TMCS1108A3UQDRQ1全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

TMCS1108-Q1

SBOSA72 – JULY 2021

TMCS1108-Q1 AEC-Q100, 3% Functional Isolation Hall-Effect Current Sensor With

±100-V Working Voltage

1 Features

3 Description

•

AEC-Q100 qualified for automotive applications

– Temperature Grade 1: –40°C to 125°C, T_A

Functional Safety-Capable

– Documentation available to aid functional safety

system design

Total error: ±1% typical, ±3% maximum, –40°C to

125°C

– Sensitivity error: ±0.9%

– Offset error: 40 mA

– Offset drift: 0.2 mA/°C

– Linearity error: 0.5%

Multiple sensitivity options:

– TMCS1108A1B/U-Q1: 50 mV/A

– TMCS1108A2B/U-Q1: 100 mV/A

– TMCS1108A3B/U-Q1: 200 mV/A

– TMCS1108A4B/U-Q1: 400 mV/A

Zero drift internal reference

Bidirectional and unidirectional current sensing

Operating supply range: 3 V to 5.5 V

Signal bandwidth: 80 kHz

The TMCS1108-Q1 is a galvanically isolated Hall-

effect current sensor capable of DC or AC current

measurement with high accuracy, excellent linearity,

and temperature stability. A low-drift, temperature-

compensated signal chain provides <3% full-scale

error across the device temperature range.

•

The input current flows through an internal 1.8-mΩ

conductor that generates a magnetic field measured

by an integrated Hall-effect sensor. This structure

eliminates external concentrators and simplifies

design. Low conductor resistance minimizes power

loss and thermal dissipation. Inherent galvanic

insulation provides a 100-V functional isolation

between the current path and circuitry. Integrated

electrical shielding enables excellent common-mode

rejection and transient immunity.

•

The output voltage is proportional to the input current

with multiple sensitivity options. Fixed sensitivity

allows the TMCS1108-Q1 to operate from a single 3-V

to 5.5-V power supply, eliminates ratiometry errors,

and improves supply noise rejection. The current

polarity is considered positive when flowing into the

positive input pin. Both unidirectional and bidirectional

sensing variants are available.

Robust 100-V galvanic isolation

2 Applications

•

Motor and load control

Inverter and H-bridge current measurements

Power factor correction

Overcurrent protection

DC and AC power monitoring

The TMCS1108-Q1 draws a maximum supply current

of 6 mA, and all sensitivity options are specified over

the operating temperature range of –40°C to +125°C.

Device Information⁽¹⁾

PART NUMBER

PACKAGE

BODY SIZE (NOM)

TMCS1108-Q1

SOIC (8)

4.90 mm × 3.90 mm

(1) For all available packages, see the package option

addendum at the end of the data sheet.

Bridge Driver

V+

TMCS1108-Q1

Loads

TMCS1108-Q1

V–

Current

Sense

Current

Sense

Control

Controller

Typical Application

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

TMCS1108-Q1

SBOSA72 – JULY 2021

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Table of Contents

1 Features............................................................................1

2 Applications.....................................................................1

3 Description.......................................................................1

4 Revision History.............................................................. 2

5 Device Comparison.........................................................3

6 Pin Configuration and Functions...................................3

7 Specifications.................................................................. 4

7.1 Absolute Maximum Ratings ....................................... 4

7.2 ESD Ratings .............................................................. 4

7.3 Recommended Operating Conditions ........................4

7.4 Thermal Information ...................................................5

7.5 Power Ratings ............................................................5

7.6 Electrical Characteristics ............................................6

7.7 Typical Characteristics................................................9

8 Parameter Measurement Information..........................12

8.1 Accuracy Parameters................................................12

8.2 Transient Response Parameters.............................. 15

8.3 Safe Operating Area................................................. 16

9 Detailed Description......................................................19

9.1 Overview...................................................................19

9.2 Functional Block Diagram.........................................19

9.3 Feature Description...................................................19

9.4 Device Functional Modes..........................................23

10 Application and Implementation................................24

10.1 Application Information........................................... 24

10.2 Typical Application.................................................. 27

11 Power Supply Recommendations..............................29

12 Layout...........................................................................30

12.1 Layout Guidelines................................................... 30

12.2 Layout Example...................................................... 31

13 Device and Documentation Support..........................32

13.1 Device Support....................................................... 32

13.2 Documentation Support.......................................... 32

13.3 Receiving Notification of Documentation Updates..32

13.4 Support Resources................................................. 32

13.5 Trademarks.............................................................32

13.6 Electrostatic Discharge Caution..............................32

13.7 Glossary..................................................................32

14 Mechanical, Packaging, and Orderable

Information.................................................................... 32

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

DATE

REVISION

NOTES

July 2021

*

Initial Release

2

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5 Device Comparison

Table 5-1. Device Comparison

ZERO CURRENT OUTPUT

VOLTAGE,

SENSITIVITY

I_INLINEAR MEASUREMENT RANGE⁽¹⁾

PRODUCT

ΔV_OUT/ ΔI_{IN+, IN–}

50 mV/A

V_OUT,0A

V_S= 5 V

±46 A⁽²⁾

±23 A⁽²⁾

±11.5 A

±5.75 A

V_S= 3.3 V

±29 A⁽²⁾

TMCS1108A1B-Q1

TMCS1108A2B-Q1

TMCS1108A3B-Q1

TMCS1108A4B-Q1

TMCS1108A1U-Q1

TMCS1108A2U-Q1

TMCS1108A3U-Q1

TMCS1108A4U-Q1

100 mV/A

200 mV/A

400 mV/A

50 mV/A

±14.5 A

0.5 × V_S

±7.25 A

--

–9 A → 86 A⁽²⁾

–4.5 A → 43A⁽²⁾

–5.6 A → 55.4A⁽²⁾

–2.8 A → 27.7 A⁽²⁾

–1.4 A → 13.85 A

--

100 mV/A

200 mV/A

400 mV/A

0.1 × V_S

–2.25 A → 21.5 A⁽²⁾

–1.12 A → 10.75 A

(1) Linear range limited by swing to supply and ground.

(2) Current levels must remain below both allowable continuous DC/RMS and transient peak current safe operating areas to not exceed

device thermal limits. See Safe Operating Area section.

6 Pin Configuration and Functions

IN+

INœ

1

2

3

4

8

7

6

5

VS

VOUT

NC

GND

Not to scale

Figure 6-1. D Package 8-Pin SOIC Top View

Table 6-1. Pin Functions

NAME

I/O

DESCRIPTION

NO.

1

IN+

Analog input

Analog

Input current positive pin

Input current negative pin

Ground

2

3

IN–

4

IN–

5

GND

No connect. Pin can tolerate a capacitive or resistive connection to GND or VS

(recommend short to GND if acceptable).

6

NC

No Connect

7

8

VOUT

VS

Analog output

Analog

Output voltage

Power supply

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

MIN

GND – 0.3

–65

MAX

6

UNIT

V

V_S

Supply voltage

NC Input

NC

(V_S) + 0.3

150

V

Analog output

VOUT

V

T_J

Junction temperature

Storage temperature

Input Voltage

°C

V

T_stg

–65

150

(2)

V_IN+,V_IN-

IN+, IN-

–120

120

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2) V_IN+and V_IN–are the voltages at the IN+ and IN– pins, relative to pin 5 (GND).

7.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

±2000

V_(ESD)

Electrostatic discharge

V

Charged-device model (CDM), per JEDEC specification JESD22-

C101⁽²⁾

±1000

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

(1)

V_IN+,V_IN–

V_S

Input voltage

–100

100

V_PK

Operating supply voltage, TMCS1108A1B/U-Q1-

A3B/U-Q1

3

5

5.5

V

V_S

Operating supply voltage, TMCS1108A4B/U-Q1

Operating free-air temperature

4.5

5.5

V

(2)

T_A

–40

125

°C

(1) V_IN+and V_IN–refer to the voltage at input current pins IN+ and IN–, relative to pin 5 (GND).

(2) Input current safe operating area is constrained by junction temperature. Recommended condition based on the TMCS1108EVM. Input

current rating is derated for elevated ambient temperatures.

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7.4 Thermal Information

TMCS1108-Q1 ⁽²⁾

THERMAL METRIC⁽¹⁾

D (SOIC)

8 PINS

36.6

UNIT

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_θJC(top)

R_θJB

50.7

9.6

Ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

–0.1

Ψ_JB

11.7

R_θJC(bot)

N/A

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2) Applies when device mounted on TMCS1108EVM. For more details, see the Safe Operating Area section.

7.5 Power Ratings

V_S= 5.5 V, T_A= 125℃, T_J= 150℃, device soldered on TMCS1108EVM.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

P_D

Maximum power dissipation (both sides)

673

mW

Maximum power dissipation (current input,

side-1)

P_D1

P_D2

I_IN= 16 A

640

33

mW

Maximum power dissipation by (side-2)

V_S= 5.5 V, I_Q= 6mA, no VOUT load

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7.6 Electrical Characteristics

at T_A= 25°C, V_S= 5 V (unless otherwise noted)

PARAMETERS

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OUTPUT

TMCS1108A1B-Q1

50

100

mV/A

TMCS1108A2B-Q1

TMCS1108A3B-Q1

200

TMCS1108A4B-Q1

400

Sensitivity⁽⁷⁾

TMCS1108A1U-Q1

50

TMCS1108A2U-Q1

100

TMCS1108A3U-Q1

200

TMCS1108A4U-Q1

400

0.05 V ≤ V_OUT≤ V_S– 0.2 V, T_A= 25ºC

±0.4%

±1.2%

Sensitivity error

TMCS1108A1U-Q1, 0.05 V ≤ V_OUT≤ 3 V,

T_A= 25ºC

±0.4%

±0.7%

Sensitivity error, including lifetime and

environmental drift ⁽⁵⁾

0.05 V ≤ V_OUT≤ V_S– 0.2 V, T_A= 25ºC

±1.8%

0.05 V ≤ V_OUT≤ V_S– 0.2 V,

T_A= –40ºC to +85ºC

TMCS1108A1U-Q1, 0.05 V ≤ V_OUT≤ 3 V,

T_A= –40ºC to +85ºC

Sensitivity error

0.05 V ≤ V_OUT≤ V_S– 0.2 V,

T_A= –40ºC to +125ºC

±0.9% ±2.25%

TMCS1108A1U-Q1, 0.05 V ≤ V_OUT≤ 3 V,

T_A= –40ºC to +125ºC

V_OUT= 0.5 V to V_S– 0.5 V

TMCS1108A1U, V_OUT= 0.5 V to 3 V

TMCS1108A1B-Q1

±0.5%

Nonlinearity error

±2

±8

±10

±12

±30

±8

mV

TMCS1108A2B-Q1

TMCS1108A3B-Q1

±3

TMCS1108A4B-Q1

±5

V_OE

Output voltage offset error⁽¹⁾

TMCS1108A1U-Q1

±2

TMCS1108A2U-Q1

±2

±10

±12

±30

TMCS1108A3U-Q1

±5

TMCS1108A4U-Q1

±15

TMCS1108A1B-Q1, TA= –40ºC to

+125ºC

±10

±15

±40

±10

±20

±50

±30 µV/℃

±40 µV/℃

±80 µV/℃

±170 µV/℃

±30 µV/℃

±40 µV/℃

±80 µV/℃

±170 µV/℃

TMCS1108A2B-Q1, TA= –40ºC to

+125ºC

TMCS1108A3B-Q1, TA= –40ºC to

+125ºC

TMCS1108A4B-Q1, TA= –40ºC to

+125ºC

Output voltage offset drift

TMCS1108A1U-Q1, TA= –40ºC to

+125ºC

TMCS1108A2U-Q1, TA= –40ºC to

+125ºC

TMCS1108A3U-Q1, TA= –40ºC to

+125ºC

TMCS1108A4U-Q1, TA= –40ºC to

+125ºC

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at T_A= 25°C, V_S= 5 V (unless otherwise noted)

PARAMETERS

TEST CONDITIONS

TMCS1108A1B-Q1

MIN

TYP

±40

MAX

±160

±100

±60

UNIT

mA

TMCS1108A2B-Q1

TMCS1108A3B-Q1

TMCS1108A4B-Q1

TMCS1108A1U-Q1

TMCS1108A2U-Q1

TMCS1108A3U-Q1

TMCS1108A4U-Q1

±20

±15

±12.5

±40

±75

I_OS

Offset error, RTI^{(1) (3)}

±160

±100

±60

±20

±25

±37.5

±75

TMCS1108A1B-Q1, TA= –40ºC to

+125ºC

±200

±100

±75

±600 µA/°C

±400 µA/°C

±425 µA/°C

±600 µA/°C

±400 µA/°C

TMCS1108A2B-Q1, TA= –40ºC to

+125ºC

TMCS1108A3B-Q1, TA= –40ºC to

+125ºC

TMCS1108A4B-Q1, TA= –40ºC to

+125ºC

±100

±200

±100

Offset error temperature drift, RTI⁽³⁾

TMCS1108A1U-Q1, TA= –40ºC to

+125ºC

TMCS1108A2U-Q1, TA= –40ºC to

+125ºC

TMCS1108A3U-Q1, TA= –40ºC to

+125ºC

TMCS1108A4U-Q1, TA= –40ºC to

+125ºC

±125

±1

±425 µA/°C

±6.5 mV/V

V_S= 3 V to 5.5 V, T_A= –40ºC to +125ºC

TMCS1108A4B/U-Q1, V_S= 4.5 V to 5.5

V,

PSRR

Power-supply rejection ratio

±1

±6.5 mV/V

T_A= –40ºC to +125ºC

CMTI

Common mode transient immunity

Common mode rejection ratio, RTI⁽³⁾

50

5

kV/µs

uA/V

CMRR

DC to 60Hz

TMCS1108AxU-Q1

TMCS1108AxB-Q1

TMCS1108A1B-Q1

TMCS1108A2B-Q1

TMCS1108A3B-Q1

TMCS1108A4B-Q1

TMCS1108A1U-Q1

TMCS1108A2U-Q1

TMCS1108A3U-Q1

TMCS1108A4U-Q1

0.1*V_S

0.5*V_S

380

V/V

(1)

Zero current V_OUT

V/V

μA/√Hz

330

300

225

Noise density, RTI⁽³⁾

380

330

300

225

INPUT

R_IN

Input conductor resistance

IN+ to IN–

1.8

4.4

mΩ

Input conductor resistance temperature

drift

T_A= –40ºC to +125ºC

μΩ/°C

G

Magnetic coupling factor

T_A= 25ºC

T_A= 85ºC

T_A= 105ºC

T_A= 125ºC

1.1

30

mT/A

A

25

I_IN,max

Allowable continuous RMS current ⁽⁴⁾

22.5

16

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at T_A= 25°C, V_S= 5 V (unless otherwise noted)

PARAMETERS

TEST CONDITIONS

MIN

TYP

MAX

UNIT

NC (Pin 6) input impedance

Over allowable range, GND < V_NC< V_S

1

MΩ

VOLTAGE OUTPUT

f = 1 Hz to 1 kHz

0.2

Ω

Z_OUT

Closed loop output impedance

f = 10 kHz

2

Maximum capacitive load

Short circuit output current

Swing to V_Spower-supply rail

No sustained oscillation

VOUT short to ground, short to V_S

R_L= 10 kΩ to GND, T_A= –40ºC to +125ºC

1

nF

mA

V

90

V_S– 0.02 V_S– 0.1

V_GND

+

Swing to GND

R_L= 10 kΩ to GND, T_A= –40ºC to +125ºC

V_GND+ 5

mV

10

FREQUENCY RESPONSE

BW

SR

Bandwidth⁽⁶⁾

–3-dB Bandwidth

80

kHz

Slew rate of output amplifier during single

transient step.

Slew rate⁽⁶⁾

1.5

V/µs

Time between the input current step

reaching 90% of final value to the sensor

output reaching 90% of its final value, for

a 1V output transition.

t_r

Response time⁽⁶⁾

6.5

4

µs

Time between the input current step

reaching 10% of final value to the sensor

output reaching 10% of its final value, for

a 1V output transition.

t_p

Propagation delay⁽⁶⁾

Time between the input current step

reaching 90% of final value to the sensor

output reaching 90% of its final value.

Input current step amplitude is twice full

scale output range.

t_r,SC

Current overload response time⁽⁶⁾

5

µs

Time between the input current step

reaching 10% of final value to the sensor

output reaching 10% of its final value.

Input current step amplitude is twice full

scale output range.

t_p,SC

Current overload propagation delay⁽⁶⁾

Current overload recovery time

3

µs

Time from end of current causing output

saturation condition to valid output

15

POWER SUPPLY

I_QQuiescent current

Power on time

T_A= 25ºC

4.5

25

5.5

6

mA

ms

T_A= –40ºC to +125ºC

Time from V_S> 3 V to valid output

(1) Excludes effect of external magnetic fields. See the Accuracy Parameters section for details to calculate error due to external magnetic

fields.

(2) Excluding magnetic coupling from layout deviation from recommended layout. See the Layout section for more information.

(3) RTI = referred-to-input. Output voltage is divided by device sensitivity to refer signal to input current. See the Parameter Measurement

Information section.

(4) Thermally limited by junction temperature. Applies when device mounted on TMCS1108EVM. For more details, see the Safe Operating

Area section.

(5) Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are

population mean+1σ from worst case stress test condition. Min/max are tested device population mean±6σ; devices tested in AEC-

Q100 qualification stayed within min/max limits for all stress conditions. See Lifetime and Environmental Stability section for more

details.

(6) Refer to the Transient Response section for details of frequency and transient response of the device.

(7) Centered parameter based on TMCS1108EVM PCB layout. See Layout section. Device must be operated below maximum junction

temperature.

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7.7 Typical Characteristics

0.9

0.6

0.3

0

200

160

120

80

A1B/U

A2B/U

A3B/U

A4B/U

A1B/U

A2B/U

A3B/U

A4B/U

40

-0.3

-0.6

-0.9

-1.2

-1.5

0

-40

-80

-120

-160

-200

-50

-25

0

25

50

75

100

125

150

-50

-25

0

25

50

75

100

125

150

Temperature (°C)

Figure 7-1. TMCS1108-Q1 Sensitivity Error vs. Temperature

Figure 7-2. TMCS1108-Q1 Input Offset Current vs. Temperature

4

3

30

0

-30

2

1

0

-60

-1

-2

-3

-90

-120

-150

-180

-4

All gains 80kHz -3dB

-5

-6

10

100

1k 10k

Frequency (Hz)

100k

1M

10

100

1k

Frequency (Hz)

10k

100k

Figure 7-3. Sensitivity vs. Frequency, All Gains Normalized to 1

Hz

Figure 7-4. Phase vs. Frequency, All Gains

100

10

1

VS

(VS) – 0.5

(VS) – 1

(VS) – 1.5

(VS) – 2

–

(VS) 2.5

(VS) – 3

GND + 3

GND + 2.5

GND + 2

GND + 1.5

GND + 1

GND + 0.5

GND

0.1

0

20

40

60

80

100

120

140

160

10

100

1k 10k

Frequency (Hz)

100k

1M

Output Current (mA)

Figure 7-5. Output Swing vs. Output Current

Figure 7-6. Output Impedance vs. Frequency

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7.7 Typical Characteristics (continued)

5.2

400

350

300

250

200

150

A1B/U

A2B/U

A3B/U

A4B/U

5

4.8

4.6

4.4

4.2

A1

A2

A3

A4

10

100

1k

Frequency (Hz)

10k

100k

-50

-25

0

25

50

75

Temperature (°C)

100

125

150

Figure 7-8. Input-Referred Noise vs. Frequency

Figure 7-7. Quiescent Current vs. Temperature

90

75

60

45

30

15

0

4

90

75

60

45

30

15

0

4

I_IN

V₁

V₂

3.5

3

3.5

3

2.5

2

2.5

2

1.5

1

1.5

1

I_IN

V₁

V₂

-15

0.5

-15

0.5

Time (4ms/div)

Figure 7-9. Voltage Output Step, Rising

Figure 7-10. Voltage Output Step, Falling

70

60

50

40

30

20

10

0

6

5

4

3

2

1

0

I_IN

V_OUT

-1

-2

-10

Time (4ms/div)

Figure 7-12. Startup Transient Response

Figure 7-11. Current Overload Response

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7.7 Typical Characteristics (continued)

2.4

2.3

2.2

2.1

2

1.9

1.8

1.7

1.6

1.5

1.4

-50

-25

0

25

50

75

Temperature (°C)

100

125

150

Figure 7-13. Input Conductor Resistance vs. Temperature

7.7.1 Insulation Characteristics Curves

35

30

25

20

15

10

5

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

20

40

60

Ambient Temperature (°C)

80

100

120

140

160

0

20

40

60

Ambient Temperature (°C)

80

100

120

140

160

Figure 7-14. Thermal Derating Curve for Safety-

Limiting Current, Side 1

Figure 7-15. Thermal Derating Curve for Safety-

Limiting Current, Side 2

4

3.5

3

2.5

2

1.5

1

0.5

0

20

40

60

80

100

Ambient Temperature (°C)

120

140

160

Figure 7-16. Thermal Derating Curve for Safety-Limiting Power

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8 Parameter Measurement Information

8.1 Accuracy Parameters

The ideal first-order transfer function of the TMCS1108-Q1 is given by Equation 1, where the output voltage is

a linear function of input current. The accuracy of the device is quantified both by the error terms in the transfer

function parameters, as well as by nonidealities that introduce additional error terms not in the simplified linear

model. See Total Error Calculation Examples for example calculations of total error, including all device error

terms.

V_OUT= S × I_IN+ V_OUT,0A

(1)

where

•

V_OUTis the analog output voltage.

S is the ideal sensitivity of the device.

I_INis the isolated input current.

V_OUT,0Ais the zero current output voltage for the device variant.

8.1.1 Sensitivity Error

Sensitivity is the proportional change in the sensor output voltage due to a change in the input conductor

current. This sensitivity is the slope of the first-order transfer function of the sensor, as shown in Figure 8-1. The

sensitivity of the TMCS1108-Q1 is tested and calibrated at the factory for high accuracy.

V_OUT(V)

V_{OUT, 0 A}+ V_FS+

V_NL

S = Slope (V/A)

best fit linear

V_{OUT, 0 A}

V_OE

0.1xV_S(AxU)

0.5xV_S(AxB)

V_{OUT, 0 A}œ V_FSœ

I_FSœ

I_FS+

I_IN(A)

Figure 8-1. Sensitivity, Offset, and Nonlinearity Error

Deviation from ideal sensitivity is quantified by sensitivity error, defined as the percent variation of the best-fit

measured sensitivity from the ideal sensitivity. When specified over a temperature range, this is the worst-case

sensitivity error at any temperature within the range.

e_S= [(S_fit– S_ideal) / S_ideal] × 100%

(2)

where

•

e_Sis the sensitivity error.

S_fitis the best fit sensitivity.

S_Idealis the ideal sensitivity.

8.1.2 Offset Error and Offset Error Drift

Offset error is the deviation from the ideal output voltage with zero input current through the device. Offset error

can be referred to the output as a voltage error V_OEor referred to the input as a current offset error I_OS. Offset

error is a single error source, however, and must only be included once in error calculations.

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The output voltage offset error of the TMCS1108-Q1 is the deviation of the measured V_OUTwith zero input

current from the ideal value of the zero current output voltage. This ideal voltage is either 10% of V_Sfor

unidirectional devices (AxU) or 50% of V_Sfor bidirectional devices (AxB), as shown in Equation 3 and Equation

4, respectively.

V_OE= V_OUT,0A- V_S* 0.1

(3)

V_OE= V_OUT,0A- V_S* 0.5

(4)

where

•

V_OUT,0Ais the device output voltage with zero input current.

The offset error includes errors in the internal reference, the magnetic offset of the Hall sensor and any offset

voltage errors of the signal chain.

The input referred (RTI) offset error is the output voltage offset error divided by the sensitivity of the device,

shown in Equation 5. Refer the offset error to the input of the device to allow for easier total error calculations

and direct comparison to input current levels. No matter how the calculations are done, the error sources

quantified by V_OEand I_OSare the same, and should only be included once for error calculations.

I_OS= V_OE/ S

(5)

Offset error drift is the change in the input-referred offset error per degree Celsius change in ambient

temperature. This parameter is reported in µA/°C. To convert offset drift to an absolute offset for a given change

in temperature, multiply the drift by the change in temperature and convert to percentage, as in Equation 6.

mA

èC

≈

«

’

I_OS,25èC+ I_{OS,drift ∆}

ì DT

÷

◊

e_I

% =

)

(

_OS,DT

I

IN

(6)

where

•

I_OS,driftis the specified input-referred device offset drift.

ΔT is the temperature range from 25°C.

8.1.3 Nonlinearity Error

Nonlinearity is the deviation of the output voltage from a linear relationship to the input current. Nonlinearity

voltage, as shown in Figure 8-1, is the maximum voltage deviation from the best-fit line based on measured

parameters, calculated by Equation 7.

V_NL= V_OUT,MEAS– (I_MEAS× S_fit+ V_OUT,0A

)

(7)

where

•

V_OUT,MEASis the voltage output at maximum deviation from best fit.

I_MEASis the input current at maximum deviation from best fit.

S_fitis the best-fit sensitivity of the device.

V_OUT,0Ais the device zero current output voltage.

Nonlinearity error (e_NL) for the TMCS1108-Q1 is the nonlinearity voltage specified as a percentage of the

full-scale output range (V_FS), as shown in Equation 8.

V_NL

e_NL= 100% *

V_FS

(8)

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8.1.4 Power Supply Rejection Ratio

Power supply rejection ratio (PSRR) is the change in device offset due to variation of supply voltage from the

nominal 5 V. The error contribution at the input current of interest can be calculated by Equation 9.

PSRR * (V_S- 5)

S

e_PSRR(%) =

I

IN

(9)

where

•

V_Sis the operational supply voltage.

S is the device senstivity.

8.1.5 Common-Mode Rejection Ratio

Common-mode rejection ratio (CMRR) quantifies the effective input current error due to a varying voltage on

the isolated input of the device. Due to magnetic coupling and galvanic isolation of the current signal, the

TMCS1108-Q1 has very high rejection of input common-mode voltage. Percent error contribution from input

common-mode variation can be calculated by Equation 10.

CMRR * V_CM

e_CMRR(%) =

I

IN

(10)

where

•

V_CMis the maximum operational AC or DC voltage on the input of the device.

8.1.6 External Magnetic Field Errors

The TMCS1108-Q1 does not have stray field-rejection capabilities, so external magnetic fields from adjacent

high-current traces or nearby magnets can impact the output measurement. The total sensitivity (S) of the device

is comprised of the initial transformation of input current to magnetic field quantified as the magnetic coupling

factor (G), as well as the sensitivity of the Hall element and the analog circuitry that is factory calibrated to

provide a final sensitivity. The output voltage is proportional to the input current by the device sensitivity, as

defined in Equation 11.

S = G * S_Hall* A_V

(11)

where

•

S is the TMCS1108-Q1 sensitivity in mV/A.

G is the magnetic coupling factor in mT/A.

S_Hallis the sensitivity of the Hall plate in mV/mT.

A_Vis the calibrated analog circuitry gain in V/V.

An external field, B_EXT, is measured by the Hall sensor and signal chain, in addition to the field generated by the

leadframe current, and is added as an extra input term in the total output voltage function:

V_OUT= B_EXT* S_Hall* A_V+I * G* S_Hall* A_V+ V_OUT,0A

IN

(12)

Observable from Equation 12 is that the impact of an external field is an additional equivalent input current

signal, I_BEXT, shown in Equation 13. This effective additional input current has no dependence on Hall or analog

circuitry sensitivity, so all gain variants have equivalent input-referred current error due to external magnetic

fields.

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B_EXT

G

I_B

=

EXT

(13)

This additional current error generates a percentage error defined by Equation 14.

B_EXT

G

e_B(%) =

EXT

I

IN

(14)

8.2 Transient Response Parameters

The transient response of the TMCS1108-Q1 is impacted by the 250 kHz sampling rate as defined in Transient

Response. Figure 8-2 shows the TMCS1108-Q1 response to an input current step sufficient to generate a 1-V

output change. The typical 4-µs sampling window can be observed as a periodic step. This sampling window

dominates the response of the device, and the response will have some probabilistic nature due to alignment of

the input step and the sampling window interval.

90

75

60

45

30

15

0

4

3.5

3

2.5

2

1.5

1

I_IN

V₁

V₂

-15

0.5

Time (4ms/div)

Figure 8-2. Transient Step Response

8.2.1 Slew Rate

Slew rate (SR) is defined as the V_OUTrate of change for a single integration step’s output transition, as shown

in Figure 8-3. Because the device often requires two sampling windows to reach a full 90% settling of its final

value, this slew rate is not equal to the 10%-90% transition time for the full output swing.

Input Current

t_r

90%

4ꢀs Sample

Window

4ꢀs Sample

Window

SR

4ꢀs Sample

Window

V_OUTresponse

1V

V_OUTresponse

SR

t_p

V_OUTresponse

10%

t_p

10%

t_p

10%

Figure 8-3. Small Current Input Step Transient Response

8.2.2 Propagation Delay and Response Time

Propagation delay is the time period between the input current waveform reaching 10% of its final value and

V_OUTreaching 10% of its final value. This propagation delay is heavily dependent upon the alignment of the

input current step and the sampling period of the TMCS1108-Q1, as shown for several different sampling

window cases in Figure 8-3.

Response time is the time period between the input current reaching 90% of its final value and the output

reaching 90% of its final value, for an input current step sufficient to cause a 1-V transition on the output. Figure

8-3 shows the response time of the TMCS1108-Q1 under three different time cases. Unless a step input occurs

directly during the beginning of one sampling window the response time will include two sampling intervals.

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8.2.3 Current Overload Parameters

Current overload response parameters are the transient behavior of the TMCS1108-Q1 to an input current step

consistent with a short circuit or fault event. Tested amplitude is twice the full scale range of the device, or 10V /

Sensitivity in V/A. Under these conditions, the TMCS1108-Q1 output will respond faster than in the case of a

small input current step due to the higher input amplitude signal. Response time and propagation delay are

measured in a similar manner to the case of a small input current step, as shown in Figure 8-4.

Input Current

t_r

90%

û I_IN=

10 V / S

V_OUTresponse

SR

10%

t_p

Figure 8-4. Current Overload Transient Response

Current overload recovery time is the required time for the device output to exit a saturated condition and return

to normal operation. The transient response of the device during this recovery period from a current overload is

shown in Figure 7-11.

8.2.4 CMTI, Common-Mode Transient Immunity

CMTI is the capability of the device to tolerate a rising/falling voltage step on the input without disturbance on

the output signal. The device is specified for the maximum common-mode transition rate under which the output

signal will not experience a greater than 200-mV disturbance that lasts longer than 1 µs. Higher edge rates than

the specified CMTI can be supported with sufficient filtering or blanking time after common-mode transitions.

8.3 Safe Operating Area

The input current safe operating area (SOA) of the TMCS1108-Q1 is constrained by self-heating due to power

dissipation in the input conductor. Depending upon use case, the SOA is constrained by multiple conditions,

including exceeding maximum junction temperature, Joule heating in the leadframe, or leadframe fusing under

extremely high currents. These mechanisms depend on pulse duration, amplitude, and device thermal states.

Current SOA strongly depends on the thermal environment and design of the system-level board. Multiple

thermal variables control the transfer of heat from the device to the surrounding environment, including air flow,

ambient temperature, and PCB construction and design. All ratings are for a single TMCS1108-Q1 device on

the TMCS1108EVM, with no air flow in the specified ambient temperature conditions. Device use profiles must

satisfy both continuous conduction and short-duration transient SOA capabilities for the thermal environment

under which the system will be operated.

8.3.1 Continuous DC or Sinusoidal AC Current

The longest thermal time constants of device packaging and PCB are on the order of seconds; therefore,

any continuous DC or sinusoidal AC periodic waveform with a frequency higher than 1 Hz can be evaluated

based on the rms continuous-current level. The continuous-current capability has a strong dependence upon

the operating ambient temperature range expected in operation. Figure 8-5 shows the maximum continuous

current-handling capability of the device on the TMCS1108EVM. Current capability falls off at higher ambient

temperatures because of the reduced thermal transfer from junction-to-ambient and increased power dissipation

in the leadframe. By improving the thermal design of an application the SOA can be extended to higher currents

at elevated temperatures. Using larger and heavier copper power planes, providing air flow over the board, or

adding heat sinking structures to the area of the device can all improve thermal performance.

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35

30

25

20

15

10

-55

-35

-15

5

25

45

65

85

105 125

Ambient Temperature (èC)

D012

Figure 8-5. Maximum Continuous RMS Current vs Ambient Temperature

8.3.2 Repetitive Pulsed Current SOA

For applications where current is pulsed between a high current and no current, the allowable capabilities are

limited by short-duration heating in the leadframe. The TMCS1108-Q1 can tolerate higher current ranges under

some conditions, however, for repetitive pulsed events, the current levels must satisfy both the pulsed current

SOA and the rms continuous current constraint. Pulse duration, duty cycle, and ambient temperate all impact the

SOA for repetitive pulsed events. Figure 8-6, Figure 8-7, Figure 8-8, and Figure 8-9 illustrate repetitive stress

levels based on test results from the TMCS1108EVM under which parametric performance and isolation integrity

was not impacted post-stress for multiple ambient temperatures. At high duty cycles or long pulse durations, this

limit approaches the continuous current SOA for a rms value defined by Equation 15.

I

= I

* D

IN,RMS

IN,P

(15)

where

•

I_IN,RMSis the RMS input current level

I_IN,Pis the pulse peak input current

D is the pulse duty cycle

250

200

150

100

50

160

140

120

100

80

1%

5%

10%

25%

50%

75%

1%

5%

10%

25%

50%

75%

60

40

20

0

0.001

0

0.001

0.01

0.1

Current Pulse Duration (s)

1

10

0.01

0.1

Current Pulse Duration (s)

1

10

D016

D017

T_A= 25°C

T_A= 85°C

Figure 8-6. Maximum Repetitive Pulsed Current vs Figure 8-7. Maximum Repetitive Pulsed Current vs

Pulse Duration Pulse Duration

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140

120

100

80

120

100

80

60

40

20

0

1%

5%

10%

25%

50%

75%

1%

5%

10%

25%

50%

75%

60

40

20

0

0.001

0.01

0.1

Current Pulse Duration (s)

1

10

0.001

0.01

0.1

Current Pulse Duration (s)

1

10

D018

D019

T_A= 105°C

T_A= 125°C

Figure 8-8. Maximum Repetitive Pulsed Current vs Figure 8-9. Maximum Repetitive Pulsed Current vs

Pulse Duration

8.3.3 Single Event Current Capability

Single higher-current events that are shorter duration can be tolerated by the TMCS1108-Q1, because the

junction temperature does not reach thermal equilibrium within the pulse duration. Figure 8-10 shows the short-

circuit duration curve for the device for single current-pulse events, where the leadframe resistance changes

after stress. This level is reached before a leadframe fusing event, but should be considered a upper limit for

short duration SOA. For long-duration pulses, the current capability approaches the continuous rms limit at the

given ambient temperature.

1000

100

T_A= 25°C

T_A= 125°C

10

0.001

0.01

0.1

Pulse Duration (s)

1

10

D004

Figure 8-10. Single-Pulse Leadframe Capability

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9 Detailed Description

9.1 Overview

The TMCS1108-Q1 is a precision Hall-effect current sensor, featuring a 100-V functional isolation working

voltage, < 3% full-scale error across temperature, and device options providing both unidirectional and

bidirectional current sensing. Input current flows through a conductor between the isolated input current pins.

The conductor has a 1.8-mΩ resistance at room temperature for low power dissipation and a 20-A RMS

continuous current handling capability up to 105°C ambient temperature on the TMCS1108EVM. The low-ohmic

leadframe path reduces power dissipation compared to alternative current measurement methodologies, and

does not require any external passive components, isolated supplies, or control signals on the high-voltage

side. The magnetic field generated by the input current is sensed by a Hall sensor and amplified by a precision

signal chain. The device can be used for both AC and DC current measurements and has a bandwidth of 80

kHz. There are multiple fixed-sensitivity device variants for a wide option of linear sensing ranges, and the

TMCS1108-Q1 can operate with a low voltage supply from 3 V to 5.5 V. The TMCS1108-Q1 is optimized for

high accuracy and temperature stability, with both offset and sensitivity compensated across the entire operating

temperature range.

9.2 Functional Block Diagram

VS

Temperature

Compensation

----------------------

Offset Cancellation

Hall

Element

Bias

IN+

IN–

Precision

Amplifier

Output

Amplifier

VOUT

VS

GND

9.3 Feature Description

9.3.1 Current Input

Input current to the TMCS1108-Q1 passes through the isolated side of the package leadframe through the

IN+ and IN– pins. The current flow through the package generates a magnetic field that is proportional to the

input current, and measured by a galvanically isolated, precision, Hall sensor IC. As a result of the electrostatic

shielding on the Hall sensor die, only the magnetic field generated by the input current is measured, thus limiting

input voltage switching pass-through to the circuitry. This configuration allows for direct measurement of currents

with high-voltage transients without signal distortion on the current-sensor output. The leadframe conductor

has a nominal resistance of 1.8 mΩ at 25°C, and has a typical positive temperature coefficient as defined in

Electrical Characteristics.

9.3.2 High-Precision Signal Chain

The TMCS1108-Q1 uses a precision, low-drift signal chain with proprietary sensor linearization techniques to

provide a highly accurate and stable current measurement across the full temperature range of the device. The

device is fully tested and calibrated at the factory to account for any variations in either silicon or packaging

process variations. The full signal chain provides a fixed sensitivity voltage output that is proportional to the

current through the leadframe of the isolated input.

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9.3.2.1 Lifetime and Environmental Stability

The same compensation techniques utilized in the TMCS1108-Q1 to reduce temperature drift also greatly

reduce lifetime drift due to aging, stress, and environmental conditions. Typical magnetic sensors suffer from

up to 2% to 3% of sensitivity drift due to aging at high operating temperatures. The TMCS1108-Q1 has greatly

improved lifetime drift, as defined in the Electrical Characteristics table for total sensitivity error measured after

the worst-case stress test during a three lot AEC-Q100 qualification. All other stress tests prescribed by an

AEC-Q100 qualification caused lower than the specified sensitivity error, and were within the bounds specified

within the Electrical Characteristics table. Figure 9-1 shows the total sensitivity error after the worst case stress

test, a Highly Accelerated Stress Test (HAST) at 130°C and 85% relative humidity (RH), while Figure 9-2 and

Figure 9-3 show the sensitivity and offset error drift after a 1000 hour, 125°C high temperature operating life

stress test as specified by AEC-Q100. This test mimics typical device lifetime operation, and shows the likely

device performance variation due to aging is vastly improved compared to typical magnetic sensors.

160

140

120

100

80

200

180

160

140

120

100

80

60

40

20

0

-1% -.8% -.6% -.4% -.2% 0% .2% .4% .6% .8% 1%

0

-1% -.8% -.6% -.4% -.2% 0% .2% .4% .6% .8% 1%

D020

D021

Sensitivity Drift (%)

Figure 9-1. Sensitivity Error After 130°C, 85% RH

HAST

Sensitivity Drift (%)

Figure 9-2. Sensitivity Error Drift After AEC-Q100

High Temperature Operating Life Stress Test

120

100

80

60

40

20

0

-50 -40 -30 -20 -10

0

10

20

30

40

50

D022

I_OSDrift (mA)

Figure 9-3. Input-Referred Offset Drift After AEC-Q100 High Temperature Operating Life Stress Test

9.3.2.2 Frequency Response

The TMCS1108-Q1 signal chain has a spectral response atypical of a linear analog system due to its discrete

time sampling. The 250-kHz sampling interval implies an effective Nyquist frequency of 125 kHz, which limits

spectral response to below this frequency. Higher frequency content than this frequency will be aliased down to

lower spectrums.

The TMCS1108-Q1 bandwidth is defined by the –3-dB spectral response of the entire signal chain which is

constrained by the sampling frequency. Normalized gain and phase plots across frequency are shown below in

Figure 9-4 and Figure 9-5, all variants have the same bandwidth and phase response. Signal content beyond the

3-dB bandwidth level will still have significant fundamental frequency transmission through the signal chain, but

at increasing distortion levels.

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4

3

30

0

2

-30

1

0

-60

-1

-2

-3

-4

-5

-90

-120

-150

-180

All gains 80kHz -3dB

-6

10

100

1k 10k

Frequency (Hz)

100k

1M

10

100

1k

Frequency (Hz)

10k

100k

Figure 9-4. Normalized Gain, All Variants

Figure 9-5. Normalized Phase, All Variants

9.3.2.3 Transient Response

The TMCS1108-Q1 signal chain includes a precision analog front end followed by a sampled integrator. At the

end of each integration cycle, the signal propagates to the output. Depending on the alignment of a change

in input current relative to the sampling window, the output might not settle to the final signal until the second

integration cycle. Figure 9-6 shows a typical output waveform response to a 10-kHz sine wave input current.

For a slowly varying input current signal, the output is a discrete time representation with a phase delay of the

integration sampling window. Adding a first order filter of 100 kHz effectively smooths the output waveform with

minimal impact to phase response.

5.5

5

6

VOUT

Input Current

VOUT, 100 kHz Filter

5

4.5

4

3

3.5

3

2

1

2.5

2

0

-1

-2

-3

-4

1.5

1

0.5

0

-5

.00025

0

.00005

.0001

.00015

.0002

Time (s)

D015

Figure 9-6. Response Behavior to 10-kHz Sine Wave Input Current

Figure 9-7 shows two transient waveforms to an input-current step event, but occurring at different times during

the sampling interval. In both cases, the full transition of the output takes two sampling intervals to reach the

final output value. The timing of the current event relative to the sampling window determines the proportional

amplitude of the first and second sampling intervals.

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90

75

60

45

30

15

0

4

3.5

3

2.5

2

1.5

1

I_IN

V₁

V₂

-15

0.5

Time (4ms/div)

Figure 9-7. Transient Response to Input-Current Step Sufficient for 1-V Output Swing

The output value is effectively an average over the sampling window; therefore, a large-enough current transient

can drive the output voltage to near the full scale range in the first sample response. This condition is likely to

be true in the case of a short-circuit or fault event. Figure 9-8 shows an input-current step twice the full scale

measurable range with two output voltage responses illustrating the effect of the sampling window. The relative

timing and size of the input current transition determines both the time and amplitude of the first output transition.

In either case, the total response time is slightly longer than one integration period.

70

60

50

40

30

20

10

0

6

5

4

3

2

1

0

I_IN

V₁

V₂

-1

-2

-10

Time (4ms/div)

Figure 9-8. Transient Response to a Large Input Current Step

9.3.3 Internal Reference Voltage

The device has an internal resistor divider from the analog supply V_Sthat determines the zero-current

output voltage, V_OUT,0A. This zero-current output level, along with sensitivity, determines the measurable input

current range of the device and allows for unidirectional or bidirectional sensing as described in Absolute

Maximum Ratings. The TMCS1108AxB-Q1 variants have a zero-current output set by Equation 16, while the

TMCS1108AxU-Q1 devices have a zero-current output voltage set by Equation 17.

V_OUT,0A= V_S× 0.5

V_OUT,0A= V_S× 0.1

(16)

(17)

These respective reference voltages enable a bidirectional measurable current range for the TMCS1108A2B-Q1

devices and a unidirectional measurement range for the TMCS1108A2U-Q1 devices, as shown in Figure 9-9.

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5

4.5

4

3.5

3

2.5

2

1.5

1

A2B

A2U

0.5

0

-25 -20 -15 -10 -5

0

5

10 15 20 25 30 35 40 45

Input Current (A)

Figure 9-9. Output Voltage Relationship to Input Current for TMCS1108A2B-Q1 and TMCS1108A2U-Q1

9.3.4 Current-Sensing Measurable Ranges

The TMCS1108-Q1 measurable input current range depends on the device variant, as well as the analog supply

V_S. The output voltage is limited by V_OUTswing to either supply or ground. The linear output swing range to both

V_Sand GND is calculated by Equation 18 and Equation 19.

V_OUT,max= V_S– Swing_VS

V_OUT,min= Swing_GND

(18)

(19)

Rearranging the transfer function of the device to solve for input current and substituting V_OUT,maxand V_OUT,min

yields maximum and minimum measurable input current ranges described by Equation 20 and Equation 21.

I_IN,MAX+= (V_OUT,max– V_OUT,0A) / S

I_IN,MAX-= (V_OUT,0A– V_OUT,min) / S

(20)

(21)

where

•

I_IN,MAX+is the maximum linear measurable positive input current.

I_IN,MAX-is the maximum linear measurable negative input current.

S is the sensitivity of the device variant.

V_OUT,0Ais the appropriate zero current output voltage.

TMCS1108AxB-Q1 variants accommodate bidirectional current sensing by creating zero-current output voltage

equal to half of the supply (V_S) potential, while TMCS1108AxU-Q1 variants provide most of the measurable

range for positive currents.

9.4 Device Functional Modes

9.4.1 Power-Down Behavior

As a result of the inherent galvanic isolation of the device, very little consideration must be paid to powering

down the device, as long as the limits in the Absolute Maximum Ratings table are not exceeded on any pins.

The isolated current input and the low-voltage signal chain can be decoupled in operational behavior, as either

can be energized with the other shut down, as long as the isolation barrier capabilities are not exceeded.

The low-voltage power supply can be powered down while the isolated input is still connected to an active

high-voltage signal or system.

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10 Application and Implementation

Note

Information in the following applications sections is not part of the TI component specification,

and TI does not warrant its accuracy or completeness. TI’s customers are responsible for

determining suitability of components for their purposes, as well as validating and testing their design

implementation to confirm system functionality.

10.1 Application Information

The key feature sets of the TMCS1108-Q1 provide significant advantages in any application where an isolated

current measurement is required.

•

Galvanic isolation provides a high isolated working voltage and excellent immunity to input voltage transients.

Hall based measurement simplifies system level solution without the need for a power supply on the high

voltage (HV) side.

•

An input current path through the low impedance conductor minimizes power dissipation.

Excellent accuracy and low temperature drift eliminate the need for multipoint calibrations without sacrificing

system performance.

•

A wide operating supply range enables a single device to function across a wide range of voltage levels.

These advantages increase system-level performance while minimizing complexity for any application where

precision current measurements must be made on isolated currents. Specific examples and design requirements

are detailed in the following section.

10.1.1 Total Error Calculation Examples

Total error can be calculated for any arbitrary device condition and current level. Error sources considered

should include input-referred offset current, power-supply rejection, input common-mode rejection, sensitivity

error, nonlinearity, and the error caused by any external fields. Compare each of these error sources in

percentage terms, as some are significant drivers of error and some have inconsequential impact to current

error. Offset (Equation 22), PSRR (Equation 23), CMRR (Equation 24), and external field error (Equation 25) are

all referred to the input, and so, are divided by the actual input current I_INto calculate percentage errors. For

calculations of sensitivity error and nonlinearity error, the percentage limits explicitly specified in the Electrical

Characteristics table can be used.

I_OS

e_I(%) =

OS

I

IN

(22)

PSRR * (V_S- 5)

S

e_PSRR(%) =

I

IN

(23)

CMRR * V_CM

e_CMRR(%) =

I

IN

(24)

B_EXT

G

e_B(%) =

EXT

I

IN

(25)

When calculating error contributions across temperature, only the input offset current and sensitivity error

contributions vary significantly. For determining offset error over a given temperature range (ΔT), use Equation

26 to calculate total offset error current. Sensitivity error is specified for both –40°C to 85°C and –40°C to 125°C.

The appropriate specification should be used based on application operating ambient temperature range.

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mA

èC

≈

«

’

I_OS,25èC+ I_{OS,drift ∆}

ì DT

÷

◊

e_I

% =

)

(

_OS,DT

I

IN

(26)

To accurately calculate the total expected error of the device, the contributions from each of the individual

components above must be understood in reference to operating conditions. To account for the individual error

sources that are statistically uncorrelated, a root sum square (RSS) error calculation should be used to calculate

total error. For the TMCS1108-Q1, only the input referred offset current (I_OS), CMRR, and PSRR are statistically

correlated. These error terms are lumped in an RSS calculation to reflect this nature, as shown in Equation 27

for room temperature and Equation 28 for across a given temperature range. The same methodology can be

applied for calculating typical total error by using the appropriate error term specification.

+ e_PSRR+ e_CMRR²+ e

²+ e_S²+ e_NL

2

e_RSS(%) =

e

(

)

I_OS

B_EXT

(27)

+ e_PSRR+ e_CMRR²+ e

²+ e_S,DT²+ e_NL

B_EXT

2

e_RSS,DT(%) =

e

(

)

I_OS,DT

(28)

The total error calculation has a strong dependence on the actual input current; therefore, always calculate

total error across the dynamic range that is required. These curves asymptotically approach the sensitivity and

nonlinearity error at high current levels, and approach infinity at low current levels due to offset error terms with

input current in the denominator. Key figures of merit for any current-measurement system include the total error

percentage at full-scale current, as well as the dynamic range of input current over which the error remains

below some key level. Figure 10-1 illustrates the RSS maximum total error as a function of input current for a

TMCS1108A2B at room temperature and across the full temperature range with V_Sof 5 V.

20

RSS Max Error, 25°C

18

16

14

12

10

8

RSS Max Error, -40°C to 85°C

RSS Max Error, -40°C to 125°C

6

4

2

0

5

10

15

20

25

Input Current (A)

Figure 10-1. RSS Error vs Input Current

10.1.1.1 Room Temperature Error Calculations

For room-temperature total-error calculations, specifications across temperature and drift are ignored. As an

example, consider a TMCS1108A1B with a supply voltage (V_S) of 3.3 V and a worst-case common-mode

excursion of 100 V to calculate operating-point-specific parameters. Consider a measurement error due to an

external magnetic field of 30 µT, roughly the Earth's magnetic field strength. The full-scale current range of the

device in specified conditions is slightly greater than 28 A; therefore, calculate error at both 25 A and 12.5 A

to highlight error dependence on the input-current level. Table 10-1 shows the individual error components and

RSS maximum total error calculations at room temperature under the conditions specified. Relative to other

errors, the additional error from CMRR is negligible, and can typically be ignored for total error calculations.

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Table 10-1. Total Error Calculation: Room Temperature Example

% TOTAL ERROR AT % TOTAL ERROR AT

ERROR COMPONENT

SYMBOL

EQUATION

I_IN= 25 A

I_IN= 12.5 A

I_OS

e_I(%) =

Input offset error

e_Ios

0.64%

1.28%

OS

I

IN

PSRR * (V_S- 5)

S

e_PSRR(%) =

PSRR error

e_PSRR

0.88%

1.77%

I

IN

CMRR * V_CM

e_CMRR(%) =

CMRR error

e_CMRR

0.002%

0.11%

0.004%

0.22%

I

IN

B_EXT

G

External Field error

e_Bext

e_B(%) =

EXT

I

IN

Sensitivity error

e_S

Specified in Electrical Characteristics

1.2%

0.5%

1.2%

0.5%

Nonlinearity error

e_NL

+ e_PSRR+ e_CMRR²+ e

²+ e_S²+ e_NL

2

RSS total error

e_RSS

2.01%

3.32%

e_RSS(%) =

e

(

)

I_OS

B_EXT

10.1.1.2 Full Temperature Range Error Calculations

To calculate total error across any specific temperature range, Equation 27 and Equation 28 should be used for

RSS maximum total errors, similar to the example for room temperatures. Conditions from the example in Room

Temperature Error Calculations have been replaced with their respective equations and error components for a

–40°C to 85°C temperature range below in Table 10-2.

Table 10-2. Total Error Calculation: –40°C to 85°C Example

% MAX TOTAL

ERROR AT I_IN= 12.5

A

% MAX TOTAL

ERROR AT I_IN= 25 A

ERROR COMPONENT

SYMBOL

EQUATION

mA

èC

≈

«

’

I_OS,25èC+ I_{OS,drift ∆}

ì DT

÷

◊

Input offset error

e_Ios,ΔT

0.80%

1.59%

e_I

% =

)

(

_OS,DT

I

IN

PSRR * (V_S- 5)

S

e_PSRR(%) =

PSRR error

e_PSRR

0.88%

1.77%

I

IN

CMRR * V_CM

e_CMRR(%) =

CMRR error

e_CMRR

0.002%

0.11%

0.004%

0.22%

I

IN

B_EXT

G

External Field error

e_Bext

e_B(%) =

EXT

I

IN

Sensitivity error

e_S,ΔT

e_NL

Specified in Electrical Characteristics

1.8%

0.5%

1.8%

0.5%

Nonlinearity error

+ e_PSRR+ e_CMRR²+ e_B²+ e_S,DT²+ e_NL

2.51%

3.83%

2

RSS total error

e_RSS,ΔT

e_RSS,DT(%) =

e

(

)

I_OS,DT

EXT

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10.2 Typical Application

Inline sensing of inductive load currents, such as motor phases, provides significant benefits to the performance

of a control systems, allowing advanced control algorithms and diagnostics with minimal postprocessing. A

primary challenge to inline sensing is that the current sensor is subjected to full HV supply-level PWM transients

driving the load. The inherent isolation of an in-package Hall-effect current sensor topology helps overcome this

challenge, providing high common-mode immunity, as well as isolation between the high-voltage motor drive

levels and the low-voltage control circuitry. Figure 10-2 illustrates the use of the TMCS1108-Q1 in such an

application, driving the inductive load presented by a three phase motor.

5 V

VS

V+

IN+

VOUT

TMCS1108-Q1

IN–

GND

TMCS1108-Q1

V-

Figure 10-2. Inline Motor Phase Current Sensing

10.2.1 Design Requirements

For current sensing of a three-phase motor application, make sure to provide linear sensing across the expected

current range, and make sure that the device remains within working thermal constraints. A single TMCS1108-

Q1 for each phase can be used, or two phases can be measured, and the third phase calculated on the motor-

controller host processor. For this example, consider a nominal supply of 5 V but a minimum of 4.9 V to include

for some supply variation. Maximum output swings are defined according to TMCS1108-Q1 specifications, and a

full-scale current measurement of ±20 A is required.

Table 10-3. Example Application Design Requirements

DESIGN PARAMETER

EXAMPLE VALUE

V_S,nom

V_S,min

I_IN,FS

5 V

4.9 V

±20 A

10.2.2 Detailed Design Procedure

The primary design parameter for using the TMCS1108-Q1 is selecting the correct sensitivity variant, and

because positive and negative current must be measured a bidirectional variant should be selected (A1B-A4B).

Further consideration of noise and integration with an ADC can be explored, but is beyond the scope of this

application design example. The TMCS1108AxB-Q1 transfer function is effectively a transimpedance with a

variable offset set by V_OUT,0A, which is internally set to half of the analog supply as defined by Equation 29.

V_OUT= I_IN× S + V_OUT,0A= I_IN× S + V_S× .05

(29)

Design of the sensing solution focuses on maximizing the sensitivity of the device while maintaining linear

measurement over the expected current input range. The TMCS1108-Q1 has a slightly smaller linear output

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range to the supply than to ground; therefore, the measurable current range is always constrained by the

positive swing to supply, Swing_VS. To account for the operating margin, consider the minimum possible supply

voltage V_S,min. With the previous parameters, the maximum linear output voltage range is the range between

V_OUT,maxand V_OUT,0A, as defined by Equation 30.

V_OUT,max– V_OUT,0A= V_S,min– Swing_VS– 0.5 × V_S,min

(30)

Design parameters for this example application are shown in Table 10-4 along with the calculated output range.

Table 10-4. Example Application Design Parameters

DESIGN PARAMETER

EXAMPLE VALUE

Swing_VS

0.2 V

V_OUT,max

4.7 V

V_OUT,0Aat V_S,min

V_OUT,max– V_OUT,0A

2.45 V

2.25 V

These design parameters result in a maximum positive linear output voltage swing of 2.25 V. To determine which

sensitivity variant of the TMCS1108-Q1 most fully uses this linear range, calculate the maximum current range

by Equation 31 for a bidirectional current (I_B,MAX).

IB,max = (V_OUT,max- V_OUT,0A) / S_A<x>

(31)

where

S_A<x>is the sensitivity of the relevant A1-A4 variant.

•

Table 10-5 shows such calculation for each gain variant of the TMCS1108-Q1 with the appropriate sensitivities.

Table 10-5. Maximum Full-Scale Current Ranges With 2.25-V Positive Output Swing

SENSITIVITY VARIANT

TMCS1108A1B-Q1

TMCS1108A2B-Q1

TMCS1108A3B-Q1

TMCS1108A4B-Q1

SENSITIVITY

I_B,MAX

50 mV/A

±45 A

100 mV/A

200 mV/A

400 mV/A

±22.5 A

±11.25 A

±5.6 A

In general, the highest sensitivity variant that provides for the desired full-scale current range is selected. For the

design parameters in this example, the TMCS1108A2B-Q1 with a sensitivity of 0.1 V/A is the proper selection

because the maximum calculated ±22.5-A linear measurable range is sufficient for the desired ±20-A full-scale

current.

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10.2.3 Application Curve

The transfer function of the TMCS1108-Q1 linear sensing range for the nominal design parameters is shown in

Figure 10-3.

5

23 A, 4.8 V

4.5

4

3.5

0 A, 2.5 V

3

2.5

2

1.5

1

-24.5 A, 0.05 V

0.5

0

-25 -20 -15 -10

-5

Input Current (A)

0

5

10

15

20

25

D001

Figure 10-3. Application Example Design Transfer Curve

11 Power Supply Recommendations

The TMCS1108-Q1 only requires a power supply (V_S) on the low-voltage isolated side, which powers the analog

circuitry independent of the isolated current input. V_Sdetermines the full-scale output range of the analog output

V_OUT, and can be supplied with any voltage between 3 V and 5.5 V. The TMCS1108-Q1 zero-current output

voltage is derived from VS using a resistor divider; therefore, take care to optimize the power supply path for

both noise and stability across temperature to provide the highest precision measurement. To filter noise in

the power-supply path, place a low-ESR decoupling capacitor of 0.1 µF between V_Sand GND pins as close

as possible to the supply and ground pins of the device. To compensate for noisy or high-impedance power

supplies, add more decoupling capacitance.

The TMCS1108-Q1 power supply V_Scan be sequenced independently of current flowing through the input.

However, there is a typical 25 ms delay between V_Sreaching the recommended operating voltage and the

analog output being valid. Within this delay V_OUTtransfers from a high impedance state to the active drive state,

during which time the output voltage could transition between GND and V_S. If this behavior must be avoided, a

stable supply voltage to V_Sshould be provided for longer than 25 ms prior to applying input current.

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12 Layout

12.1 Layout Guidelines

The TMCS1108-Q1 is specified for a continuous current handling capability on the TMCS1108EVM, which

uses 3-oz copper pour planes. This current capability is fundamentally limited by the maximum device junction

temperature and the thermal environment, primarily the PCB layout and design. To maximize current-handling

capability and thermal stability of the device, take care with PCB layout and construction to optimize the

thermal capability. Efforts to improve the thermal performance beyond the design and construction of the

TMCS1108EVM can result in increased continuous-current capability due to higher heat transfer to the ambient

environment. Keys to improving thermal performance of the PCB include:

•

Use large copper planes for both input current path and isolated power planes and signals.

Use heavier copper PCB construction.

Place thermal via farms around the isolated current input.

Provide airflow across the surface of the PCB.

The TMCS1108-Q1 senses external magnetic fields, so make sure to minimize adjacent high-current traces in

close proximity to the device. The input current trace can contribute additional magnetic field to the sensor if the

input current traces are routed parallel to the vertical axis of the package. Figure 12-1 illustrates the most optimal

input current routing into the TMCS1108-Q1. As the angle that the current approaches the device deviates from

0° to the horizontal axis, the current trace contributes some additional magnetic field to the sensor, increasing

the effective sensitivity of the device. If current must be routed parallel to the package vertical axis, move the

routing away from the package to minimize the impact to the sensitivity of the device. Terminate the input current

path directly underneath the package lead footprint, and use a merged copper input trace for both the IN+ and

IN– inputs.

I_IN,}ꢀ

}

IN+

INœ

1

2

3

4

8

7

6

5

VS

I_IN,0ꢀ

VOUT

NC

I_IN,0ꢀ

GND

}

I_IN,}ꢀ

Figure 12-1. Magnetic Field Generated by Input Current Trace

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In addition to thermal and magnetic optimization, make sure to consider the PCB design required creepage and

clearance for system-level isolation requirements. Maintain required creepage between solder stencils, as shown

in Figure 12-2, if possible. If not possible to maintain required PCB creepage between the two isolated sides at

board level, add additional slots or grooves to the board. If more creepage and clearance is required for system

isolation levels than is provided by the package, the entire device and solder mask can be encapsulated with an

overmold compound to meet system-level requirements.

Cu Plane

Solder Mask Creepage

VS

Cu Plane

IN+

VOUT

NC

INœ

GND

Cu Plane

Figure 12-2. Layout for System Creepage Requirements

12.2 Layout Example

An example layout, shown in Figure 12-3, is from the TMCS1108EVM. Device performance is targeted for

thermal and magnetic characteristics of this layout, which provides optimal current flow from the terminal

connectors to the device input pins while large copper planes enhance thermal performance.

Figure 12-3. Recommended Board Top (Left) and Bottom (Right) Plane Layout

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13 Device and Documentation Support

13.1 Device Support

13.1.1 Development Support

For development tool support see the following:

•

TMCS1108EVM

TMCS1108 TI-TINA Model

TMCS1108 TINA-TI Reference Design

13.2 Documentation Support

13.2.1 Related Documentation

For related documentation see the following:

•

Texas Instruments, TMCS1108EVM users's guide

Texas Instruments, Enabling Precision Current Sensing Designs with Nonratiometric Magnetic Current

Sensors

•

Texas Instruments, Low-Drift, Precision, In-Line Isolated Magnetic Motor Current Measurements

13.3 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on

Subscribe to updates to register and receive a weekly digest of any product information that has changed. For

change details, review the revision history included in any revised document.

13.4 Support Resources

TI E2E^™support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

13.5 Trademarks

TI E2E^™is a trademark of Texas Instruments.

All trademarks are the property of their respective owners.

13.6 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

13.7 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

14 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGE OUTLINE

D0008B

SOIC - 1.75 mm max height

SCALE 2.800

SMALL OUTLINE INTEGRATED CIRCUIT

C

SEATING PLANE

.228-.244 TYP

[5.80-6.19]

.004 [0.1] C

A

PIN 1 ID AREA

6X .050

[1.27]

8

1

2X

.189-.197

[4.81-5.00]

NOTE 3

.150

[3.81]

4X (0 -15 )

4

5

8X .012-.020

[0.31-0.51]

B

.150-.157

[3.81-3.98]

NOTE 4

.069 MAX

[1.75]

.010 [0.25]

C A B

.005-.010 TYP

[0.13-0.25]

4X (0 -15 )

SEE DETAIL A

.010

[0.25]

.004-.010

[0.11-0.25]

0 - 8

.016-.050

[0.41-1.27]

DETAIL A

TYPICAL

.041

[1.04]

4221445/C 02/2019

NOTES:

1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.

Dimensioning and tolerancing per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold ﬂash, protrusions, or gate burrs. Mold ﬂash, protrusions, or gate burrs shall not

exceed .006 [0.15], per side.

4. This dimension does not include interlead ﬂash.

5. Reference JEDEC registration MS-012, variation AA.

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EXAMPLE BOARD LAYOUT

D0008B

SOIC - 1.75 mm max height

SMALL OUTLINE INTEGRATED CIRCUIT

8X (.055)

[1.4]

8X (.061 )

[1.55]

SEE

DETAILS

SEE

DETAILS

SYMM

1

8

8X (.024)

[0.6]

8X (.024)

[0.6]

SYMM

(R.002 ) TYP

[0.05]

(R.002 )

[0.05]

TYP

5

4

6X (.050 )

[1.27]

6X (.050 )

[1.27]

(.213)

[5.4]

(.217)

[5.5]

HV / ISOLATION OPTION

.162 [4.1] CLEARANCE / CREEPAGE

IPC-7351 NOMINAL

.150 [3.85] CLEARANCE / CREEPAGE

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:6X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

EXPOSDE

METAL

EXPOSED

METAL

.0028 MIN

[0.07]

ALL AROUND

.0028 MAX

[0.07]

ALL AROUND

SOLDER MASK

DEFINED

NON SOLDER MASK

DEFINED

SOLDER MASK DETAILS

4221445/C 02/2019

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

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EXAMPLE STENCIL DESIGN

D0008B

SOIC - 1.75 mm max height

SMALL OUTLINE INTEGRATED CIRCUIT

8X (.061 )

[1.55]

8X (.055)

[1.4]

SYMM

1

8

8X (.024)

[0.6]

8X (.024)

[0.6]

SYMM

(R.002 ) TYP

[0.05]

(R.002 )

[0.05]

TYP

5

4

6X (.050 )

[1.27]

6X (.050 )

[1.27]

(.217)

[5.5]

(.213)

[5.4]

HV / ISOLATION OPTION

.162 [4.1] CLEARANCE / CREEPAGE

IPC-7351 NOMINAL

.150 [3.85] CLEARANCE / CREEPAGE

SOLDER PASTE EXAMPLE

BASED ON .005 INCH [0.127 MM] THICK STENCIL

SCALE:6X

4221445/C 02/2019

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may oﬀer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have diﬀerent recommendations for stencil design.

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PACKAGE MATERIALS INFORMATION

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18-Sep-2021

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

A0

B0

K0

P1

W

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

TMCS1108A1BQDRQ1

TMCS1108A1UQDRQ1

TMCS1108A2BQDRQ1

TMCS1108A2UQDRQ1

TMCS1108A3BQDRQ1

TMCS1108A3UQDRQ1

TMCS1108A4BQDRQ1

TMCS1108A4UQDRQ1

SOIC

D

8

2500

330.0

12.4

6.4

5.2

2.1

8.0

12.0

Q1

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

18-Sep-2021

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

TMCS1108A1BQDRQ1

TMCS1108A1UQDRQ1

TMCS1108A2BQDRQ1

TMCS1108A2UQDRQ1

TMCS1108A3BQDRQ1

TMCS1108A3UQDRQ1

TMCS1108A4BQDRQ1

TMCS1108A4UQDRQ1

SOIC

D

8

2500

350.0

43.0

Pack Materials-Page 2

IMPORTANT NOTICE AND DISCLAIMER

TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE

DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”

AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY

IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD

PARTY INTELLECTUAL PROPERTY RIGHTS.

These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate

TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable

standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you

permission to use these resources only for development of an application that uses the TI products described in the resource. Other

reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third party

intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims, damages,

costs, losses, and liabilities arising out of your use of these resources.

TI’s products are provided subject to TI’s Terms of Sale (https:www.ti.com/legal/termsofsale.html) or other applicable terms available either

on ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s

applicable warranties or warranty disclaimers for TI products.IMPORTANT NOTICE

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

型号:	TMCS40
生命周期：	Obsolete
IHS 制造商：	NIPPON CHEMI-CON CORP
包装说明：	, 1210
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8532.24.0020
风险等级：	5.69
电容器类型：	CERAMIC CAPACITOR
介电材料：	CERAMIC
制造商序列号：	TMC
安装特点：	SURFACE MOUNT
多层：	Yes
最高工作温度：	125 °C
最低工作温度：	-55 °C
封装形状：	RECTANGULAR PACKAGE
包装方法：	TAPE
尺寸代码：	1210
表面贴装：	YES
端子形状：	WRAPAROUND
Base Number Matches：	1

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