TISP4015L1AJR-S中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ

TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ

VERSIONS

*RoHS COMPLIANT

AVAILABLE

VERY LOW VOLTAGE

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

Low Capacitance

SMA Package (Top View)

‘4015 ................................................................................... 28 pF

‘4030 ................................................................................... 27 pF

‘4040 ................................................................................... 23 pF

Digital Line Signal Level Protection

R (B)

1

2 T (A)

- ISDN

- xDSL

Safety Extra Low Voltage, SELV, values

MDXXCCE

V

(BO)

SMB Package (Top View)

DRM

Device

V

‘4015

‘4030

‘4040

± 8

± 15

± 30

± 40

R(B) 1

2 T(A)

± 15

± 25

MDXXBGF

30 A “L” Series specified for:

- ITU-T recommendations K.20, K.45, K.21

- FCC Part 68 and GR-1089-CORE

Device Symbol

T

I

TSP

A

Wave Shape

Standard

2/10 µs

8/20 µs

GR-1089-CORE

IEC 61000-4-5

FCC Part 68

150

120

65

10/160 µs

SD4XAA

ITU-T K.20/45/21

FCC Part 68

R

10/700 µs

45

Terminals T and R correspond to the

alternative line designators of A and B

10/560 µs

FCC Part 68

35

30

10/1000 µs

GR-1089-CORE

Available in SMA and SMB Packages

SMA Saves 25 % Placement Area Over SMB

............................................ UL Recognized Components

Description

These devices are designed to limit overvoltages on digital telecommunication lines. Overvoltages are normally caused by a.c. power system

or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is

typically used for the protection of transformer windings and low voltage electronics.

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until

the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state

causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current

falls below the holding current value.

How To Order

For Standard

For Lead Free

Termination Finish Termination Finish

Device

Package

Carrier

Order As

SMA/DO-214AC J-Bend (AJ)

SMB/DO-214AA J-Bend (BJ)

TISP40xxL1AJR

TISP40xxL1BJR

TISP40xxL1AJR-S

TISP40xxL1BJR-S

Embossed Tape Reeled

(R)

TISP40xxL1

Insert xx value corresponding to protection voltages of 15 V, 30 V and 40 V.

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

Absolute Maximum Ratings, T = 25 °C (Unless Otherwise Noted)

A

Rating

Symbol

Value

Unit

‘4015

‘4030

‘4040

±8

Repetitive peak off-state voltage

V

±15

± 25

V

DRM

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

2/10 µs (Te lcordia GR-1089-CORE, 2/10 µs voltage wave shape)

± 150

± 120

± 65

± 45

± 35

± 30

8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)

10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)

I

A

TSP

5/310 µs (ITU-T K.20/45/21, 10/700 µs voltage wave shape)

5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)

10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)

10/1000 µs (Te lcordia GR-1089-CORE, 10/1000 µs voltage wave shape)

Non-repetitive peak on-state current (see Notes 1 and 2)

20 ms (50 Hz) full sine wave

16.7 ms (60 Hz) full sine wave

0.2 s 50 Hz/60 Hz a.c.

20

22

13

5

I

A

TSM

2 s 50 Hz/60 Hz a.c.

1000 s 50 Hz/60 Hz a.c.

1.8

Initial rate of rise of current (2/10 waveshape)

Maximum junction temperature

di/dt

130

150

A/µs

°C

T

JM

Storage temperature range

T

-65 to +150

°C

stg

NOTES: 1. Initially, the device must be in thermal equilibrium with T = 25 °C.

J

2. The surge may be repeated after the device returns to its initial conditions.

Electrical Characteristics, T = 25 °C (Unless Otherwise Noted)

A

Parameter

Test Conditions

Min

Typ

Max

Unit

Repetitive peak off-

state current

I

V

= V

DRM

±5

µA

DRM

D

‘4015

‘4030

‘4040

±15

±30

±40

V

Breakover voltage

di/dt = ±0.8 A/ms

V

(BO)

dv/dt = ±1000 V/µs, Linear voltage ramp,

Maximum ramp value = ±500 V

‘4015

‘4030

‘4040

±34

±50

±63

Impulse breakover

voltage

V

(BO)

di/dt = ±5 A/µs, Linear current ramp,

Maximum ramp value = ±10 A

I

Breakover current

Off-state current

Holding current

di/dt = ±0.8 A/ms

±0.8

±2

A

(BO)

V

= ± 6 V

‘4015

‘4030

‘4040

D

I

V

= ± 13 V

= ± 22 V

µA

mA

D

V

D

I

I = ±5 A, di/dt = +/-30 mA/ms

±50

H

T

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

Electrical Characteristics, T = 25 °C (Unless Otherwise Noted) (Continued)

A

Parameter

Test Conditions

f = 1 MHz, V = 1 V rms, V = 0

Min

Typ

Max

Unit

‘4015

‘4030

‘4040

‘4015

‘4030

‘4040

‘4015

‘4030

‘4040

28

27

23

25

24

20

23

22

18

36

35

29

33

31

26

30

29

24

d

D

f = 1 MHz, V = 1 V rms, V = 1 V

d

D

C

Off-state capacitance

pF

off

f = 1 MHz, V = 1 V rms, V = 2 V

d

D

Thermal Characteristics

Min

Typ

Max

Unit

Parameter

Test Conditions

EIA/JESD51-3 PCB, I = I

,

SMA

SMB

125

120

T

TSM(1000)

T = 25 °C, (seeNote 3)

A

R_θJA

Junction to free air thermal resistance

°C/W

265 mm x 210 mm populated line card, SMA

4-layer PCB, I = I , T = 25 °C SMB

60

55

T

TSM(1000)

A

NOTE 3: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

Parameter Measurement Information

+i

Quadrant I

Switching

I_TSP

Characteristic

I_TSM

V_(BO)

I_(BO)

I_H

I_DRM

I_D

V_DRM

V_D

+v

-v

I_D

V_D

V_DRM

I_DRM

I_H

I_(BO)

V_(BO)

I_TSM

I

Quadrant III

I_TSP

Switching

Characteristic

PM4AC

-i

Figure 1. Voltage-Current Characteristic for T and R Terminals

All Measurements are Referenced to the R Terminal

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

Typical Characteristics

OFF-STATE CURRENT

vs

NORMALIZED BREAKOVER VOLTAGE

vs

JUNCTION TEMPERATURE

TC4LVE

TC4LVC

1.10

1.05

1.00

0.95

10000

1000

100

10

'4040L1

'4030L1

'4015L1

'4030L1

'4040L1

1

'4015L1

0.1

0

50

100

150

-25

0

25

50

75

100

125

150

T_A– Ambient Temperature – °C

T_J- Junction Temperature - °C

Figure 2.

Figure 3.

ON-STATE CURRENT

vs

ON-STATE VOLTAGE

NORMALIZED HOLDING CURRENT

vs

JUNCTION TEMPERATURE

TC4LVD

TC4LVB

2.0

1.5

70

50

30

20

10

7

5

1.0

0.9

3

2

0.8

0.7

1

0.7

0.5

0.6

0.5

0.3

0.2

0.1

0.4

1

2

3

4

5

6

-25

0

25

50

75

100 125 150

V_T– On-State Voltage – V

T_J- Junction Temperature - °C

Figure 4.

Figure 5.

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

Typical Characteristics

CAPACITANCE

vs

OFF-STATE VOLTAGE

TC4L1AA

30

T_J= 25 °C

V_d= 1 V

'4015

20

15

'4030

'4040

10

0.01 0.02 0.05 0.1 0.2 0.5

1

2 3

5

10 2030

V_D- Off-state Voltage - V

Figure 6.

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

Rating and Thermal Information

NON-REPETITIVE PEAK ON-STATE CURRENT

vs

CURRENT DURATION

TI4MAI

30

V_GEN= 600 Vrms, 50/60 Hz

R

_GEN= 1.4*V_GEN/I_TSM(t)

20

15

EIA/JESD51-2 ENVIRONMENT

EIA/JESD51-3 PCB

T_A= 25 °C

10

9

8

7

6

5

4

3

2

1.5

0.01

0.1

1

10

100

1000

t - Current Duration - s

Figure 7.

V_DRMDERATING FACTOR

vs

MINIMUM AMBIENT TEMPERATURE

TI4LVA

1.00

0.99

0.98

0.97

0.96

0.95

'4015L1

'4030L1

'4040L1

-40 -35 -30 -25 -20 -15 -10 -5

0

5

10 15 20 25

T_AMIN- Minimum Ambient Temperature - °C

Figure 8.

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

APPLICATIONS INFORMATION

Transformer Protection

The inductance of a transformer winding reduces considerably when the magnetic core material saturates. Saturation occurs when the

magnetizing current through the winding inductance exceeds a certain value. It should be noted that this is a different current to the

transformed current component from primary to secondary. The standard inductance-current relationship is:

di

E = – L----

(_dt(

where:

L = unsaturated inductance value in H

di = current change in A

dt = time period in s for current change di

E = winding voltage in V

Rearranging this equation and working large ∆ changes to saturation gives the useful circuit relationship of:

E x ∆t = L x ∆i

A transformer winding volt-second value for saturation gives the designer an idea of circuit operation under overvoltage conditions. The

volt-second value is not normally quoted, but most manufacturers should provide it on request. A 50 Vµs winding will support rectangular

voltage pulses of 50 V for 1 µs, 25 V for 2 µs, 1 V for 50 µs and so on. Once the transformer saturates, primary to secondary coupling will be

lost and the winding resistance, RW, shunts the overvoltage protector, Th1 - see Figure 9. This saturated condition is a concern for long

duration impulses and a.c. fault conditions because the current capability of the winding wire may be exceeded. For example, if the on-state

voltage of the protector is 1 V and the winding resistance is 0.2 Ω, the winding would bypass a current of 1/0.2 = 5 A, even though the

protector was in the low voltage condition.

T1

UNSATURATED

L

Th1

RW

SATURATED

AI4XAO

Figure 9. Transformer Saturation

Figure 10 shows a generic protection arrangement. Resistors R1 and R2, together with the overcurrent protection, prevent excessive winding

current flow under a.c. conditions. Normally these resistors would only be needed for special cases, e.g. some T1/E1 designs. Alternatively, a

split winding could be used with a single resistor connecting the windings. This resistor could be by-passed by a small capacitor to reduce

signal attenuation.

OVER-

AI4XAN

CURRENT

PROTECTION

R1

T1

Th1

SIGNAL

LINE

R2

Figure 10. Transformer Winding Protection

Overcurrent protection upstream from the overvoltage protector can be fuse, PTC or thick film resistor based. For very high frequency circuits,

fuse inductance due to spiral wound elements may need to be evaluated.

TISP^®Device Voltage Selection

Normally, the working voltage value of the protector, V

equipment temperature range. This would give the lowest possible protection voltage, V

the transformer winding and increase the time to core saturation.

, would be chosen to be just greater than the peak signal amplitude over the

DRM

. This would minimize the peak voltage applied to

(BO)

In high frequency circuits, there are two further considerations. Low voltage protectors have a higher capacitance than high voltage protectors.

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

TISP^®Device Voltage Selection (Continued)

So a higher voltage protector might be chosen specifically to reduce the protector capacitive effects on the signal.

Low energy short duration spikes will be clipped by the protector. This will extend the spike duration and the data loss time. A higher protector

voltage will reduce the data loss time. Generally, this will not be a significant factor for inter-conductor protection.

However, clipping is significant for protection to ground, where there is continuous low-level a.c. common mode induction. In some cases the

induced a.c. voltage can be over 10 V. Repetitive clipping at the induced a.c. peaks by the protector would cause severe data corruption. The

expected a.c. voltage induced should be added to the maximum signal level for setting the protector V

value.

DRM

2-Wire Digital Systems

Typical systems using a single twisted pair connection are: Integrated Services Digital Network (ISDN) and Pair Gain.

Signal level protection at the transformer winding is given by protectors Th3 and Th5. Typically these could be TISP4015L1 type devices with a

15 V voltage protection level.

LINE

SIGNAL

Th3

SIGNAL

Th5

T1

T2

Th1

Th2

OVER-

CURRENT

PROTECTION

OVER-

CURRENT

PROTECTION

C1

C2

Th4

TRANSFORMER COUPLED TWO-WIRE INTERFACE

Figure 11. 2-Wire System

DC FEED

DC SUPPLY

AI4XAL

Two line protection circuits are given; one referenced to ground using Th1 and Th2 (left) and the other inter-wire using protector Th4 (right) - see

Figure 11. For ISDN circuits compliant to ETSI ETR 080:1993, ranges 1 and 2 can be protected by the following device types: TISP4095M3,

TISP4095H3, TISP3095H3 (combines Th1 and Th2) and TISP7095H3 (combines Th1, Th2 and Th4). Ranges 4 through 5 can be protected by:

TISP4145M3, TISP4145H3, TISP3145H3 (combines Th1 and Th2) and TISP7145H3 (combines Th1, Th2 and Th4). Device surge requirement, H

or M, will be set by the overcurrent protection components and the standards complied with. Protection of just the d.c. feed to ETSI ranges is

covered in the TISP5xxxH3 data sheet.

When loop test voltages exceed the normal d.c. feed levels, higher voltage protectors need to be selected. For two terminal protectors, for

levels up to 190 V (135 V rms) the TISP4250, H3 or M3, can be used and for 210 V (150 V rms) the TISP4290, H3 or M3, can be used.

In Pair Gain systems, the protector V

DRM

is normally set by the d.c. feed value. The following series of devices have a 160 V working voltage at

25 °C: TISP4220M3, TISP4220H3, TISP3210H3 (combines Th1 and Th2) and TISP7210H3 (combines Th1, Th2 and Th4). These devices can be

used on 150 V d.c. feed voltages down to an ambient temperature of -25 °C. Where the subscriber equipment may be exposed to POTS (Plain

Old Telephone Service) voltage levels, protector Th4 needs a higher working voltage of about 275 V. Suitable device types are: TISP4350M3,

TISP4350H3, TISP3350H3 (combines Th1 and Th2) and TISP7350H3 (combines Th1, Th2 and Th4).

The overcurrent protection for the overvoltage protector can be fuse, PTC or thick film resistor based. Its a.c. limiting capability should be less

than the ratings of the intended overvoltage protector. Equipment complying with the year 2000 international K.20, K.21 and K.45

recommendations from the ITU-T, may be required to demonstrate protection coordination with the intended primary protector. Without adding

series resistance, a simple series fuse overcurrent protection is likely to fail the equipment for this part of the recommendation.

If the d.c. feed consists of equal magnitude positive and negative voltage supplies, appropriately connected TISP5xxxH3 unidirectional

protectors could replace Th1 and Th2.

4-Wire Digital Systems

A typical system using a two twisted pair connection is the High-bit-rate Digital Subscriber Line (HDSL) and the “S” interface of ISDN.

Figure 12 shows a generic two line system. HDSL tends to have ground referenced protection at both ends of the lines (Th1, Th2, Th3 and Th4).

The ISDN “S” interface is often inside the premises and simple inter-wire protection is used at the terminating adaptor (Th7 and Th8). In all

cases, signal protection, Th5, Th6, Th9 and Th10, can be TISP4015L1 type devices with a 15 V voltage protection level.

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

4-Wire Digital Systems (Continued)

LINE 1

SIGNAL

Th9

T1

T3

Th1

Th2

OVER-

CURRENT

PROTECTION

OVER-

CURRENT

Th5

Th7

PROTECTION

DC FEED

T2

DC SUPPLY

T4

LINE 2

SIGNAL

Th6

SIGNAL

Th10

Th3

Th4

OVER-

CURRENT

OVER-

CURRENT

Th8

PROTECTION

AI4XAM

TRANSFORMER COUPLED FOUR-WIRE INTERFACE

Figure 12. 4-Wire System

For an HDSL d.c. feed voltage of 180 V or less and operation down to an ambient of -25 °C, the following Th1, Th2, Th3 and Th4 protectors

are suitable: TISP4250M3 or TISP4250H3, TISP3250H3 (combines Th1 and Th2 or Th3 and Th4) and TISP7250H3 (combines Th1, Th2 and

Th7 or Th3, Th4 and Th8). Possible overcurrent protection components are covered in the 2-wire digital systems clause.

For ISDN interfaces powered with ±40 V (ETSI, ETS 300 012 1992) the following Th1, Th2, Th3 and Th4 protectors are suitable: TISP4070M3

or TISP4070H3 or TISP4070L3, TISP3070F3 or TISP3070H3 (combines Th1 and Th2 or Th3 and Th4) and TISP7070F3 or TISP7070H3

(combines Th1, Th2 and Th7 or Th3, Th4 and Th8). At the terminating adaptor, the Th7 and Th8 protectors do not “see” the d.c. feed voltage

and should be selected to not clip the maximum signal level. Generally, the TISP40xxL1 series will be suitable.

Internal ISDN lines are not exposed to high stress levels and the chances of a.c. power intrusion are low (ETSI EN 300 386-2 1997).

Accordingly, the equipment port protection needs are at a lower level than ports connected to outside lines.

Home Phone Networking

Using the existing house telephone wiring, home phone networking systems place the local network traffic in a high band above the POTS and

ADSL (Asymmetrical Digital Subscriber Line) spectrum. Local network rates are 1 Mbps or more. To reject noise and harmonics, an in-line

protection and 5 MHz to 10 MHz bandpass filter module is used for the equipment. These modules are available from magnetic component

manufacturers (e.g. Bel Fuse Inc.) A typical circuit for the telephone line magnetics module is shown in Figure 13. Transformer T1 isolates the

equipment from the house wiring. The isolated winding output is voltage limited by a very low-voltage protector, Th1. With a differential voltage

of about 12 V peak to peak, the TISP4015L1 could be used for Th1. After filtering, connection is made to the differential transceiver of the

processing IC.

TIP

T1

FILTER

HRTRX+

C1

Th1

HRTRX-

PROTECTION

AI4XAP

RING

Figure 13. Home Phone Networking Isolation/filter/protection Circuit

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

MECHANICAL DATA

Recommended Printed Wiring Land Pattern Dimensions

2.34

(.092)

SMA Land Pattern

1.90

(.075)

2.16

(.085)

MILLIMETERS

(INCHES)

DIMENSIONS ARE:

MDXXBIC

2.54

(.100)

SMB Land Pattern

2.40

(.095)

2.16

(.085)

MILLIMETERS

(INCHES)

DIMENSIONS ARE:

MDXXBIB

Device Symbolization Code

Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.

Symbolization

Code

Symbolization

Device

Code

TISP4015L1AJ

TISP4030L1AJ

TISP4040L1AJ

4015L

TISP4015L1BJ

TISP4030L1BJ

TISP4040L1BJ

4015L1

4030L1

4040L1

4030L

4040L

Carrier Information

For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.

Package

SMA

Carrier

Standard Quantity

5000

3000

Embossed Tape Reel Pack

SMB

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

MECHANICAL DATA

SMA (DO-214AC) Plastic Surface Mount Diode Package

This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will

withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high

humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.

SMA

4.06 - 4.57

(.160 - .180)

2.29 - 2.92

(.090 - .115)

2

Index

Mark

(if needed)

2.00 - 2.40

(.079 - .095)

1.27 - 1.63

0.10 - 0.20

(.050 - .064)

(.004 - .008)

0.76 - 1.52

(.030 - .060)

1.58 - 2.16

(.062 - .085)

4.83 - 5.59

(.190 - .220)

MILLIMETERS

(INCHES)

DIMENSIONS ARE:

MDXXCAA

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

MECHANICAL DATA

Tape Dimensions

SMA Package Single-Sprocket Tape

3.90 - 4.10

(.154 - .161)

1.55 - 1.65

(.061 - .065)

1.95 - 2.05

(.077 - .081)

0.40

(.016)

1.65 - 1.85

(.065 - .073)

MAX.

5.45 - 5.55

(.215 - .219)

11.70 - 12.30

(.461 - .484)

8.20

(.323)

MAX.

3.90 - 4.10

(.154 - .161)

1.5

(.059)

Cover

Tape

MIN.

0 MIN.

4.50

(.177)

MAX.

Carrier Tape

Embossment

Direction of Feed

20°

Maximum component

rotation

Typical component

cavity center line

Index

Mark

(If needed)

Typical component

center line

MILLIMETERS

(INCHES)

DIMENSIONS ARE:

NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in)

MDXXCGA

MAX. so that the component cannot rotate more than 20° within the determined cavity.

B. Taped devices are supplied on a reel of the following dimensions:

Reel diameter:

330 mm ± 3.0 mm (12.99 in ± .12 in)

Reel hub diameter: 75 mm (2.95 in) MIN.

Reel axial hole:

13.0 mm ± 0.5 mm (.51 in ± .02 in)

C. 5000 devices per reel.

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

MECHANICAL DATA

SMB (DO-214AA) Plastic Surface Mount Diode Package

This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will

withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high

humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.

SMB

4.06 - 4.57

(.160 - .180)

3.30 - 3.94

(.130 - .155)

1

2

Index

Mark

(if needed)

2.00 - 2.40

(.079 - .094)

0.10 - 0.20

(.004 - .008)

1.90 - 2.10

(.075 - .083)

1.96 - 2.32

(.077 - .091)

0.76 - 1.52

(.030 - .060)

5.21 - 5.59

(.205 - .220)

MILLIMETERS

(INCHES)

DIMENSIONS ARE:

MDXXBHAB

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP40xxL1AJ/BJ VLV Overvoltage Protectors

MECHANICAL DATA

Tape Dimensions

SMB Package Single-Sprocket Tape

1.55 -

(.061 - .065 )

3.90 - 4.10

(.154 - .161 )

1.65

1.95 - 2.05

(.077 - .081)

0.40

(.016)

1.65 -

1.85

(.065 - .073 )

MAX .

5.45 -

(.215 - .219 )

5.55

11.70 -

(.461 - .484 )

12.30

8.20

MAX .

(.323)

7.90 - 8

.10

(.311 - .319 )

Cover

Ta pe

1.5

(.059)

MIN.

0 MIN.

4.5

(.177)

Carrier Tape

Embossment

MAX .

Direction of Feed

Maximium component

rotation

20°

Ty pical component

cavity center line

Index

Mark

(if needed)

Typical component

center line

NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in)

MDXXBJA

MAX. so that the component cannot rotate more than 20° within the determined cavity.

B. Taped devices are supplied on a reel of the following dimensions:

Reel diameter:

330 mm ± 3.0 mm (12.99 in ± .118 in)

Reel hub diameter: 75 mm (2.95 in) MIN.

Reel axial hole:

13.0 mm ± 0.5 mm (.512 in ± .020 in)

C. 3000 devices are on a reel.

“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.

“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.

AUGUST 1999 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

型号:	TISP4015L1AJR-S
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	BOURNS INC
零件包装代码：	DO-214AC
包装说明：	SMALL OUTLINE, R-PDSO-C2
针数：	2
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.30.00.80
Factory Lead Time：	7 weeks
风险等级：	1.18
Samacsys Confidence：	4
Samacsys Status：	Released
Samacsys PartID：	350996
Samacsys Pin Count：	2
Samacsys Part Category：	Thyristor
Samacsys Package Category：	Other
Samacsys Footprint Name：	TISP4015L1AJR-S-1
Samacsys Released Date：	2019-06-18 22:13:59
Is Samacsys：	N
其他特性：	UL RECOGNIZED
最大转折电压：	15 V
配置：	SINGLE
最大断态直流电压：	8 V
JEDEC-95代码：	DO-214AC
JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3
湿度敏感等级：	1
通态非重复峰值电流：	22 A
元件数量：	1
端子数量：	2
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	C BEND
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
触发设备类型：	SILICON SURGE PROTECTOR
Base Number Matches：	1

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