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产品型号TPS22966DPUR的概述

芯片TPS22966DPUR的概述 TPS22966DPUR是一款由德州仪器(Texas Instruments)公司设计的高性能负载开关。它主要用于电子产品中，以实现高效的功率管理和节能设计。该芯片的设计专注于自动化控制和可靠的电源分配，广泛应用于各种便携式和嵌入式设备中。TPS22966DPUR能够承受较高的输入电压并提供快速的开关响应，确保在动态负载条件下的稳定性。此芯片的一个显著特性是其内置的低电阻FET设计，能够有效地降低导通损耗，从而提升整体系统效率。此外，TPS22966DPUR还具备过流保护和欠压锁定功能，进一步增强了其安全性和可靠性。针对便携设备的设计显然优化了其静态电流消耗，确保设备在待机模式下也能保持较低的功耗。这些特性使其成为现代电子设计中不可或缺的元件之一。芯片TPS22966DPUR的详细参数电气特性 - 输入电压范围：1V至5.5V - 输出电流：最...

产品型号TPS22966DPUR的Datasheet PDF文件预览

TPS22966

www.ti.com

SLVSBH4A –JUNE 2012–REVISED JULY 2012

Dual Channel, Ultra-Low Resistance Load Switch

Check for Samples: TPS22966

FEATURES

DESCRIPTION

•

Integrated dual channel load switch

Input voltage range: 0.8V to 5.5V

Ultra low R_ONresistance

The TPS22966 is a small, ultra-low RON, dual

channel load switch with controlled turn on. The

device contains two N-channel MOSFETs that can

operate over an input voltage range of 0.8V to 5.5V

and can support a maximum continuous current of 6A

per channel. Each switch is independently controlled

by an on/off input (ON1 and ON2), which is capable

of interfacing directly with low-voltage control signals.

In TPS22966, a 220-Ω on-chip load resistor is added

for quick output discharge when switch is turned off.

–

R_ON= 18mΩ at V_IN= 5V (V_BIAS= 5V)

R_ON= 18mΩ at V_IN= 3.6V (V_BIAS= 5V)

R_ON= 18mΩ at V_IN= 1.8V (V_BIAS= 5V)

•

6A maximum continuous switch current per

channel

Low quiescent current

The TPS22966 is available in a small, space-saving

2mm x 3mm 14-SON package (DPU) with integrated

thermal pad allowing for high power dissipation. The

device is characterized for operation over the free-air

temperature range of –40°C to 85°C.

–

80µA (both channels)

60µA (single channel)

•

Low control input threshold enables use of

1.2-V/1.8-V/2.5-V/3.3-V logic

•

Configurable rise time

Table 1. Feature List

Quick Output Discharge (QOD)

SON 14-pin package with Thermal Pad

ESD performance tested per JESD 22

R_ONTYPICAL at 3.6 V (V_BIAS= 5V)

RISE TIME⁽¹⁾

18 mΩ

Adjustable

Yes

QUICK OUTPUT DISCHARGE⁽²⁾

–

2KV HBM and 1KV CDM

MAXIMUM OUTPUT CURRENT (per

channel)

6 A

APPLICATIONS

GPIO ENABLE

Active High

OPERATING TEMP

–40°C to 85°C

•

Ultrabook™

(1) See Application Information section for CT value vs. rise time.

Notebooks/Netbooks

Tablet PC

(2) This feature discharges output of the switch to GND through a

220-Ω resistor, preventing the output from floating.

Consumer electronics

Set-top boxes/Residental gateways

Telecom systems

Solid State Drives (SSD)

V_IN1

V_OUT1

Dual

Power

Supply

OFF

C_IN

ON1

C_L

R_L

CT1

CT2

GND

V_BIAS

Dual

DC/DC

converter

V_IN2

V_OUT2

OFF

C_IN

ON2

C_L

GND

TPS22966

GND

Figure 1. Typical Application

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

TPS22966

SLVSBH4A –JUNE 2012–REVISED JULY 2012

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION

T_A

PACKAGE

ORDERABLE PART NO.

TOP-SIDE MARKING/STATUS

-40°C to 85°C

DPU

Tape and reel 3000 units

Tape and reel 250 units

TPS22966DPUR

RB966

TPS22966DPUT

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾

VALUE

–0.3 to 6

UNIT⁽²⁾

V_IN1,2

V_OUT1,2

V_ON1,2

I_MAX

Input voltage range

Output voltage range

Input voltage range

Maximum continuous switch current

Maximum pulsed switch current, pulse <300 µs, 2% duty cycle

Operating free-air temperature range⁽³⁾

Maximum junction temperature

Storage temperature range

I_PLS

T_A

–40 to 85

125

°C

T_J

T_STG

T_LEAD

–65 to 150

300

Maximum lead temperature (10-s soldering time)

Human-Body Model (HBM)

2000

Electrostatic discharge

protection

ESD

Charged-Device Model (CDM)

1000

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

(3) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature [T_A(max)] is dependent on the maximum operating junction temperature [T_J(max)], the

maximum power dissipation of the device in the application [P_D(max)], and the junction-to-ambient thermal resistance of the part/package

in the application (θ_JA), as given by the following equation: TA_(max)= T_J(max)– (θ_JA× P_D(max)

)

THERMAL INFORMATION

TPS22966

THERMAL METRIC⁽¹⁾

UNITS

DPU (14 PINS)

θ_JA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

52.3

45.9

11.5

0.8

θ_JCtop

θ_JB

°C/W

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

ψ_JB

11.4

6.9

θ_JCbot

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

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SLVSBH4A –JUNE 2012–REVISED JULY 2012

RECOMMENDED OPERATING CONDITIONS

MIN

MAX UNIT

V_IN1,2

V_BIAS

V_ON1,2

V_OUT1,2

V_IH

Input voltage range

Bias voltage range

0.8 V_BIAS

2.5

5.5

V_IN

5.5

0.5

ON voltage range

Output voltage range

High-level input voltage, ON

Low-level input voltage, ON

Input capacitor

V_BIAS= 2.5 V to 5.5 V

1.2

V_IL

C_IN1,2

1⁽¹⁾

µF

(1) Refer to Application Information section.

ELECTRICAL CHARACTERISTICS

Unless otherwise note the specification in the following table applies over the operating ambient temperature –40°C ≤ T_A≤

85°C (full) and V_BIAS= 5.0 V. Typical values are for T_A= 25°C. (unless otherwise noted)

PARAMETER

TEST CONDITIONS

T_A

MIN TYP MAX UNIT

POWER SUPPLIES AND CURRENTS

I_OUT1= I_OUT2= 0,

V_IN1,2= V_ON1,2= V_BIAS= 5.0 V

V_BIASquiescent current (both

I_IN(VBIAS-ON)

channels)

Full

80 120

µA

I_OUT1= I_OUT2= 0, V_ON2= 0V

V_IN1,2= V_ON1= V_BIAS= 5.0 V

V_BIASquiescent current (single

I_IN(VBIAS-ON)

channel)

Full

µA

I_{IN(VBIAS-OFF)}V_BIASshutdown current

V_ON1,2= GND, V_OUT1,2= 0 V

V_IN1,2= 5.0 V

2.1

0.3

V_IN1,2= 3.3 V

V_IN1,2= 1.8 V

V_IN1,2= 0.8 V

V_ON1,2= GND,

V_OUT1,2= 0 V

V_IN1,2off-state supply current (per

I_IN(VIN-OFF)

channel)

Full

µA

0.07

0.04

I_ON

ON pin input leakage current

V_ON= 5.5 V

RESISTANCE CHARACTERISTICS

25°C

Full

V_IN= 5.0 V

V_IN= 3.3 V

V_IN= 1.8 V

V_IN= 1.5 V

V_IN= 1.2 V

V_IN= 0.8 V

mΩ

25°C

Full

25°C

Full

I_OUT= –200 mA,

V_BIAS= 5.0 V

R_ON

ON-state resistance

25°C

Full

25°C

Full

25°C

Full

mΩ

R_PD

Output pulldown resistance

V_IN= 5.0 V, V_ON= 0V, I_OUT= 15 mA

Full

220 300

Ω

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ELECTRICAL CHARACTERISTICS

Unless otherwise noted, the specification in the following table applies over the operating ambient temp –40°C ≤ T_A≤ 85°C

(full) and V_BIAS= 2.5 V. Typical values are for T_A= 25°C unless otherwise noted.

PARAMETER

TEST CONDITIONS

T_A

MIN TYP MAX UNIT

POWER SUPPLIES AND CURRENTS

I_OUT1= I_OUT2= 0,

V_IN1,2= V_ON1,2= V_BIAS= 2.5 V

V_BIASquiescent current (both

I_IN(VBIAS-ON)

channels)

Full

µA

I_OUT1= I_OUT2= 0, V_ON2= 0V

V_IN1,2= V_ON1= V_BIAS= 2.5 V

V_BIASquiescent current (single

I_IN(VBIAS-ON)

channel)

Full

µA

I_{IN(VBIAS-OFF)}V_BIASshutdown current

V_ON1,2= GND, V_OUT1,2= 0 V

V_IN1,2= 2.5 V

0.13

0.07

0.05

0.04

V_IN1,2= 1.8 V

V_IN1,2= 1.2 V

V_IN1,2= 0.8 V

V_ON1,2= GND,

V_OUT1,2= 0 V

V_IN1,2off-state supply current (per

I_IN(VIN-OFF)

channel)

Full

µA

I_ON

ON pin input leakage current

V_ON= 5.5 V

RESISTANCE CHARACTERISTICS

25°C

Full

V_IN= 2.5 V

V_IN= 1.8 V

V_IN= 1.5 V

V_IN= 1.2 V

V_IN= 0.8 V

mΩ

25°C

Full

25°C

Full

I_OUT= –200 mA,

V_BIAS= 2.5 V

R_ON

ON-state resistance

25°C

Full

25°C

Full

mΩ

R_PD

Output pulldown resistance

V_IN= 2.5 V, V_ON= 0V, I_OUT= 1 mA

Full

260 300

Ω

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SLVSBH4A –JUNE 2012–REVISED JULY 2012

SWITCHING CHARACTERISTIC MEASUREMENT INFORMATION

V_IN

V_OUT

C_IN= 1μF

(A)

C_L

R_L

OFF

V_BIAS

GND

TPS22966

GND

Single channel shown for clarity.

TEST CIRCUIT

V_ON

50%

t_f

t_OFF

t_r

t_ON

90%

V_OUT

50%

10%

t_D

t_ON/t_OFFWAVEFORMS

(A)Rise and fall times of the control signal is 100ns.

Figure 2. Test Circuit and t_ON/t_OFFWaveforms

SWITCHING CHARACTERISTICS

PARAMETER

TEST CONDITION

MIN

TYP

MAX UNIT

V_IN= V_ON= V_BIAS= 5 V, T_A= 25ºC (unless otherwise noted)

t_ON

t_OFF

t_R

Turn-on time

Turn-off time

V_OUTrise time

V_OUTfall time

ON delay time

R_L= 10-Ω, C_L= 0.1 µF, C_T= 1000 pF

1210

1370

µs

t_F

t_D

460

V_IN= 0.8 V, V_ON= V_BIAS= 5V, T_A= 25ºC (unless otherwise noted)

t_ON

t_OFF

t_R

Turn-on time

Turn-off time

V_OUTrise time

V_OUTfall time

ON delay time

R_L= 10-Ω, C_L= 0.1 µF, C_T= 1000 pF

550

170

325

µs

t_F

t_D

400

V_IN= 2.5V, V_ON= 5 V, V_BIAS= 2.5V, T_A= 25ºC (unless otherwise noted)

t_ON

t_OFF

t_R

Turn-on time

Turn-off time

V_OUTrise time

V_OUTfall time

ON delay time

R_L= 10-Ω, C_L= 0.1 µF, C_T= 1000 pF

2050

2275

2.5

t_F

t_D

990

V_IN= 0.8 V, V_ON= 5 V, V_BIAS= 2.5 V, T_A= 25ºC (unless otherwise noted)

t_ON

t_OFF

t_R

Turn-on time

Turn-off time

V_OUTrise time

V_OUTfall time

ON delay time

R_L= 10-Ω, C_L= 0.1 µF, C_T= 1000 pF

1300

130

875

t_F

t_D

870

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FUNCTIONAL BLOCK DIAGRAM

V_IN1

Control

ON1

Logic

CT1

V_BIAS

CT1

V_OUT1

GND

Charge Pump

V_OUT2

Control

Logic

ON2

V_IN2

Figure 3. Functional Block Diagram

Table 2. FUNCTIONAL TABLE

ONx

VINx to VOUTx

VOUTx to GND

Off

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SLVSBH4A –JUNE 2012–REVISED JULY 2012

DPU PACKAGE

VIN1

VOUT1

VIN1

VOUT1

GND

VBIAS

ON2

VBIAS

ON2

VIN2

VOUT2

Top View

Bottom View

PIN TABLE

TPS22966

PIN NAME

I/O

DESCRIPTION

DPU

VIN1

Switch #1 input. Bypass this input with a ceramic capacitor to GND. Recommended voltage range for

this pin for optimal R_ONperformance is 0.8V to V_BIAS

Switch #1 input. Bypass this input with a ceramic capacitor to GND. Recommended voltage range for

this pin for optimal R_ONperformance is 0.8V to V_BIAS

ON1

Active high switch #1 control input. Do not leave floating.

VBIAS

Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5V to 5.5V.

See Application Information section.

ON2

VIN2

Active high switch #2 control input. Do not leave floating.

Switch #2 input. Bypass this input with a ceramic capacitor to GND. Recommended voltage range for

this pin for optimal R_ONperformance is 0.8V to V_BIAS

VIN2

Switch #2 input. Bypass this input with a ceramic capacitor to GND. Recommended voltage range for

this pin for optimal R_ONperformance is 0.8V to V_BIAS

VOUT2

CT2

–

Switch #2 output.

Switch #2 slew rate control. Can be left floating.

Ground

GND

CT1

Switch #1 slew rate control. Can be left floating.

Switch #2 output.

VOUT1

Thermal Pad

Switch #2 output.

Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See Application

Information for layout guidelines.

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TYPICAL CHARACTERISTICS

V_BIASvs. QUIESCENT CURRENT

(BOTH CHANNELS)

V_BIASvs. QUIESCENT CURRENT

(SINGLE CHANNEL)

100

−40C

25C

85C

70C

−40C

25C

85C

70C

VIN1=VIN2=VBIAS, VON1=VON2=5V, VOUT=Open

SW1= On, SW2=On

VIN1=VIN2=VBIAS, VON1=VON2=5V, VOUT=Open

SW1 = Off, SW2 = On

2.5 2.75

3.25 3.5 3.75

4.25 4.5 4.75

5.25 5.5

2.5 2.75

3.25 3.5 3.75

4.25 4.5 4.75

5.25 5.5

VBIAS (V)

G069

V_BIASvs. SHUTDOWN CURRENT

(BOTH CHANNELS)

V_INvs. OFF-STATE SUPPLY CURRENT

(SINGLE CHANNEL)

1.2

2.5

−40C

25C

85C

70C

−40C

25C

85C

70C

VBIAS=5.5V, VON=0V, VOUT = 0V

0.8

0.6

0.4

0.2

1.5

0.5

VIN1=VIN2=VBIAS, VON1=VON2=0V, VOUT=0V

3.25 3.5 3.75 4.25 4.5 4.75 5.25 5.5

2.5 2.75

0.8 1.2 1.6

2.4 2.8 3.2 3.6

VIN (V)

4.4 4.8 5.2 5.6

VBIAS (V)

G070

G067

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SLVSBH4A –JUNE 2012–REVISED JULY 2012

TYPICAL CHARACTERISTICS (continued)

TEMPERATURE vs. R_ON

(V_BIAS= 2.5V, SINGLE CHANNEL)

(V_BIAS= 5.5V, SINGLE CHANNEL)

21.5

VIN =0.8V

VIN =1.05

VIN =1.2

VIN=1.5V

VIN = 1.8V

VIN = 2.5V

VIN =0.8V

VIN =1.05

VIN =1.2

VIN=1.5V

VIN = 1.8V

VIN = 2.5V

VIN = 3.3V

VIN =3.6V

VIN=4.2V

VIN=5V

20.5

19.5

18.5

VN=5.5V

17.5

16.5

15.5

14.5

VBIAS =2.5V, IOUT=−200mA

35 60 85

VBIAS =5.5V, IOUT=−200mA

35 60 85

−40

−15

−40

−15

Temperature (°C)

G063

G064

V_INvs. R_ON

(V_BIAS= 2.5V, SINGLE CHANNEL)

(V_BIAS= 5.5V, SINGLE CHANNEL)

−40C

85C

25C

70C

VBIAS =5.5V, IOUT = −200mA

−40C

85C

25C

70C

VBIAS =2.5V, IOUT = −200mA

1.8 2.05 2.3 2.5

0.8

1.05

1.3

1.55

VIN (V)

0.8 1.2 1.6

2.4 2.8 3.2 3.6

VIN (V)

4.4 4.8 5.2 5.6

G060

G061

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TYPICAL CHARACTERISTICS (continued)

V_INvs. R_ON

VIN vs. R_PD

(T_A= 25°C, SINGLE CHANNEL)

(V_BIAS= 5.5V, SINGLE CHANNEL)

22.5

216

212

208

204

200

Temperature=25C, IOUT=−200mA

VBIAS = 2.5V

IPD=1mA, VBIAS=5.5V, VON=0V

−40C

85C

25C

70C

VBIAS = 3.3V

VBIAS = 3.6V

VBIAS= 4.2V

VBIAS = 5V

21.5

VBIAS = 5.5V

20.5

19.5

18.5

17.5

0.8 1.2 1.6

2.4 2.8 3.2 3.6

VIN (V)

4.4 4.8 5.2 5.6

0.8 1.2 1.6

2.4 2.8 3.2 3.6

VIN (V)

4.4 4.8 5.2 5.6

G062

G065

V_ONvs. V_OUT

V_INvs. t_D

(T_A= 25°C, SINGLE CHANNEL)

(V_BIAS= 2.5V, CT = 1nF)

2.4

2.2

1300

1250

1200

1150

1100

1050

1000

950

VIN=2V, Tempeature = 25C

VBIAS = 2.5V

CT = 1nf

1.8

1.6

1.4

1.2

900

850

0.8

0.6

0.4

0.2

800

VBIAS = 2.5V

VBIAS=3.3V

VBIAS=3.6V

VBIAS=4.2

VBIAS=5V

750

−40C

25C

70C

85C

700

650

VBIAS=5.5V

600

0.25 0.5 0.75

1.25 1.5 1.75

VON (V)

2.25 2.5

0.8

1.2

1.4

1.6

1.8

2.2

2.4

2.6

VIN (V)

G066

G030

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TYPICAL CHARACTERISTICS (continued)

V_INvs. t_D

V_INvs. t_F

(V_BIAS= 5.5V, CT = 1nF)

(V_BIAS= 2.5V, CT = 1nF)

650

600

550

500

450

400

350

300

VBIAS = 5.5V, CT = 1nf

VBIAS = 2.5V

CT = 1nf

−40C

25C

70C

85C

−40C

25C

70C

85C

0.8

0.8 1.2 1.6

2.4 2.8 3.2 3.6

4.4 4.8 5.2 5.5

1.2

1.4

1.6

1.8

2.2

2.4

2.6

VIN (V)

G035

G036

V_INvs. t_F

(V_BIAS= 5.5V, CT = 1nF)

V_INvs. t_OFF

(V_BIAS= 2.5V, CT = 1nF)

160

150

140

130

120

110

100

VBIAS = 5.5V

CT = 1nf

−40C

25C

70C

85C

−40C

25C

70C

85C

VBIAS = 2.5V

CT = 1nf

0.8

0.8 1.2 1.6

2.4 2.8 3.2 3.6

VIN (V)

4.4 4.8 5.2 5.6

1.2

1.4

1.6

VIN (V)

1.8

2.2

2.4

2.6

G041

G042

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TYPICAL CHARACTERISTICS (continued)

V_INvs. t_OFF

V_INvs. t_ON

(V_BIAS= 5.5V, CT = 1nF)

(V_BIAS= 2.5V, CT = 1nF)

250

225

200

175

150

125

100

2500

2400

2300

2200

2100

2000

1900

1800

1700

1600

1500

1400

1300

1200

1100

VBIAS = 5.5V

CT = 1nf

−40C

25C

70C

85C

−40C

25C

70C

85C

VBIAS = 2.5V

CT = 1nf

0.8 1.2 1.6

2.4 2.8 3.2 3.6

VIN (V)

4.4 4.8 5.2 5.6

0.8

1.2

1.4

1.6

1.8

2.2 2.4

2.6

VIN (V)

G047

G048

V_INvs. t_ON

(V_BIAS= 5.5V, CT = 1nF)

V_INvs. t_R

(V_BIAS= 2.5V, CT = 1nF)

1600

1500

1400

1300

1200

1100

1000

900

2800

2450

2100

1750

1400

1050

700

−40C

25C

70C

85C

25C

70C

85C

800

700

600

VBIAS = 5.5V

CT = 1nf

VBIAS= 2.5V

CT = 1nf

500

400

0.8 1.2 1.6

2.4 2.8 3.2 3.6

VIN (V)

4.4 4.8 5.2 5.6

0.8

1.2

1.4

1.6

1.8

2.2 2.4

2.6

VIN (V)

G053

G061

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TPS22966

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SLVSBH4A –JUNE 2012–REVISED JULY 2012

TYPICAL CHARACTERISTICS (continued)

V_INvs. t_R

V_BIASvs. t_R

(V_BIAS= 5.5V, CT = 1nF)

(V_IN= 2.5V, CT = 1nF)

2000

1750

1500

1250

1000

750

3000

2750

2500

2250

2000

1750

1500

1250

1000

750

−40C

25C

70C

85C

−40C

25C

70C

85C

500

VBIAS = 5.5V

CT = 1nf

VIN = 2.5V

CT = 1nf

250

500

0.8 1.2 1.6

2.4 2.8 3.2 3.6

VIN (V)

4.4 4.8 5.2 5.6

2.5 2.8

3.2 3.5 3.8

4.2 4.5 4.8

5.2 5.5

VBIAS (V)

G059

G061

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SLVSBH4A –JUNE 2012–REVISED JULY 2012

www.ti.com

TYPICAL AC SCOPE CAPTURES @ T_A= 25ºC, CT = 1nF

TURN-ON RESPONSE TIME

(V_IN= 0.8V, V_BIAS= 2.5V, C_IN= 1µF, C_L= 0.1µF, R_L= 10Ω)

(V_IN= 0.8V, V_BIAS= 5.0V, C_IN= 1µF, C_L= 0.1µF, R_L= 10Ω)

TURN-ON RESPONSE TIME

(V_IN= 2.5V, V_BIAS= 2.5V, C_IN= 1µF, C_L= 0.1µF, R_L= 10Ω)

(V_IN= 5.0V, V_BIAS= 5.0V, C_IN= 1µF, C_L= 0.1µF, R_L= 10Ω)

TURN-OFF RESPONSE TIME

(V_IN= 0.8V, V_BIAS= 2.5V, C_IN= 1µF, C_L= 0.1µF, R_L= 10Ω)

(V_IN= 0.8V, V_BIAS= 5.0V, C_IN= 1µF, C_L= 0.1µF, R_L= 10Ω)

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SLVSBH4A –JUNE 2012–REVISED JULY 2012

TYPICAL AC SCOPE CAPTURES @ T_A= 25ºC, CT = 1nF (continued)

TURN-OFF RESPONSE TIME

(V_IN= 2.5V, V_BIAS= 2.5V, C_IN= 1µF, C_L= 0.1µF, R_L= 10Ω)

(V_IN= 5.0V, V_BIAS= 5.0V, C_IN= 1µF, C_L= 0.1µF, R_L= 10Ω)

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TPS22966

SLVSBH4A –JUNE 2012–REVISED JULY 2012

www.ti.com

APPLICATION INFORMATION

ON/OFF CONTROL

The ON pins control the state of the switch. Asserting ON high enables the switch. ON is active high and has a

low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard

GPIO logic threshold. It can be used with any microcontroller with 1.2-V or higher GPIO voltage. This pin cannot

be left floating and must be tied either high or low for proper functionality.

INPUT CAPACITOR (OPTIONAL)

To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a

discharged load capacitor or short-circuit, a capacitor needs to be placed between V_INand GND. A 1-µF ceramic

capacitor, C_IN, placed close to the pins, is usually sufficient. Higher values of C_INcan be used to further reduce

the voltage drop during high-current application. When switching heavy loads, it is recommended to have an

input capacitor about 10 times higher than the output capacitor to avoid excessive voltage drop.

OUTPUT CAPACITOR (OPTIONAL)

Due to the integrated body diode in the NMOS switch, a C_INgreater than C_Lis highly recommended. A C_L

greater than C_INcan cause V_OUTto exceed V_INwhen the system supply is removed. This could result in current

flow through the body diode from V_OUTto V_IN. A C_INto C_Lratio of 10 to 1 is recommended for minimizing V_INdip

caused by inrush currents during startup.

V_INand V_BIASVOLTAGE RANGE

For optimal R_ONperformance, make sure V_IN≤ V_BIAS. The device will still be functional if V_IN> V_BIASbut it will

exhibit R_ONgreater than what is listed in the ELECTRICAL CHARACTERISTICS table. See Figure 4 for an

example of a typical device. Notice the increasing R_ONas V_INexceeds V_BIASvoltage. Be sure to never exceed

the maximum voltage rating for V_INand V_BIAS

VBIAS = 2.5V

VBIAS = 3.3V

VBIAS = 3.6V

VBIAS= 4.2V

VBIAS = 5V

VBIAS = 5.5V

Temperature=25C, IOUT=−200mA

0.8 1.2 1.6

2.4 2.8 3.2 3.6

VIN (V)

4.4 4.8 5.2 5.6

G062

Figure 4. R_ONvs. V_IN(V_IN> V_BIAS, Single Channel)

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TPS22966

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SLVSBH4A –JUNE 2012–REVISED JULY 2012

ADJUSTABLE RISE TIME

A capacitor to GND on the CT pins sets the slew rate for each channel. An approximate formula for the

relationship between CT and slew rate is (the equation below accounts for 10% to 90% measurement on V_OUT

and does NOT apply for CT = 0pF. Use table below to determine rise times for when CT = 0pF):

SR = 0.32´CT +13.7

(1)

Where,

SR = slew rate (in µs/V)

CT = the capacitance value on the CT pin (in pF)

The units for the constant 13.7 is in µs/V.

Rise time can be calculated by multiplying the input voltage by the slew rate. The table below contains rise time

values measured on a typical device. Rise times shown below are only valid for the power-up sequence where

V_INand V_BIASare already in steady state condition, and the ON pin is asserted high.

RISE TIME (µs) 10% - 90%, C_L= 0.1µF, C_IN= 1µF, R_L= 10Ω

TYPICAL VALUES at 25°C, 25V X7R 10% CERAMIC CAP

CTx (pF)

124

3.3V

1.8V

1.5V

1.2V

1.05V

0.8V

220

481

323

193

166

143

251

469

893

1920

4230

133

109

175

342

650

1411

3033

470

855

603

348

299

228

1000

2200

4700

10000

1724

3328

7459

16059

1185

2240

4950

10835

670

570

411

1308

2820

6040

1088

2429

5055

808

1748

3770

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Product Folder Link(s): TPS22966

TPS22966

SLVSBH4A –JUNE 2012–REVISED JULY 2012

www.ti.com

BOARD LAYOUT AND THERMAL CONSIDERATIONS

For best performance, all traces should be as short as possible. To be most effective, the input and output

capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have

on normal operation. Using wide traces for V_IN, V_OUT, and GND helps minimize the parasitic electrical effects

along with minimizing the case to ambient thermal impedance.

The maximum IC junction temperature should be restricted to 125°C under normal operating conditions. To

calculate the maximum allowable dissipation, P_D(max)for a given output current and ambient temperature, use the

following equation:

_J(max)- T_A

D(max)

Q_JA

(2)

Where:

P_D(max)= maximum allowable power dissipation

T_J(max)= maximum allowable junction temperature (125°C for the TPS22966)

T_A= ambient temperature of the device

Θ_JA= junction to air thermal impedance. See Thermal Information section. This parameter is highly

dependent upon board layout.

The figure below shows an example of a layout. Notice the thermal vias located under the exposed thermal pad

of the device. This allows for thermal diffusion away from the device.

VOUT1 capacitor

VIN1 capacitor

CT1 capacitor

Thermal

relief vias

VIN2 capacitor

CT2 capacitor

VOUT2 capacitor

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TPS22966

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SLVSBH4A –JUNE 2012–REVISED JULY 2012

REVISION HISTORY

Changes from Original (June 2012) to Revision A

Page

•

Updated V_BIASvs. QUIESCENT CURRENT (BOTH CHANNELS) Y-axis Units. .................................................................. 8

Updated V_BIASvs. QUIESCENT CURRENT (SINGLE CHANNEL) Y-axis Units. ................................................................. 8

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Product Folder Link(s): TPS22966

PACKAGE OPTION ADDENDUM

www.ti.com

9-Jul-2012

PACKAGING INFORMATION

Status ⁽¹⁾

Eco Plan ⁽²⁾

MSL Peak Temp ⁽³⁾

Samples

Orderable Device

Package Type Package

Drawing

Pins

Package Qty

Lead/

Ball Finish

(Requires Login)

TPS22966DPUR

TPS22966DPUT

ACTIVE

WSON

DPU

3000

250

Green (RoHS

& no Sb/Br)

CU NIPDAU Level-2-260C-1 YEAR

Green (RoHS

& no Sb/Br)

CU NIPDAU Level-2-260C-1 YEAR

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between

the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight

in homogeneous material)

⁽³⁾MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

10-Jul-2012

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

TPS22966DPUR

TPS22966DPUT

WSON

DPU

3000

250

180.0

8.4

2.25

3.25

1.05

4.0

8.0

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

10-Jul-2012

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

TPS22966DPUR

TPS22966DPUT

WSON

DPU

3000

250

210.0

185.0

35.0

Pack Materials-Page 2

IMPORTANT NOTICE

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other

changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should

obtain the latest relevant information before placing orders and should verify that such information is current and complete. All

semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time

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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms

and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary

to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily

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TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and

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TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or

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TPS22966DPUR产品参数

型号:	TPS22966DPUR
Brand Name：	Texas Instruments
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	HVSON,
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
Factory Lead Time：	12 weeks
风险等级：	0.77
其他特性：	ALSO OPERATES IN NOMINAL SUPPLY VOLTAGE OF 1.5, 1.8, 3.3, 5 VOLTS
可调阈值：	NO
模拟集成电路 - 其他类型：	POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码：	R-PDSO-N14
JESD-609代码：	e4
长度：	3 mm
湿度敏感等级：	2
信道数量：	2
功能数量：	1
端子数量：	14
最高工作温度：	105 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	HVSON
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）：	260
座面最大高度：	0.8 mm
最大供电电流 (Isup)：	0.12 mA
最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	0.8 V
标称供电电压 (Vsup)：	1.2 V
表面贴装：	YES
温度等级：	INDUSTRIAL
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	NO LEAD
端子节距：	0.4 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	2 mm
Base Number Matches：	1

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