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产品型号TPC8128的Datasheet PDF文件预览

TPC8128  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS)  
TPC8128  
Lithium Ion Battery Applications  
Unit: mm  
Power Management Switch Applications  
Small footprint due to small and thin package  
Low drain-source ON-resistance: R = 3.9 mΩ (typ.)  
DS (ON)  
Low leakage current: I  
= 10 μA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement mode: V = 0.8 to 2.0 V (V  
= 10 V, I = 0.5mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
25/+20  
16  
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
64  
DP  
Drain power dissipation (t = 10 s)  
(Note 2a)  
P
1.9  
1.0  
166  
W
W
D
D
JEDEC  
JEITA  
Drain power dissipation (t = 10 s)  
(Note 2b)  
P
Single pulse avalanche energy  
(Note 3)  
TOSHIBA  
2-6J1B  
E
mJ  
AS  
Weight: 0.080 g (typ.)  
Avalanche current  
(Note 1)  
I
16  
150  
A
AR  
Channel temperature  
Storage temperature range  
T
°C  
°C  
ch  
Circuit Configuration  
T
55 to 150  
stg  
8
7
6
5
Note 1, Note 2, Note 3 : See the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
1
2
3
4
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-11-20  
TPC8128  
Thermal Characteristics  
Characteristics  
Symbol  
Max  
65.8  
125  
Unit  
°C/W  
°C/W  
Thermal resistance, channel to ambient  
R
th (ch-a)  
th (ch-a)  
(t = 10 s)  
(Note 2a)  
Thermal resistance, channel to ambient  
R
(t = 10 s)  
(Note 2b)  
Marking (Note 4)  
Part No.  
(or abbreviation code)  
T P C 8 1 2 8  
Lot No.  
Note 5  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: (a)Device mounted on a glass-epoxy board (a)  
(b)Device mounted on a glass-epoxy board (b)  
FR-4  
FR-4  
25.4 × 25.4 × 0.8  
(Unit: mm)  
25.4 × 25.4 × 0.8  
(Unit: mm)  
(a)  
(b)  
Note 3:  
V
DD  
= −24 V, T = 25 °C (initial), L = 500 μH, R = 25 Ω, I = −16 A  
AR  
ch  
G
Note 4: on lower left of the marking indicates Pin 1.  
Weekly code: (Three digits)  
Week of manufacture  
(01 for the first week of a year: sequential number up to 52 or 53)  
Year of manufacture  
(The last digit of a year)  
Note 5: A line under a Lot No. identifies the indication of product Labels.  
Not underlined: [[Pb]]/INCLUDES > MCV  
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS  
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27  
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.  
2
2009-11-20  
TPC8128  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= ±20 V, V  
= −30 V, V  
= 0 V  
±100  
10  
nA  
GSS  
GS  
DS  
DS  
GS  
GS  
GS  
Drain cut-OFF current  
I
= 0 V  
μA  
DSS  
V
V
I
I
= −10 mA, V  
= −10 mA, V  
= 0 V  
30  
21  
0.8  
(BR) DSS  
(BR) DSX  
D
D
Drain-source breakdown voltage  
Gate threshold voltage  
V
V
= 10 V (Note 6)  
V
V
V
V
= −10 V, I = −0.5 mA  
2.0  
6.9  
5
th  
DS  
GS  
GS  
D
= −4.5 V, I = −8 A  
5.3  
3.9  
4800  
800  
900  
D
Drain-source ON-resistance  
R
mΩ  
DS (ON)  
= −10 V, I = −8 A  
D
Input capacitance  
C
C
iss  
V
= −10 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
Reverse transfer capacitance  
Output capacitance  
DS  
rss  
C
oss  
Rise time  
t
10  
19  
r
0 V  
I
= −8 A  
D
V
GS  
V
OUT  
10 V  
Turn-ON time  
Switching time  
t
on  
ns  
Fall time  
t
140  
f
V
≈ −15 V  
DD  
Turn-OFF time  
t
420  
115  
off  
Duty 1%, t = 10 μs  
w
Total gate charge  
Q
g
(gate-source plus gate-drain)  
V
I
≈ −24 V, V  
DD  
= −16 A  
= −10 V,  
GS  
nC  
Gate-source charge 1  
Q
11  
30  
D
gs1  
Gate-drain (“miller”) charge  
Q
gd  
Source-Drain Ratings and Characteristics (Ta = 25°C)  
Characteristics  
Pulse  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Drain reverse  
current  
(Note 1)  
I
64  
A
V
DRP  
Forward voltage (diode)  
V
I
= −16 A, V = 0 V  
GS  
1.2  
DSF  
DR  
Note 6: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum  
rating of drain-source voltage.  
3
2009-11-20  
TPC8128  
I
– V  
I – V  
D DS  
D
DS  
20  
16  
12  
8  
50  
40  
Common source  
Ta = 25°C  
Common source  
Ta = 25°C  
Pulse test  
3  
10  
2.8  
3  
3.6  
2.4  
2.6  
4.5  
10  
2.3  
2.5  
Pulse test  
2.5  
2.6  
3.6  
4.5  
2.4  
2.2  
2.3  
2.2  
30  
20  
10  
0
2.1  
2  
2.1  
2  
4  
V
= −1.9 V  
GS  
V
= −1.9 V  
GS  
0
0
0.2  
0.4  
0.6  
0.8  
1  
0
0.4  
0.8  
1.2  
1.6  
2  
Drainsource voltage  
V
(V)  
Drain-source voltage  
V
(V)  
DS  
DS  
I
D
– V  
V
– V  
DS GS  
GS  
50  
40  
0.4  
0.3  
0.2  
0.1  
0
Common source  
= −10 V  
Common source  
Ta = 25°C  
Pulse test  
V
DS  
Pulse test  
30  
20  
10  
0
Ta = 100°C  
I
= −16A  
12  
D
55  
8  
25  
4  
0
1  
2  
3  
4  
0
4  
8  
16  
20  
Gatesource voltage  
V
(V)  
Gatesource voltage  
V
(V)  
GS  
GS  
R
– I  
D
DS (ON)  
100  
10  
1
Common source  
Ta = 25°C  
Pulse test  
V
= −4.5 V  
10  
GS  
0.1  
1  
10  
100  
Drain current  
I
(A)  
D
4
2009-11-20  
TPC8128  
R
Ta  
I
– V  
DS  
DS (ON)  
DR  
10  
8
100  
10  
1  
Common source  
Pulse test  
10  
4.5  
3  
I
= −4, 8, 16 A  
D
6
4
V
= −4.5 V  
GS  
I
= −4, 8, 16 A  
D
1  
V
= 0 V  
GS  
V
= −10 V  
GS  
2
0
Common source  
Ta = 25°C  
Pulse test  
0.1  
80  
40  
0
40  
80  
120  
160  
100  
160  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
Ambient temperature Ta (°C)  
Drainsource voltage  
V
(V)  
DS  
Capacitance – V  
V
Ta  
th  
DS  
10000  
1000  
100  
2  
C
iss  
1.6  
1.2  
0.8  
0.4  
0
C
C
oss  
rss  
Common source  
= −10 V  
DS  
= −0.5mA  
Common source  
= 0 V  
V
V
GS  
I
D
f = 1 MHz  
Ta = 25°C  
Pulse test  
0.1  
1  
10  
80  
40  
0
40  
80  
120  
160  
Drainsource voltage  
V
(V)  
Ambient temperature Ta (°C)  
DS  
Dynamic input/output  
characteristics  
P
Ta  
D
2
30  
30  
(1)Device mounted on a glass-epoxy  
board(a) (Note 2a)  
(2)Device mounted on a glass-epoxy  
board(b) (Note 2b)  
Common source  
= −16 A  
I
D
(1)  
Ta = 25°C  
Pulse test  
V
= 24 V  
DD  
25  
20  
15  
10  
5  
25  
20  
15  
10  
5  
1.6  
t = 10 s  
1.2  
0.8  
V
DS  
V
GS  
(2)  
12  
6  
6  
V
= 24 V  
DD  
12  
0.4  
0
0
0
0
40  
80  
120  
0
40  
80  
120  
160  
Ambient temperature Ta (°C)  
Total gate charge  
Q
g
(nC)  
5
2009-11-20  
TPC8128  
r
th  
t  
w
1000  
100  
10  
(1) Device mounted on a glass-epoxy board (a) (Note 2a)  
(2) Device mounted on a glass-epoxy board (b) (Note 2b)  
(2)  
(1)  
1
Single pulse  
0.1  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse width  
t
(s)  
w
Safe operating area  
100  
10  
I
max (Pulse) *  
D
1 ms *  
t = 10 ms *  
1  
*
Single pulse  
Ta = 25°C  
Curves must be derated  
linearly with increase in  
temperature.  
V
max  
DSS  
0.1  
0.1  
1  
10  
100  
Drainsource voltage  
V
(V)  
DS  
6
2009-11-20  
TPC8128  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the  
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of  
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes  
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the  
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their  
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such  
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,  
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating  
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR  
APPLICATIONS.  
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious  
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used  
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this  
document.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product  
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
7
2009-11-20  
配单直通车
TPC8128产品参数
型号:TPC8128
生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8
Reach Compliance Code:unknown
ECCN代码:EAR99
风险等级:8.3
配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V
最大漏极电流 (ID):16 A
最大漏源导通电阻:0.0069 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8
元件数量:1
端子数量:8
工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL
认证状态:Not Qualified
表面贴装:YES
端子形式:GULL WING
端子位置:DUAL
晶体管应用:SWITCHING
晶体管元件材料:SILICON
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