TLP250L现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

TLP250

TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC

TLP250

Transistor Inverter

Inverter For Air Conditioner

IGBT Gate Drive

Unit in mm

Power MOS FET Gate Drive

The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a

integrated photodetector.

This unit is 8−lead DIP package.

TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.

•

Input threshold current: I =5mA(max.)

F

Supply current (I ): 11mA(max.)

CC

Supply voltage (V ): 10−35V

CC

Output current (I ): ±1.5A (max.)

O

Switching time (t

/t

): 0.5μs(max.)

pLH pHL

Isolation voltage: 2500V

(min.)

rms

UL recognized: UL1577, file No.E67349

Option(D4)

VDE Approved : DIN EN60747-5-2

Maximum Operating Insulation Voltage : 890V_PK

TOSHIBA

11−10C4

Weight: 0.54 g(Typ.)

Highest Permissible Over Voltage

: 4000V_PK

Pin Configuration (top view)

(Note):When a EN60747-5-2 approved type is needed,

Please designate “Option(D4)”

1

2

8

7

3

4

6

5

Truth Table

Tr1

Tr2

On

Off

On

Off

On

Input

LED

1 : N.C.

5 : GND

6 : V (Output)

2 : Anode

3 : Cathode

4 : N.C.

O

7 : V

8 : V

O

CC

I

CC

Schmatic

V

CC

8

(T 1)

r

I

F

2+

V

O

7

6

V

F

3-

V

O

I

O

(T 2)

r

GND

5

A 0.1μF bypass capcitor must be

connected between pin 8 and 5 (See Note 5).

2007-10-01

1

TLP250

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

mA

Forward current

I

20

−0.36

1

F

Forward current derating (Ta ≥ 70°C)

Peak transient forward curent

Reverse voltage

ΔI / ΔTa

F

mA / °C

(Note 1)

I

A

V

FPT

V

5

R

Junction temperature

Tj

125

°C

A

“H”peak output current (P ≤ 2.5μs,f ≤ 15kHz)

(Note 2)

I

−1.5

+1.5

35

W

OPH

“L”peak output current (P ≤ 2.5μs,f ≤ 15kHz)

I

A

W

OPL

(Ta ≤ 70°C)

Output voltage

Supply voltage

V

O

(Ta = 85°C)

(Ta ≤ 70°C)

(Ta = 85°C)

24

35

V

CC

24

Output voltage derating (Ta ≥ 70°C)

Supply voltage derating (Ta ≥ 70°C)

Junction temperature

ΔV / ΔTa

−0.73

125

V / °C

°C

O

ΔV

/ ΔTa

CC

Tj

Operating frequency

(Note 3)

f

25

kHz

°C

Operating temperature range

T

−20~85

−55~125

260

opr

Storage temperature range

T

°C

stg

Lead soldering temperature (10 s)

Isolation voltage (AC, 1 min., R.H.≤ 60%)

°C

sol

(Note 4)

BV

2500

Vrms

S

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1:

Note 2:

Note 3:

Note 4:

Pulse width P ≤ 1μs, 300pps

W

Exporenential wavefom

Exporenential wavefom, I

≤ −1.0A( ≤ 2.5μs), I

≤ +1.0A( ≤ 2.5μs)

OPL

OPH

Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted

together.

Note 5:

A ceramic capacitor(0.1μF) should be connected from pin 8 to pin 5 to stabilize the operation of the high

gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead

length between capacitor and coupler should not exceed 1cm.

Recommended Operating Conditions

Characteristic

Input current, on

Symbol

Min

Typ.

Max

Unit

(Note6)

I

7

0

10

mA

V

8

F(ON)

Input voltage, off

Supply voltage

V

0.8

―

25

F(OFF)

V

15

―

30

70

20

85

V

CC

Peak output current

I

/I

±0.5

A

OPH OPL

Operating temperature

T

opr

−20

°C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

Note 6: Input signal rise time(fall time)<0.5μs.

2007-10-01

2

TLP250

Electrical Characteristics (Ta = −20~70°C, unless otherwise specified)

Test

Cir−

Characteristic

Input forward voltage

Symbol

Test Condition

= 10 mA , Ta = 25°C

= 10 mA

Min

―

Typ.*

1.6

Max

Unit

V

cuit

V

―

I

1.8

F

Temperature coefficient of

forward voltage

ΔV / ΔTa

―

−2.0

―

mV / °C

F

Input reverse current

Input capacitance

I

―

V

= 5V, Ta = 25°C

R

―

10

μA

R

C

V = 0 , f = 1MHz , Ta = 25°C

45

250

pF

T

I

V

= 10 mA

8−6

F

“H” level

I

1

2

3

4

−0.5

0.5

11

−1.5

2

―

OPH

= 4V

V

= 30V

CC

(*1)

Output current

Output voltage

A

V

I

V

= 0

6−5

F

“L” level

“H” level

“L” level

I

OPL

= 2.5V

V

= +15V, V

R = 200Ω, I = 5mA

= −15V

EE1

CC1

V

12.8

−14.2

―

OH

L

F

V

= +15V, V

R = 200Ω, V = 0.8V

= −15V

EE1

CC1

V

―

−12.5

OL

L

F

V

= 30V, I = 10mA

F

CC

―

⎯

―

7

―

11

⎯

11

5

Ta = 25°C

“H” level

“L” level

I

―

CCH

V

= 30V, I = 10mA

―

CC

F

Supply current

mA

V

= 30V, I = 0mA

CC

F

7.5

―

Ta = 25°C

I

―

CCL

V

= 30V, I = 0mA

F

CC

Threshold input

current

= +15V, V

= −15V

EE1

“Output

CC1

I

FLH

1.2

L→H”

R = 200Ω, V > 0V

L

O

Threshold input

voltage

V

= +15V, V

= −15V

EE1

“Output

CC1

V_FHL

―

0.8

10

―

35

V

H→L”

R = 200Ω, V < 0V

L

O

V

Supply voltage

CC

Capacitance

V

= 0 , f = 1MHz

S

C

S

1.0

2.0

pF

(input−output)

Ta = 25℃

12

14

V

= 500V , Ta = 25°C

S

Resistance(input−output)

R

―

1×10

10

―

Ω

S

R.H.≤ 60%

* All typical values are at Ta = 25°C

(*1): Duration of I time ≤ 50μs

O

2007-10-01

3

TLP250

Switching Characteristics (Ta = −20~70°C , unless otherwise specified)

Test

Cir−

cuit

Characteristic

Symbol

Test Condition

Min

Typ.*

Max

Unit

L→H

H→L

t

―

0.15

―

0.5

―

pLH

Propagation

delay time

I

= 8mA

F

pHL

5

6

V

= +15V, V

= −15V

EE1

μs

CC1

R = 200Ω

Output rise time

Output fall time

t

r

L

t

f

―

Common mode transient

immunity at high level

output

V

= 600V, I = 8mA

F

= 30V, Ta = 25°C

CM

CC

C

−5000

―

V / μs

MH

Common mode transient

immunity at low level

output

V

= 600V, I = 0mA

F

= 30V, Ta = 25°C

CM

CC

C

5000

ML

All typical values are at Ta = 25°C

Test Circuit 1 : I

Test Circuit 2 : I

1

OPH

OPL

8

1

V

CC

0.1μF

V

I

8-6

F

V

CC

A

I

OPL

I

OPH

4

V

4

6-5

Test Circuit 3 : V

Test Circuit 4 : V

OL

OH

8

1

V

CC1

V

CC1

0.1μF

I

V

F

R

L

R

L

V

OH

OL

4

V

EE1

V

EE1

2007-10-01

4

TLP250

Test Circuit 5: t

, t

, t t

pLH pHL r f

8

I

F

t

r

t

f

I

F

0.1μF

V

CC1

V

80%

OH

V

O

R

L

V

GND

O

V

OL

t HL

p

t LH

p

100Ω

V

EE1

Test Circuit 6: C , C

MH ML

8

1

I

0.1μF

F

SW

V

CC

A

B

V

O

4

V

CM

+

-

600V

90%

V

CM

10%

t

f

r

480 (V)

t_{r (μs)}

C_{ML =}

SW :A(I =8mA)

F

480 (V)

t_{f (μs)}

C

MH

C_{MH =}

26V

V

O

3V

C

HL

SW :B(I =0)

F

C (C ) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output

ML MH

voltage in the low (high) state.

2007-10-01

5

TLP250

I

– V

ΔV / ΔTa – I

F F

F

100

-2.6

-2.4

-2.2

-2.0

-1.8

Ta = 25 °C

50

30

10

5

3

1

0.5

0.3

0.1

0.05

0.03

-1.6

-1.4

0.01

1.0

1.4

1.8

2.0

100

1

1.2

1.6

0.1

0.3

3

5

30

10

0.5

Forward voltage

V

(V)

Forward current

I

(mA)

F

I

F

– Ta

V

– Ta

CC

40

30

20

40

30

20

10

0

10

0

20

60

0

40

0

100

80

40

80

Ambient temperature Ta (°C)

I

– Ta

OPH, OPL

PW ≦2.5 μs, f ≦15 KHz

2

1

0

20

60

0

40

80

Ambient Temperature Ta (°C)

2007-10-01

6

TLP250

RESTRICTIONS ON PRODUCT USE

20070701-EN

• The information contained herein is subject to change without notice.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his

document shall be made at the customer’s own risk.

• The products described in this document shall not be used or embedded to any downstream products of which

manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patents or other rights of

TOSHIBA or the third parties.

• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,

cut, crush or dissolve chemically.

• Please contact your sales representative for product-by-product details in this document regarding RoHS

compatibility. Please use these products in this document in compliance with all applicable laws and regulations

that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses

occurring as a result of noncompliance with applicable laws and regulations.

2007-10-01

7

型号:	TLP251
是否Rohs认证：	不符合
生命周期：	Not Recommended
IHS 制造商：	TOSHIBA CORP
包装说明：	DIP-8
Reach Compliance Code：	unknown
HTS代码：	8541.40.80.00
风险等级：	5.4
Is Samacsys：	N
其他特性：	MOS COMPATIBLE, UL RECOGNIZED
配置：	COMPLEX
标称数据速率：	0.025 MBps
最大正向电流：	0.02 A
最大绝缘电压：	2500 V
元件数量：	1
最大通态电流：	0.4 A
最高工作温度：	85 °C
最低工作温度：	-20 °C
光电设备类型：	LOGIC IC OUTPUT OPTOCOUPLER
最小供电电压：	10 V
Base Number Matches：	1

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