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产品型号TK18A30D的Datasheet PDF文件预览

TK18A30D  
MOSFETs Silicon N-Channel MOS (π-MOS)  
TK18A30D  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 0.1 (typ.)  
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V)  
(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)  
3. Packaging and Internal Circuit  
1: Gate (G)  
2: Drain (D)  
3: Source (S)  
TO-220SIS  
2011-04-22  
Rev.1.0  
1
TK18A30D  
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
VDSS  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
300  
VGSS  
±20  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
(Note 1)  
(Note 1)  
ID  
IDP  
PD  
18  
72  
A
(Tc = 25)  
45  
W
mJ  
A
Single-pulse avalanche energy  
Avalanche current  
(Note 2)  
(Note 3)  
(Note 1)  
(Note 1)  
EAS  
IAR  
IDR  
IDRP  
Tch  
126  
18  
Reverse drain current (DC)  
Reverse drain current (pulsed)  
Channel temperature  
18  
72  
150  
Storage temperature  
Tstg  
-55 to 150  
Isolation voltage (RMS)  
Mounting torque  
(t = 1.0 s)  
VISO(RMS)  
2000  
0.6  
V
TOR  
Nm  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
5. Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
Channel-to-case thermal resistance  
Channel-to-ambient thermal resistance  
Rth(ch-c)  
Rth(ch-a)  
2.78  
62.5  
/W  
Note 1: Ensure that the channel temperature does not exceed 150.  
Note 2: VDD = 50 V, Tch = 25(initial), L = 0.67 mH, RG = 25 , IAR = 18 A  
Note 3: Repetitive rating; pulse width limited by maximum channel temperature  
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.  
2011-04-22  
Rev.1.0  
2
TK18A30D  
6. Electrical Characteristics  
6.1. Static Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
IGSS  
IDSS  
VGS = ±20 V, VDS = 0 V  
±1  
10  
µA  
Drain cut-off current  
VDS = 300 V, VGS = 0 V  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS ID = 10 mA, VGS = 0 V  
300  
1.5  
V
Vth  
VDS = 10 V, ID = 1 mA  
VGS = 10 V, ID = 9 A  
3.5  
Drain-source on-resistance  
RDS(ON)  
0.1  
0.139  
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Input capacitance  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
pF  
Ciss  
Crss  
Coss  
rg  
VDS = 100 V, VGS = 0 V, f = 1 MHz  
2600  
17  
Reverse transfer capacitance  
Output capacitance  
140  
6.3  
70  
Gate resistance  
VDS = OPEN, f = 1 MHz  
See Figure 6.2.1.  
Switching time (rise time)  
Switching time (turn-on time)  
Switching time (fall time)  
Switching time (turn-off time)  
tr  
ns  
ton  
tf  
115  
55  
toff  
345  
Fig. 6.2.1 Switching Time Test Circuit  
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Qg  
Test Condition  
Min  
Typ.  
60  
Max  
Unit  
nC  
Total gate charge (gate-source plus  
gate-drain)  
VDD 240 V, VGS = 10 V, ID = 18 A  
Gate-source charge 1  
Gate-drain charge  
Qgs1  
Qgd  
10  
20  
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Diode forward voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
VDSF  
trr  
IDR = 18 A, VGS = 0 V  
-1.7  
V
Reverse recovery time  
IDR = 18 A, VGS = 0 V  
250  
ns  
-dIDR/dt = 100 A/µs  
Reverse recovery charge  
Qrr  
Irr  
2.1  
µC  
Peak reverse recovery current  
16.5  
A
2011-04-22  
Rev.1.0  
3
TK18A30D  
7. Marking (Note)  
Fig. 7.1 Marking  
Note: A line under a Lot No. identifies the indication of product Labels.  
Not underlined: [[Pb]]/INCLUDES > MCV  
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS  
compatibility of Product.  
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on  
the restriction of the use of certain hazardous substances in electrical and electronic equipment.  
2011-04-22  
Rev.1.0  
4
TK18A30D  
8. Characteristics Curves (Note)  
Fig. 8.1 ID - VDS  
Fig. 8.3 ID - VGS  
Fig. 8.5 |Yfs| - ID  
Fig. 8.2 ID - VDS  
Fig. 8.4 VDS - VGS  
Fig. 8.6 RDS(ON) - ID  
2011-04-22  
Rev.1.0  
5
TK18A30D  
Fig. 8.7 RDS(ON) - Ta  
Fig. 8.8 IDR - VDS  
Fig. 8.9 C - VDS  
Fig. 8.10 Vth - Ta  
Fig. 8.11 PD - Tc  
Fig. 8.12 Dynamic Input/Output Characteristics  
(Guaranteed Maximum)  
2011-04-22  
Rev.1.0  
6
TK18A30D  
Fig. 8.13 rth/Rth(ch-c) - tw  
(Guaranteed Maximum)  
Fig. 8.14 Safe Operating Area  
(Guaranteed Maximum)  
Fig. 8.15 EAS - Tch  
(Guaranteed Maximum)  
Fig. 8.16 Test Circuit/Waveform  
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,  
unless otherwise noted.  
2011-04-22  
Rev.1.0  
7
TK18A30D  
Package Dimensions  
Unit: mm  
Weight: 1.7 g (typ.)  
Package Name(s)  
JEITA: SC-67  
TOSHIBA: 2-10U1S  
Nickname: TO-220SIS  
2011-04-22  
Rev.1.0  
8
TK18A30D  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively "Product") without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's  
written permission, reproduction is permissible only if reproduction is without alteration/omission.  
ThoughTOSHIBAworkscontinuallytoimproveProduct'squalityandreliability,Productcanmalfunctionorfail.Customersareresponsible  
for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which  
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage  
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate  
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA  
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the  
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application  
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,  
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating  
and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample  
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.  
TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product  
is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/  
or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact  
("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace  
industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment,  
equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and  
equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any  
intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER,  
INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING  
WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND  
(2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT,  
OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR  
PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,  
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products  
(mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange  
and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology  
are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
2011-04-22  
Rev.1.0  
9
配单直通车
TK18A50D产品参数
型号:TK18A50D
是否Rohs认证:符合
生命周期:Active
IHS 制造商:TOSHIBA CORP
零件包装代码:SC-67
包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3
Reach Compliance Code:unknown
风险等级:5.73
Is Samacsys:N
雪崩能效等级(Eas):533 mJ
外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):18 A
最大漏极电流 (ID):18 A
最大漏源导通电阻:0.27 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3
元件数量:1
端子数量:3
工作模式:ENHANCEMENT MODE
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):72 A
认证状态:Not Qualified
子类别:FET General Purpose Power
表面贴装:NO
端子形式:THROUGH-HOLE
端子位置:SINGLE
晶体管应用:SWITCHING
晶体管元件材料:SILICON
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