TLZ3V6B现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

TLZ...

Vishay Semiconductors

Z–Diodes

Features

D Very sharp reverse characteristic

D Low reverse current level

D Available with tighter tolerances

D Very high stability

D Low noise

D Silicon Epitaxial Planar

D High reliability

Applications

Voltage stabilization

Order Instruction

Type

Ordering Code

TLZ2V4–GS08

TLZ2V4–GS18

Remarks

Tape and Reel (2.500 pcs)

Tape and Reel (10.000 pcs)

TLZ2V4

Absolute Maximum Ratings

T = 25_C

j

Parameter

Test Conditions

Type

Symbol

Value

500

Unit

mW

mA

°C

Power dissipation

Z–current

R

x300K/W

thJA

P

V

I

P /V

V

Z

Junction temperature

Storage temperature range

T

175

j

T

stg

–65...+175

°C

Maximum Thermal Resistance

T = 25_C

j

Parameter

Test Conditions

on PC board 50 mmx50 mmx1.6 mm

Symbol

Value

500

Unit

K/W

Junction ambient

R

thJA

Electrical Characteristics

T = 25_C

j

Parameter

Test Conditions

I =200mA

Type

Symbol Min Typ Max Unit

1.5

Forward voltage

V

F

Document Number 85635

Rev. A4, 08-JAug-02

www.vishay.com

1 (9)

TLZ...

Vishay Semiconductors

2)

Type

V

at I

Z

at I

Z

at I

I

at

I

Rmax

at

Body

Mark-

ing

Zmin

Zmax.

Z

Zmax

Z

ZKmax.

Z

Rmax.

2)

V

R

(V)

(mA)

20

(W)

100

80

70

60

50

40

25

20

13

(mA)

20

(W)

(mA)

1

(mA)

120

100

50

20

10

5

(V)

1.0

1.5

2.5

(mA)

70

20

6

(V)

0.8

1.0

TLZ2V4

2.330 2.630

2000

1000

900

2V4

2A4

2B4

2V7

2A7

2B7

3V0

3A0

3B0

3V3

3A3

3B3

3V6

3A6

3B6

3V9

3A9

3B9

4V3

4A3

4B3

4C3

4V7

4A7

4B7

4C7

5V1

5A1

5B1

5C1

5V6

5A6

5B6

5C6

TLZ2V4A 2.330 2.520

TLZ2V4B 2.430 2.630

TLZ2V7

2.540 2.910

TLZ2V7A 2.540 2.750

TLZ2V7B 2.690 2.910

TLZ3V0

2.850 3.220

TLZ3V0A 2.850 3.070

TLZ3V0B 3.010 3.220

TLZ3V3

3.160 3.530

TLZ3V3A 3.160 3.380

TLZ3V3B 3.320 3.530

TLZ3V6

3.455 3.845

TLZ3V6A 3.455 3.695

TLZ3V6B 3.600 3.845

6

TLZ3V9

3.74

4.16

4.01

4.16

4.57

4.29

4.43

4.57

4.93

4.68

4.80

4.93

5.37

5.07

5.20

5.37

5.91

5.55

5.73

5.91

3

TLZ3V9A 3.74

TLZ3V9B 3.89

5

3

5

3

TLZ4V3

4.04

5

3

TLZ4V3A 4.04

TLZ4V3B 4.17

TLZ4V3C 4.30

5

3

5

3

5

3

TLZ4V7

4.44

5

1.5

0.5

0.1

TLZ4V7A 4.44

TLZ4V7B 4.55

TLZ4V7C 4.68

900

5

900

5

900

5

TLZ5V1

4.81

800

5

TLZ5V1A 4.81

TLZ5V1B 4.94

TLZ5V1C 5.09

800

5

800

5

800

5

TLZ5V6

5.28

500

5

TLZ5V6A 5.28

TLZ5V6B 5.45

TLZ5V6C 5.61

500

5

500

5

500

5

www.vishay.com

2 (9)

Document Number 85635

Rev. A4, 08-Aug-02

TLZ...

Vishay Semiconductors

2)

Type

V

at I

Z

at I

Z

at I

I

at

I

at

Body

Mark-

ing

Zmin

.

Zmax.

Z

Zmax

.

Z

ZKmax.

Z

Rmax.

Rmax

2)

V

R

(V)

(mA)

20

10

(W)

10

8

(mA)

20

10

(W)

300

150

120

110

(mA)

1

(mA)

5

(V)

3.0

3.5

4.0

5.0

6.0

7.0

8.0

9.0

10

(mA)

0.1

–

(V)

TLZ6V2

5.78

6.44

6.09

6.27

6.44

7.01

6.63

6.83

7.01

7.67

7.22

7.45

7.67

8.45

7.92

8.19

8.45

9.30

8.73

9.01

9.30

1.0

2.0

3.0

4.0

–

6V2

6A2

6B2

6C2

6V8

6A8

6B8

6C8

7V5

7A5

7B5

7C5

8V2

8A2

8B2

8C2

9V1

9A1

9B1

9C1

10

TLZ6V2A 5.78

TLZ6V2B 5.96

TLZ6V2C 6.12

1

5

1

5

1

5

TLZ6V8

6.29

0.5

2

TLZ6V8A 6.29

TLZ6V8B 6.49

TLZ6V8C 6.66

8

2

8

2

8

2

TLZ7V5

6.85

8

0.5

0.2

TLZ7V5A 6.85

TLZ7V5B 7.07

TLZ7V5C 7.29

8

TLZ8V2

7.53

8

TLZ8V2A 7.53

TLZ8V2B 7.78

TLZ8V2C 8.03

8

TLZ9V1

8.29

8

TLZ9V1A 8.29

TLZ9V1B 8.57

TLZ9V1C 8.83

8

–

8

–

8

–

TLZ10

9.12 10.44

8

–

TLZ10A

TLZ10B

TLZ10C

TLZ10D

TLZ11

9.12

9.41

9.59

9.90

8

–

10A

10B

10C

10D

11

8

–

9.70 10.20

9.94 10.44

10.18 11.38

10.18 10.71

10.50 11.05

10.82 11.38

11.13 12.35

11.13 11.71

11.44 12.03

11.74 12.35

12.11 13.66

12.11 12.75

12.55 13.21

12.99 13.66

8

–

8

–

10

12

14

–

TLZ11A

TLZ11B

TLZ11C

TLZ12

–

11A

11B

11C

12

–

TLZ12A

TLZ12B

TLZ12C

TLZ13

–

12A

12B

12C

13

–

TLZ13A

TLZ13B

TLZ13C

10

–

13A

13B

13C

10

–

10

–

Document Number 85635

Rev. A4, 08-JAug-02

www.vishay.com

3 (9)

TLZ...

Vishay Semiconductors

2)

Type

V

at I

Z

at I

Z

at I

I

at

I

Rmax

at

Body

Mark-

ing

Zmin

.

Zmax.

Z

Zmax

.

Z

ZKmax.

Z

Rmax.

2)

V

R

(V)

(mA)

10

5

(W)

16

18

23

28

30

35

45

55

(mA)

10

5

(W)

110

150

200

250

(mA)

0.5

(mA)

0.2

(V)

11

12

13

15

17

19

21

23

(mA)

–

(V)

TLZ15

13.44 15.09

13.44 14.13

13.89 14.62

14.35 15.09

14.80 16.51

14.80 15.57

15.25 16.04

15.69 16.51

16.22 18.33

16.22 17.06

16.82 17.70

17.42 18.33

18.02 20.72

18.02 18.96

18.63 19.59

19.23 20.22

19.72 20.72

20.15 22.63

20.15 21.20

20.64 21.71

21.08 22.17

21.52 22.63

22.05 24.85

22.05 23.18

22.61 23.77

23.12 24.31

23.63 24.85

24.26 27.64

24.26 25.52

24.97 26.26

25.63 26.95

26.29 27.64

26.99 30.51

26.99 28.39

27.70 29.13

28.36 29.82

29.02 30.51

–

15

TLZ15A

TLZ15B

TLZ15C

TLZ16

15A

15B

15C

16

TLZ16A

TLZ16B

TLZ16C

TLZ18

16A

16B

16C

18

TLZ18A

TLZ18B

TLZ18C

TLZ20

18A

18B

18C

20

TLZ20A

TLZ20B

TLZ20C

TLZ20D

TLZ22

20A

20B

20C

20D

22

TLZ22A

TLZ22B

TLZ22C

TLZ22D

TLZ24

5

22A

22B

22C

22D

24

5

TLZ24A

TLZ24B

TLZ24C

TLZ24D

TLZ27

5

24A

24B

24C

24D

27

5

TLZ27A

TLZ27B

TLZ27C

TLZ27D

TLZ30

5

27A

27B

27C

27D

30

5

TLZ30A

TLZ30B

TLZ30C

TLZ30D

5

30A

30B

30C

30D

5

www.vishay.com

4 (9)

Document Number 85635

Rev. A4, 08-Aug-02

TLZ...

Vishay Semiconductors

2)

Type

V

at I

Z

at I

Z

at I

I

at

I

at

Body

Mark-

ing

Zmin

.

Zmax.

Z

Zmax

.

Z

ZKmax.

Z

Rmax.

Rmax

2)

V

R

(V)

(mA)

5

(W)

65

75

85

90

100

(mA)

5

(W)

250

–

(mA)

0.5

–

(mA)

0.2

(V)

25

27

30

33

36

39

43

(mA)

–

(V)

TLZ33

29.68 33.11

29.68 31.22

30.32 31.88

30.90 32.50

31.49 33.11

32.14 35.77

32.14 33.79

32.79 34.49

33.40 35.13

34.01 35.77

34.68 40.80

34.68 36.47

35.36 37.19

36.00 37.85

36.63 38.52

37.36 39.29

38.14 40.11

–

33

33A

33B

33C

33D

36

TLZ33A

TLZ33B

TLZ33C

TLZ33D

TLZ36

5

–

5

–

5

–

5

–

5

–

TLZ36A

TLZ36B

TLZ36C

TLZ36D

TLZ39

5

–

36A

36B

36C

36D

39

5

–

5

–

5

–

5

–

TLZ39A

TLZ39B

TLZ39C

TLZ39D

TLZ39E

TLZ39F

5

–

39A

39B

39C

39D

39E

39F

39G

43

5

–

5

–

5

–

5

–

5

–

TLZ39G 38.94 40.80

5

–

TLZ43

TLZ47

TLZ51

TLZ56

40.00 45.00

44.00 49.00

48.00 54.00

53.00 60.00

5

–

5

–

47

5

–

51

5

–

56

2) Additional measurement

Please note: Additional measurement of voltage group 9V1 to 75 I at 95 % V

= < 35 nA at T 25 _C

R

Zmin

j

Document Number 85635

Rev. A4, 08-JAug-02

www.vishay.com

5 (9)

TLZ...

Vishay Semiconductors

Characteristics (T_j= 25_C unless otherwise specified)

600

15

500

10

400

300

200

5

I =5mA

Z

0

100

0

–5

200

50

0

40

80

120

160

0

10

20

30

40

T

amb

– Ambient Temperature ( °C )

V – Z-Voltage ( V )

Z

95 9602

95 9600

Figure 1. Total Power Dissipation vs.

Ambient Temperature

Figure 4. Temperature Coefficient of Vz vs. Z–Voltage

1000

100

10

200

T =25°C

j

150

V =2V

R

T =25°C

j

100

I =5mA

Z

50

0

1

25

0

5

10

15

20

0

5

10

15

20

V – Z-Voltage ( V )

Z

95 9598

V – Z-Voltage ( V )

Z

95 9601

Figure 2. Typical Change of Working Voltage under

Figure 5. Diode Capacitance vs. Z–Voltage

Operating Conditions at T =25°C

amb

100

10

1.3

1.2

1.1

V

Ztn

=V /V (25°C)

Zt Z

–4

TK =10 10 /K

VZ

–4

8 10 /K

T =25°C

j

–4

6 10 /K

1

–4

4 10 /K

–4

2 10 /K

0

0.1

0.01

1.0

0.9

0.8

–4

–2 10 /K

–4

–4 10 /K

0.001

1.0

240

0

0.2

0.4

0.6

0.8

–60

0

60

120

180

V – Forward Voltage ( V )

F

T – Junction Temperature ( °C )

j

95 9605

95 9599

Figure 3. Typical Change of Working Voltage vs.

Junction Temperature

Figure 6. Forward Current vs. Forward Voltage

www.vishay.com

6 (9)

Document Number 85635

Rev. A4, 08-Aug-02

TLZ...

Vishay Semiconductors

100

80

1000

100

10

I =1mA

Z

P

T

=500mW

tot

=25°C

amb

60

5mA

40

20

0

10mA

T =25°C

j

1

20

25

0

4

8

12

16

0

5

10

15

20

V – Z-Voltage ( V )

Z

V – Z-Voltage ( V )

Z

95 9604

95 9606

Figure 7. Z–Current vs. Z–Voltage

Figure 9. Differential Z–Resistance vs. Z–Voltage

50

40

30

P

T

=500mW

tot

=25°C

amb

20

10

0

35

15

20

25

30

V – Z-Voltage ( V )

Z

95 9607

Figure 8. Z–Current vs. Z–Voltage

1000

100

10

t /T=0.5

p

t /T=0.2

p

Single Pulse

R

DT=T

=300K/W

–T

jmax amb

thJA

t /T=0.01

p

t /T=0.1

p

t /T=0.02

p

2

1/2

t /T=0.05

p

i

=(–V +(V +4r ꢀDT/Z

)

)/(2r )

zj

ZM

Z

zj

thp

1

10

–1

0

1

2

10

t – Pulse Length ( ms )

10

95 9603

p

Figure 10. Thermal Response

Document Number 85635

Rev. A4, 08-JAug-02

www.vishay.com

7 (9)

TLZ...

Vishay Semiconductors

Dimensions in mm

96 12070

Marking Voltage Group

TLZ2V4A

TLZ2V4

2A4

2V4

2A4

2V4

2A4

2V4

Remark: The Zener voltage TLZ2V4 or Zener voltage group TLZ2V4A is printet

with max 3 digits 3 times on the surface. The marking should be readable

at minimum 2 times. The third print is allowed to be incomplete due to

tolerances in Diameter of the glassbody.

www.vishay.com

8 (9)

Document Number 85635

Rev. A4, 08-Aug-02

TLZ...

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the

buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 85635

Rev. A4, 08-JAug-02

www.vishay.com

9 (9)

型号:	TLZ3V6B
是否无铅：	不含铅
生命周期：	Obsolete
IHS 制造商：	VISHAY TELEFUNKEN
零件包装代码：	DO-213AA
包装说明：	O-LELF-R2
针数：	2
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
风险等级：	5.72
Is Samacsys：	N
二极管类型：	ZENER DIODE
JEDEC-95代码：	DO-213AA
JESD-30 代码：	O-LELF-R2
端子数量：	2
封装主体材料：	GLASS
封装形状：	ROUND
封装形式：	LONG FORM
认证状态：	Not Qualified
表面贴装：	YES
端子形式：	WRAP AROUND
端子位置：	END
Base Number Matches：	1

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