.5  
1
0·1  
-40 -35 -30 -25 -20 -15 -10 -5  
0
5
10 15 20 25  
1
10  
100  
1000  
t - Current Duration - s  
TAMIN - Minimum Ambient Temperature - °C  
Figure 8.  
Figure 9.  
SEPTEMBER 2001 - REVISED JANUARY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
TISP3xxxT3BJ Overvoltage Protector Series  
MECHANICAL DATA  
Recommended Printed Wiring Land Pattern Dimensions  
SMB03 Pad Size  
2.50  
(.099)  
1.00  
(.039)  
2.80  
(.110)  
0.80  
(.032)  
1.75  
(.069)  
1.75  
(.069)  
MILLIMETERS  
(INCHES)  
DIMENSIONS ARE:  
MD3BJAAA  
Device Symbolization Code  
Devices will be coded as below.  
Device  
Symbolization Code  
3070T3  
TISP3070T3  
TISP3080T3  
TISP3095T3  
TISP3115T3  
TISP3125T3  
TISP3145T3  
TISP3165T3  
TISP3180T3  
TISP3200T3  
TISP3219T3  
TISP3250T3  
TISP3290T3  
TISP3350T3  
TISP3395T3  
3080T3  
3095T3  
3115T3  
3125T3  
3145T3  
3165T3  
3180T3  
3200T3  
3219T3  
3250T3  
3290T3  
3350T3  
3395T3  
Carrier Information  
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed  
tape.  
Package  
Carrier  
Standard Quantity  
SMB  
Embossed Tape Reel Pack  
3000  
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.  
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.  
SEPTEMBER 2001 - REVISED JANUARY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
配单直通车
TISP3115T3BJR-S产品参数
型号:TISP3115T3BJR-S
是否Rohs认证: 符合
生命周期:Obsolete
零件包装代码:DO-214AA
包装说明:ROHS COMPLIANT, PLASTIC, SMB, MODIFIED DO-214AA, 3 PIN
针数:2
Reach Compliance Code:not_compliant
ECCN代码:EAR99
HTS代码:8541.30.00.80
风险等级:5.76
其他特性:UL RECOGNIZED
最大转折电压:115 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大断态直流电压:90 V
JESD-30 代码:R-PDSO-C3
通态非重复峰值电流:30 A
元件数量:2
端子数量:3
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
认证状态:Not Qualified
表面贴装:YES
端子形式:C BEND
端子位置:DUAL
处于峰值回流温度下的最长时间:40
触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1
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