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  • TPS5430DDAR图
  • 深圳市煜辉煌电子有限公司

     该会员已使用本站8年以上
  • TPS5430DDAR 现货库存
  • 数量118966 
  • 厂家TI/无敌价格 
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  • TPS5430图
  • 集好芯城

     该会员已使用本站13年以上
  • TPS5430 现货库存
  • 数量16465 
  • 厂家TI(德州仪器) 
  • 封装 
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  • 深圳市英德州科技有限公司

     该会员已使用本站2年以上
  • TPS54302DDCR 现货库存
  • 数量32500 
  • 厂家TI(德州仪器) 
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  • 深圳市广百利电子有限公司

     该会员已使用本站6年以上
  • TPS54302DDCR 现货库存
  • 数量18500 
  • 厂家TI(德州仪器) 
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  • 深圳市和诚半导体有限公司

     该会员已使用本站11年以上
  • TPS5430DDAR 现货库存
  • 数量600 
  • 厂家TI 
  • 封装N/A 
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  • ?100%深圳原装现货库存
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  • TPS54308DDCR图
  • 深圳市创德丰电子有限公司

     该会员已使用本站15年以上
  • TPS54308DDCR 现货库存
  • 数量1350 
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  • 齐创科技(上海北京青岛)有限公司

     该会员已使用本站14年以上
  • TPS5430DDAR【特价现货】 现货库存
  • 数量7000 
  • 厂家TI代理 
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  • 批号24+热销 
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  • TPS5430DDA图
  • 深圳市欧立现代科技有限公司

     该会员已使用本站12年以上
  • TPS5430DDA 现货库存
  • 数量6120 
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  • 深圳市珩瑞科技有限公司

     该会员已使用本站2年以上
  • TPS5430DDAR 现货库存
  • 数量9122 
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  • 深圳市宏捷佳电子科技有限公司

     该会员已使用本站6年以上
  • TPS54302DDCR 现货库存
  • 数量5300 
  • 厂家TI 
  • 封装SOT23-6 
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  • 深圳市勤思达科技有限公司

     该会员已使用本站14年以上
  • TPS5430DDAR 现货库存
  • 数量14350 
  • 厂家TI/德州仪器 
  • 封装SOP-8 
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  • 深圳市拓亿芯电子有限公司

     该会员已使用本站12年以上
  • TPS54302DDCR 现货库存
  • 数量21000 
  • 厂家TI/德州仪器 
  • 封装SOT23-6 
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  • 深圳市赛尔通科技有限公司

     该会员已使用本站12年以上
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  • TPS54302DDCR图
  • 深圳市芳益电子科技有限公司

     该会员已使用本站10年以上
  • TPS54302DDCR 现货库存
  • 数量3000 
  • 厂家TI 
  • 封装SOT23-6 
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  • 0755-13631573466 QQ:498361569QQ:389337416
  • TPS5430图
  • 深圳市宗天技术开发有限公司

     该会员已使用本站10年以上
  • TPS5430 现货库存
  • 数量8000 
  • 厂家TI(德州仪器) 
  • 封装N/A 
  • 批号22+ 
  • 宗天技术 原装现货/假一赔十
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  • 深圳市高捷芯城科技有限公司

     该会员已使用本站11年以上
  • TPS54308DDCT 现货库存
  • 数量5239 
  • 厂家TI(德州仪器) 
  • 封装SOT-23-6 
  • 批号23+ 
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  • TPS54302DDCT图
  • 深圳市拓亿芯电子有限公司

     该会员已使用本站12年以上
  • TPS54302DDCT 现货库存
  • 数量22000 
  • 厂家TI/德州仪器 
  • 封装TSOT-23-6 
  • 批号23+ 
  • 只做原装现货假一罚十
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  • TPS5430DDAR图
  • 深圳市晶美隆科技有限公司

     该会员已使用本站14年以上
  • TPS5430DDAR 现货库存
  • 数量17007 
  • 厂家TI/德州仪器 
  • 封装SOP8 
  • 批号23+ 
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  • 0755-83209630 QQ:2885348317QQ:2885348339
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  • 深圳市宏世佳电子科技有限公司

     该会员已使用本站13年以上
  • TPS5430DDAR 现货库存
  • 数量3168 
  • 厂家TI 
  • 封装SOP 
  • 批号2023+ 
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  • 0755-82556029 QQ:2881894392QQ:2881894393
  • TPS5430DDARG4图
  • 上海意淼电子科技有限公司

     该会员已使用本站14年以上
  • TPS5430DDARG4 现货库存
  • 数量20000 
  • 厂家TI 
  • 封装SOP-8 
  • 批号23+ 
  • 原装现货热卖!请联系吴先生 13681678667
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  • TPS54308DDCR图
  • 深圳市恒达亿科技有限公司

     该会员已使用本站12年以上
  • TPS54308DDCR 现货库存
  • 数量5000 
  • 厂家TI 
  • 封装SOT23-6 
  • 批号23+ 
  • 全新原装,欢迎查询
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  • TPS54302DDCR图
  • 深圳市恒达亿科技有限公司

     该会员已使用本站16年以上
  • TPS54302DDCR 现货库存
  • 数量8529 
  • 厂家TI 
  • 封装SOT23-6 
  • 批号24+ 
  • 只做原装正品现货销售
  • QQ:867789136QQ:867789136 复制
    QQ:1245773710QQ:1245773710 复制
  • 0755-82723761 QQ:867789136QQ:1245773710
  • TPS54308DDCR图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • TPS54308DDCR 现货库存
  • 数量3000 
  • 厂家TI 
  • 封装SOT23-6 
  • 批号新年份 
  • 新到现货、一手货源、当天发货、bom配单
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  • 0755-84507451 QQ:1435424310
  • TPS54308DDCR图
  • 深圳市恒意法科技有限公司

     该会员已使用本站17年以上
  • TPS54308DDCR 现货库存
  • 数量21000 
  • 厂家TI/德州仪器 
  • 封装SOT23-6 
  • 批号21+ 
  • 专营原装正品现货,当天发货,可开发票!
  • QQ:2881514372QQ:2881514372 复制
  • 0755-83247729 QQ:2881514372
  • TPS5430DDA图
  • 深圳市恒嘉威智能科技有限公司

     该会员已使用本站7年以上
  • TPS5430DDA 现货库存
  • 数量14324 
  • 厂家TI/德州仪器 
  • 封装SOP-8 
  • 批号21+ 
  • 原装恒嘉威价格最实在
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    QQ:2274045202QQ:2274045202 复制
  • -0755-23942980 QQ:1036846627QQ:2274045202
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  • 深圳市勤思达科技有限公司

     该会员已使用本站14年以上
  • TPS54302DDCR 现货库存
  • 数量6000 
  • 厂家TI/德州仪器 
  • 封装NA 
  • 批号2021+ 
  • ▉十二年专注▉ 100%全新原装正品 正规渠道订货 长期现货供应
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  • 0755-83268779 QQ:2881910282QQ:2881239443
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  • 深圳市凯睿晟科技有限公司

     该会员已使用本站10年以上
  • TPS54302DDCR 现货库存
  • 数量12000 
  • 厂家TI(德州仪器) 
  • 封装TSOT-23-6 
  • 批号两年内 
  • 只做全新原装正品 实单可谈
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  • 0755-23616725 QQ:2885648621
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  • 深圳市金和信科技有限公司(原金合讯)

     该会员已使用本站14年以上
  • TPS54302DDCR 现货库存
  • 数量3000 
  • 厂家SOT23-6 
  • 封装2303+ 
  • 批号TI/德州仪器 
  • 不上现货排名,有价格优势,照样拿单,上具体批次,只做原装,放心来问,15年芯片销售经验
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  • 755-36853282 QQ:714451819QQ:2880443025
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  • 深圳市亿智腾科技有限公司

     该会员已使用本站8年以上
  • TPS5430DDA 现货库存
  • 数量8860 
  • 厂家TEXASINSTRUMENTS 
  • 封装N/A 
  • 批号16+ 
  • 全新原装现货★★特价供应★★。★★特价★★假一赔十,工厂客户可放款
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  • 深圳市昌和盛利电子有限公司

     该会员已使用本站11年以上
  • TPS54302DDCR 现货库存
  • 数量30000 
  • 厂家TI【原装正品】 
  • 封装SOT23-6 
  • 批号▊ NEW ▊ 
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  • 深圳市嘉胜威科技有限公司

     该会员已使用本站7年以上
  • TPS54302DDCR 现货库存
  • 数量11990 
  • 厂家TI 
  • 封装SOT23 
  • 批号22+ 
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  • 深圳市欧昇科技有限公司

     该会员已使用本站2年以上
  • TPS54302DDCR 现货库存
  • 数量500 
  • 厂家TI? 德州仪器 
  • 封装N/A 
  • 批号21+ 
  • 深圳现货,当天可发,真实库存
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  • TPS5430DDAR图
  • 深圳市宏捷佳电子科技有限公司

     该会员已使用本站12年以上
  • TPS5430DDAR 现货库存
  • 数量50600 
  • 厂家TI/德州仪器 
  • 封装SOP-8 
  • 批号2103+ 
  • 原装价格当天为准可含票
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  • 深圳市芯鹏泰科技有限公司

     该会员已使用本站8年以上
  • TPS54302DDCR 现货库存
  • 数量6538 
  • 厂家TI/德州仪器 
  • 封装SOT23-6 
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  • HECC GROUP CO.,LIMITED

     该会员已使用本站17年以上
  • TPS5430DDAR 现货库存
  • 数量100000 
  • 厂家TI 
  • 封装sop8 
  • 批号24+ 
  • 原装假一赔十,现货
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  • 深圳市特拉特科技有限公司

     该会员已使用本站2年以上
  • TPS5430DDAR 现货库存
  • 数量15000 
  • 厂家TI 
  • 封装SOP-8 
  • 批号22+ 
  • 原厂指定分销商,有意请来电或QQ洽谈
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产品型号TPS5430的概述

芯片 TPS5430 的概述 TPS5430 是德州仪器(Texas Instruments, TI)推出的一款高性能的开关模式稳压器(Buck Converter),其设计目的是为各种应用提供高效率和较低的噪声输出。该芯片最大输入电压可达到28V,适合工业、通信设备和电源管理等多种领域。TPS5430 的输出电压可调,通过外部电阻网络可以轻松实现设定,最大输出电流可达3A,这使得它在多种电源设计中表现出优异的适应性。 TPS5430具有内部补偿功能,能够简化电路设计和减少外部元件数量。其工作频率通常为200kHz,能够在一定负载范围内保持高效率,同时具有较宽的工作温度范围,适合于各种工作环境。 芯片 TPS5430 的详细参数 TPS5430 的详细技术规格包括但不限于以下几个关键参数: - 输入电压范围:4.5V 至 28V - 输出电压范围:0.8V 至 5.5V(可调) - 输...

产品型号TPS5430的Datasheet PDF文件预览

TPS54377  
www.ti.com  
SLVS779SEPTEMBER 2007  
1.6 MHz, 3-V TO 6-V INPUT, 3-A SYNCHRONOUS STEP-DOWN SWIFT™ CONVERTER  
WITH DISABLED SINKING DURING START-UP  
1
FEATURES  
DESCRIPTION  
2
60-mMOSFET Switches for High Efficiency  
at 3-A Continuous Output Current  
As a member of the SWIFT™ family of dc/dc  
regulators, the TPS54377 low-input-voltage  
high-output-current synchronous-buck PWM  
Adjustable Output Voltage Down to 0.9 V With  
1% Accuracy  
converter integrates all required active components.  
Included on the substrate with the listed features are  
a true, high performance, voltage error amplifier that  
provides high performance under transient conditions;  
an undervoltage-lockout circuit to prevent start-up  
until the input voltage reaches 3 V; an internally and  
externally set slow-start circuit to limit in-rush  
Switching Frequency: Adjustable From  
280 kHz to 1600 kHz  
Disabled Current Sinking During Start-Up  
Fast Transient Response  
Load Protected by Peak Current Limit and  
Thermal Shutdown  
currents; and  
a power good output useful for  
Integrated Solution Reduces Board Area and  
Total Cost  
processor/logic reset, fault signaling, and supply  
sequencing.  
Spacing Saving 4mm x 5mm QFN Packaging  
For reliable power up in output precharge  
applications, the TPS54377 is designed to only  
source current during start-up.  
For SWIFT Documentation, Application Notes,  
and Design Software, see the TI website at  
www.ti.com/swift  
The TPS54377 device is available in a thermally  
enhanced 24-pin QFN (RHF) PowerPAD™ package,  
which eliminates bulky heatsinks. TI provides  
evaluation modules and the SWIFT designer software  
tool to aid in achieving high-performance power  
supply designs to meet aggressive equipment  
development cycles.  
APPLICATIONS  
Low-Voltage, High-Density Systems With  
Power Distributed at 5 V or 3.3 V  
Point of Load Regulation for High  
Performance DSPs, FPGAs, ASICs, and  
Microprocessors  
Broadband, Networking and Optical  
Communications Infrastructure  
START-UP WAVEFORM  
Simplified Schematic  
*
*
R
L
= 1  
Input  
Output  
TPS54377  
VIN  
PH  
PWRGD  
SS/ENA  
SYNC  
RT  
BOOT  
PGND  
V = 3.3 V  
I
VSENSE  
VBIAS  
AGND COMP  
V
= 1.8 V  
O
5.0 ms/div  
* Optional  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
SWIFT, PowerPAD are trademarks of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007, Texas Instruments Incorporated  
TPS54377  
www.ti.com  
SLVS779SEPTEMBER 2007  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ORDERING INFORMATION  
TJ  
OUTPUT VOLTAGE  
PACKAGE  
PART NUMBER  
–40°C to 125°C  
Adjustable Down to 0.9 V  
QFN (RHF)(1)(2)  
TPS54377RHF  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
website at www.ti.com.  
(2) The RHF package is available in two different tape and reel quantities. Add an R suffix to the device type (i.e. TPS54377RHFR) for a  
3000 piece reel and add a T suffix (TPS54377RHFT) for a 250 piece reel.  
ABSOLUTE MAXIMUM RATINGS  
over operating free-air temperature range (unless otherwise noted)(1)  
VALUE  
–0.3 to 7  
–0.3 to 6  
–0.3 to 4  
–0.3 to 17  
–0.3 to 7  
–0.6 to 10  
–2 to 10  
UNIT  
V
VIN, SS/ENA, SYNC  
RT  
V
VI  
Input voltage range  
VSENSE  
V
BOOT  
V
VBIAS, PWRGD, COMP  
PH (steady state)  
PH (transient < 20 ns)  
PH  
V
VO  
Output voltage range  
Output current range  
Sink current  
V
V
Internally Limited  
IO  
COMP, VBIAS  
PH  
6
6
mA  
A
COMP  
6
mA  
mA  
V
SS/ENA, PWRGD  
AGND to PGND  
10  
±0.3  
Voltage differential  
Continuous power dissipation  
See Power Dissipation Rating Table  
TJ  
Operating virtual junction temperature range  
Storage temperature  
–40 to 150  
–65 to 150  
°C  
°C  
Tstg  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
RECOMMENDED OPERATING CONDITIONS  
MIN  
3
NOM  
MAX  
6
UNIT  
V
VI  
Input voltage range  
TJ  
Operating junction temperature  
–40  
125  
°C  
2
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SLVS779SEPTEMBER 2007  
PACKAGE DISSIPATION RATINGS(1) (2)  
PACKAGE  
THERMAL IMPEDANCE  
JUNCTION-TO-AMBIENT  
THERMAL IMPEDANCE  
JUNCTION-TO-CASE  
24-Pin RHF with solder  
19.7°C/W  
1.7°C/W  
(1) Maximum power dissipation may be limited by overcurrent protection.  
(2) Test board conditions:  
a. 3 inch x 3 inch, 4 layers, thickness: 0.062 inch  
b. 2 oz. copper traces located on the top of the PCB  
c. 2 oz. copper ground plane on the bottom of the PCB  
d. 2 oz. copper ground planes on the 2 internal layers  
e. 6 thermal vias (see the Recommended land pattern, Figure 12)  
ELECTRICAL CHARACTERISTICS  
TJ = –40°C to 125°C, VI = 3 V to 6 V (unless otherwise noted)  
PARAMETER  
SUPPLY VOLTAGE, VIN  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
VI  
Input voltage range, VIN  
3
6
V
fs = 350 kHz, SYNC = 0.8 V, RT open  
6.2  
8.4  
1
9.6  
fs = 550 kHz, SYNC 2.5 V, RT open,  
phase pin open  
Quiescent current  
12.8  
1.4  
mA  
Shutdown, SS/ENA = 0 V  
UNDERVOLTAGE LOCK OUT  
Start threshold voltage, UVLO  
2.95  
2.8  
3
V
Stop threshold voltage, UVLO  
Hysteresis voltage, UVLO  
2.7  
0.14  
0.16  
V
Rising and falling edge deglitch,  
UVLO(1)  
2.5  
µs  
BIAS VOLTAGE  
Output voltage, VBIAS  
Output current, VBIAS  
I(VBIAS) = 0  
2.7  
2.8  
2.9  
V
VO  
(2)  
100  
µA  
CUMULATIVE REFERENCE  
Vref Accuracy  
REGULATION  
Line regulation(1) (3)  
Load regulation(1) (3)  
OSCILLATOR  
0.882  
0.891 0.900  
V
IL = 1.5 A, fs = 1.1 MHz, TJ = 25°C  
0.04  
0.09  
%/V  
%/A  
IL = 0 A to 3 A, fs = 1.1 MHz, TJ = 25°C  
SYNC 0.8 V, RT open  
280  
440  
460  
995  
2.5  
350  
550  
420  
660  
Internally set free-running frequency  
range  
kHz  
kHz  
SYNC 2.5 V, RT open  
RT = 100 k(1% resistor to AGND)  
RT = 43 k(1% resistor to AGND)  
500  
540  
Externally set free-running frequency  
range  
1075  
1155  
High-level threshold voltage, SYNC  
Low-level threshold voltage, SYNC  
Pulse duration, SYNC(1)  
V
V
0.8  
50  
ns  
kHz  
V
Frequency range, SYNC  
Ramp valley(1)  
Ramp amplitude (peak-to-peak)(1)  
Minimum controllable on time  
Maximum duty cycle  
330  
1600  
0.75  
1
V
150  
ns  
90%  
(1) Specified by design  
(2) Static resistive loads only  
(3) Specified by the circuit used in Figure 10.  
Copyright © 2007, Texas Instruments Incorporated  
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ELECTRICAL CHARACTERISTICS (continued)  
TJ = –40°C to 125°C, VI = 3 V to 6 V (unless otherwise noted)  
PARAMETER  
ERROR AMPLIFIER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Error amplifier open loop voltage gain  
Error amplifier unity gain bandwidth  
1 kCOMP to AGND(4)  
Parallel 10 k, 160 pF COMP to AGND(4)  
90  
3
110  
5
dB  
MHz  
Error amplifier common-mode input  
voltage range  
Powered by internal LDO(4)  
VSENSE = Vref  
0
VBIAS  
250  
V
IIB  
Input bias current, VSENSE  
60  
nA  
Output voltage slew rate (symmetric),  
COMP  
VO  
1
1.4  
V/µs  
PWM COMPARATOR  
PWM comparator propagation delay  
time, PWM comparator input to PH pin  
(excluding dead time)  
10 mV overdrive(4)  
70  
85  
ns  
SLOW-START/ENABLE  
Enable threshold voltage, SS/ENA  
Enable hysteresis voltage, SS/ENA  
0.82  
1.2  
0.03  
2.5  
3.35  
5
1.4  
V
V
(4)  
(4)  
Falling edge deglitch, SS/ENA  
µs  
ms  
µA  
mA  
Internal slow-start time  
Charge current, SS/ENA  
Discharge current, SS/ENA  
2.6  
3
4.1  
8
SS/ENA = 0 V  
SS/ENA = 0.2 V, VI = 2.7 V  
1.3  
2.3  
4
POWER GOOD  
Power good threshold voltage  
Power good hysteresis voltage  
VSENSE falling  
90  
3
%Vref  
%Vref  
µs  
(4)  
(4)  
Power good falling edge deglitch  
35  
Output saturation voltage, PWRGD  
Leakage current, PWRGD  
I(sink) = 2.5 mA  
VI = 5.5 V  
0.18  
0.3  
1
V
µA  
CURRENT LIMIT  
(4)  
VI = 3 V, output shorted  
4
6.5  
7.5  
Current limit trip point  
A
(4)  
VI = 6 V, output shorted  
4.5  
Current limit leading edge blanking  
time(4)  
100  
200  
ns  
ns  
(4)  
Current limit total response time  
THERMAL SHUTDOWN  
Thermal shutdown trip point  
Thermal shutdown hysteresis  
OUTPUT POWER MOSFETS  
(4)  
(4)  
135  
150  
10  
165  
°C  
°C  
VI = 6 V  
VI = 3 V  
59  
85  
88  
mΩ  
rDS(on)  
Power MOSFET switches  
136  
(4) Specified by design  
4
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TPS54377  
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SLVS779SEPTEMBER 2007  
PIN ASSIGNMENTS  
RHF PACKAGE  
(BOTTOM VIEW)  
6
1
2
3
4
5
7
24  
23  
22  
21  
20  
8
PH  
VSNS  
AGND  
9
PH  
NC  
Exposed  
Thermal Pad  
(Pin 25)  
10  
RT  
NC  
11  
12  
PGND  
PGND  
SYNC  
19 18  
17 16 15 14  
13  
TERMINAL FUNCTIONS  
TERMINAL  
DESCRIPTION  
NAME  
NO.  
COMP  
1
Error amplifier output. Connect compensation network from COMP to VSENSE.  
Power good open drain output. High when VSENSE 90% Vref, otherwise PWRGD is low. Note that output is low  
when SS/ENA is low or internal shutdown signal active.  
PWRGD  
2
Bootstrap input. 0.022-μF to 0.1-μF low-ESR capacitor connected from BOOT to PH generates floating drive for the  
high-side FET driver.  
BOOT  
PH  
3
4-9  
Phase input/output. Junction of the internal high and low-side power MOSFETs, and output inductor.  
Power ground. High current return for the low-side driver and power MOSFET. Connect PGND with large copper  
areas to the input and output supply returns, and negative terminals of the input and output capacitors.  
PGND  
11-14  
Input supply for the power MOSFET switches and internal bias regulator. Bypass VIN pins to PGND pins close to  
device package with a high quality, low ESR 1-μF to 10-μF ceramic capacitor.  
VIN  
15-17  
18  
Internal bias regulator output. Supplies regulated voltage to internal circuitry. Bypass VBIAS pin to AGND pin with a  
high quality, low ESR 0.1-μF to 1.0-μF ceramic capacitor.  
VBIAS  
SS/ENA  
Slow-start/enable input/output. Dual function pin which provides logic input to enable/disable device operation and  
capacitor input to externally set the start-up time.  
19  
Synchronization input. Dual function pin which provides logic input to synchronize to an external oscillator or pin  
select between two internally set switching frequencies. When used to synchronize to an external signal, a resistor  
must be connected to the RT pin.  
SYNC  
20  
RT  
22  
23, 25  
24  
Frequency setting resistor input. Connect a resistor from RT to AGND to set the switching frequency, fs.  
Analog ground. Return for compensation network/output divider, slow-start capacitor, VBIAS capacitor, RT resistor  
and SYNC pin. Make PowerPAD connection to AGND.  
AGND  
VSNS  
NC  
Error amplifier inverting input.  
10, 21 Not connected internally.  
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SLVS779SEPTEMBER 2007  
FUNCTIONAL BLOCK DIAGRAM  
VBIAS  
AGND  
VIN  
Enable  
Comparator  
SS/ENA  
REG  
VBIAS  
ILIM  
Falling  
Edge  
Deglitch  
SHUTDOWN  
1.2 V  
VIN  
Comparator  
Thermal  
Shutdown  
150°C  
Hysteresis: 0.03 V  
Leading  
Edge  
2.5 µs  
Blanking  
VIN UVLO  
Comparator  
Falling  
and  
100 ns  
SHUTDOWN  
VIN  
BOOT  
Rising  
Edge  
2.95 V  
Deglitch  
Hysteresis: 0.16  
V
60 mΩ  
Start-Up  
Driver  
Suppression  
2.5 µs  
SS_DIS  
L
OUT  
V
O
PH  
Internal/External  
Slow-start  
(Internal Slow-Start Time = 3.35 ms)  
+
C
O
Adaptive Dead-Time  
and  
Control Logic  
R
S
Q
Error  
Amplifier  
PWM  
Comparator  
Reference  
VIN  
VREF = 0.891 V  
60 mΩ  
PGND  
OSC  
Powergood  
Comparator  
PWRGD  
VSENSE  
0.90 V  
Falling  
Edge  
ref  
Deglitch  
TPS54373  
Hysteresis: 0.03 Vref  
SHUTDOWN  
35 µs  
SYNC  
VSENSE  
COMP  
RT  
ADDITIONAL 3-A SWIFT DEVICES  
DEVICE  
OUTPUT VOLTAGE  
DEVICE  
TPS54350  
TPS54372  
TPS54373  
OUTPUT VOLTAGE  
TPS5430/1  
TPS54310 & TPS54317  
TPS54380  
Wide Vin/Adjustable  
Adjustable  
Low Side Gate Drive/Adjustable  
DDR/Adjustable  
Sequencing/Adjustable  
Prebias/Adjustable  
6
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TPS54377  
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SLVS779SEPTEMBER 2007  
TYPICAL CHARACTERISTICS  
DRAIN-SOURCE ON-STATE  
DRAIN-SOURCE ON-STATE  
INTERNALLY SET OSCILLATOR  
FREQUENCY  
RESISTANCE  
vs  
RESISTANCE  
vs  
JUNCTION TEMPERATURE  
100  
vs  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
120  
100  
80  
750  
650  
550  
450  
V
= 5 V  
V
= 3.3 V  
I
I
80  
60  
40  
20  
0
SYNC 2.5 V  
60  
SYNC 0.8 V  
40  
350  
250  
20  
0
−40  
0
25  
85  
125  
−40  
0
25  
85  
125  
−40  
0
25  
85  
125  
T − Junction Temperature − °C  
J
T
J
− Junction Temperature − °C  
T
J
− Junction Temperature − °C  
Figure 1.  
Figure 2.  
Figure 3.  
EXTERNALLY SET OSCILLATOR  
FREQUENCY  
EXTERNALLY SET OSCILLATOR  
FREQUENCY  
VOLTAGE REFERENCE  
vs  
JUNCTION TEMPERATURE  
vs  
vs  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
0.895  
1200  
1150  
600  
550  
500  
450  
400  
RT = 43 kW  
RT = 100 kW  
0.893  
0.891  
1100  
1050  
1000  
0.889  
0.887  
0.885  
−40  
0
25  
85  
125  
−40  
0
25  
85  
125  
−40  
0
25  
85  
125  
− Junction Temperature − o  
C
T
− Junction Temperature − o  
C
T
J
− Junction Temperature − °C  
T
J
J
Figure 4.  
Figure 5.  
Figure 6.  
INTERNAL SLOW-START TIME  
vs  
DEVICE POWER LOSSES  
vs  
ERROR AMPLIFIER  
OPEN LOOP RESPONSE  
JUNCTION TEMPERATURE  
LOAD CURRENT  
1.2  
1
0
3.80  
3.65  
3.50  
3.35  
3.20  
3.05  
140  
120  
100  
80  
T
f
= 25oC,  
R = 10 k,  
A
L
−20  
−40  
−60  
−80  
= 700 kHz,  
C
T
= 160 pF,  
= 25°C  
L
s
V = 5 V,  
A
I
V
= 3.3 V  
O
0.8  
0.6  
Phase  
−100  
−120  
60  
40  
20  
Gain  
0.4  
0.2  
0
−140  
−160  
0
2.90  
2.75  
−180  
−200  
−20  
0
10  
100 1 k 10 k 100 k 1 M 10 M  
0
0.5  
1
1.5  
2
2.5  
3
−40  
0
25  
85  
125  
f − Frequency − Hz  
I
− Output Current − A  
T
J
− Junction Temperature − °C  
O
Figure 7.  
Figure 8.  
Figure 9.  
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APPLICATION INFORMATION  
Figure 10 shows the schematic diagram for a typical TPS54377 application. The TPS54377 (U1) provides up to  
3 A of output current at a nominal output voltage of 1.8 V. For proper thermal performance, the power pad  
underneath the TPS54377 integrated circuit needs to be soldered well to the printed circuit board. The  
TPS54377 can be evaluated by replacing the TPS54317 on the TPS54317 EVM.  
C8  
2200 pF  
R1  
10 kW  
R5  
442 W  
1
2
+
C1  
150 mF  
R3  
6.81 kW  
C7  
150 pF  
R2  
9.76 kW  
C6  
3300 pF  
U1  
TPS54377  
R6  
10 kW  
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
VSNS  
COMP  
2
AGND  
PWRGD  
PWRGD  
R4  
3
C3  
0.047 mF  
RT  
BOOT  
PH  
4
41.2 kW  
NC  
5
SYNC  
SS/EN  
VBIAS  
VIN  
PH  
L1  
1.5 mH  
6
PH  
7
PH  
VOUT  
8
PH  
C5  
C4  
0.1 mF  
9
VIN  
PH  
C2  
100 mF  
C10  
100 mF  
C11  
1000 pF  
10  
11  
12  
VIN  
NC  
PGND  
PGND  
PGND  
PGND  
C9  
10 mF  
PwPd  
Open  
Figure 10. TPS54377 Schematic  
51 k  
- 4.7 k  
R(W) =  
ƒ (MHz)  
(1)  
INPUT VOLTAGE  
The input to the circuit is a nominal 3.3 VDC, applied  
at J1. The optional input filter (C1) is a 150-µF  
capacitor, with a maximum allowable ripple current of  
3 A. C9 is the decoupling capacitor for the TPS54377  
and must be located as close to the device as  
possible.  
OUTPUT FILTER  
The output filter is composed of a 1.5-µH inductor  
and two capacitors. The inductor is a low dc  
resistance (0.017 ) type, Coilcraft DO1813P-122HC.  
The feedback loop is compensated so that the unity  
gain frequency is approximately 75 kHz.  
FEEDBACK CIRCUIT  
PCB LAYOUT  
The resistor divider network of R1 and R2 sets the  
output voltage for the circuit at 1.8 V. R1, along with  
R5, R3, C5, C7, and C8 forms the loop compensation  
network for the circuit. For this design, a Type 3  
topology is used.  
Figure 11 shows a generalized PCB layout guide for  
the TPS54377.  
The VIN pins should be connected together on the  
printed circuit board (PCB) and bypassed with a low  
ESR ceramic bypass capacitor. Care should be taken  
to minimize the loop area formed by the bypass  
capacitor connections, the VIN pins, and the  
TPS54377 ground pins. The minimum recommended  
bypass capacitance is 10-µF ceramic with a X5R or  
X7R dielectric and the optimum placement is closest  
to the VIN pins and the PGND pins.  
OPERATING FREQUENCY  
In the application circuit, the 1.1-MHz operation is  
selected. Connecting a 41.2-kbetween RT (pin 22)  
and analog ground can be used to set the switching  
frequency from 280 kHz to 1.6 MHz. To calculate the  
RT resistor, use the Equation 1:  
8
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SLVS779SEPTEMBER 2007  
The TPS54377 has two internal grounds (analog and  
power). Inside the TPS54377, the analog ground ties  
to all of the noise sensitive signals, while the power  
ground ties to the noisier power signals. Noise  
injected between the two grounds can degrade the  
performance of the TPS54377, particularly at higher  
output currents. Ground noise on an analog ground  
plane can also cause problems with some of the  
control and bias signals. For these reasons, separate  
analog and power ground traces are recommended.  
There should be an area of ground on the top layer  
directly under the IC, with an exposed area for  
connection to the PowerPAD. Use vias to connect  
this ground area to any internal ground planes. Use  
additional vias at the ground side of the input and  
output filter capacitors as well. The AGND and PGND  
pins should be tied to the PCB ground by connecting  
them to the ground area under the device as shown.  
The only components that should tie directly to the  
power ground plane are the input capacitors, the  
output capacitors, the input voltage decoupling  
capacitor, and the PGND pins of the TPS54377. Use  
a separate wide trace for the analog ground signal  
path. This analog ground should be used for the  
voltage set point divider, timing resistor RT, slow start  
capacitor and bias capacitor grounds. Connect this  
trace directly to AGND (pin 1).  
The PH pins should be tied together and routed to  
the output inductor. Since the PH connection is the  
switching node, inductor should be located very close  
to the PH pins and the area of the PCB conductor  
minimized to prevent excessive capacitive coupling.  
Connect the boot capacitor between the phase node  
and the BOOT pin as shown. Keep the boot capacitor  
close to the IC and minimize the conductor trace  
lengths.  
Connect the output filter capacitor(s) as shown  
between the VOUT trace and PGND. It is important to  
keep the loop formed by the PH pins, LO, CO and  
PGND as small as practical.  
Place the compensation components from the VOUT  
trace to the VSENSE and COMP pins. Do not place  
these components too close to the PH trace. Due to  
the size of the IC package and the device pinout,  
they must be routed close, but maintain as much  
separation as possible while still keeping the layout  
compact.  
Connect the bias capacitor from the VBIAS pin to  
analog ground using the isolated analog ground  
trace. The bias capacitor should be as close as  
possible to the VBIAS pin and analog ground . If a  
slow-start capacitor or RT resistor is used, or if the  
SYNC pin is used to select 350-kHz operating  
frequency, connect them to this trace.  
TOPSIDE GROUND AREA  
INPUT  
INPUT  
PH  
BYPASS  
OUTPUT  
BULK  
CAPACITOR  
FILTER  
OUTPUT INDUCTOR  
FILTER  
CAPACITOR  
VOUT  
PGND  
PGND  
VIN  
PH  
PH  
BOOT  
CAPACITOR  
EXPOSED  
PowerPAD  
AREA  
PH  
Vin  
VIN  
PH  
VIN  
BOOT  
PWRGD  
COMP  
VBIAS  
SS/ENA  
COMPENSATION  
NETWORK  
BIAS CAPACITOR  
SLOW START  
CAPACITOR  
FREQUENCY SET RESISTOR  
ANALOG GROUND TRACE  
VIA to Ground Plane  
Figure 11. TPS54377 PCB Layout  
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LAYOUT CONSIDERATIONS FOR THERMAL PERFORMANCE  
For operation at full rated load current, the analog ground plane must provide adequate heat dissipating area. A  
3 inch by 3 inch plane of 1 ounce copper is recommended, though not mandatory, depending on ambient  
temperature and airflow. Most applications have larger areas of internal ground plane available, and the  
PowerPAD should be connected to the largest area available. Additional areas on the top or bottom layers also  
help dissipate heat, and any area available should be used when 3 A or greater operation is desired. Connection  
from the exposed area of the PowerPAD to the analog ground plane layer should be made using 0.013 inch  
diameter vias to avoid solder wicking through the vias. Six vias should be in the PowerPAD area additional vias  
located under the device package may be added to enhance thermal performance. The vias under the package,  
but not in the exposed thermal pad area, can be increased in size to 0.018.  
0.1250  
EXPOSED  
POWERPAD  
AREA  
0.0400 0.0400  
6 x 0.013 DIA  
PIN 1  
24 x 0.0320  
0.0197  
24 x 0.0120  
0.1182  
0.1620  
Figure 12. Recommended Land Pattern for 24-Pin QFN PowerPAD  
10  
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PERFORMANCE GRAPHS  
TA = 25°C, fs = 1.1 MHz, VI = 3.3 V, VO = 1.8 V (unless otherwise specified)  
EFFICIENCY  
vs  
OUTPUT CURRENT  
OUTPUT VOLTAGE  
vs  
OUTPUT CURRENT  
LOOP RESPONSE  
180  
100  
95  
0.3  
0.2  
60  
50  
40  
Phase  
120  
V = 3 V  
I
30  
V = 4 V  
I
60  
20  
10  
0.1  
90  
85  
GAIN  
0
0
0
−10  
−60  
−20  
−30  
-0.1  
V = 5 V  
I
80  
75  
−40  
−50  
−60  
−120  
−180  
-0.2  
-0.3  
V = 6 V  
I
10  
100  
1 k  
10 k  
100 k  
1 M  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
0.5  
1
1.5  
2
2.5  
3
f − Frequency − Hz  
I
− Output Current − A  
I
− Output Current − A  
O
O
Figure 13.  
Figure 14.  
Figure 15.  
OUTPUT RIPPLE VOLTAGE  
LOAD TRANSIENT RESPONSE  
SLOW-START TIMING  
V
= 20 mV/div  
O
V
= 10 mV/div  
O
V = 1 V/div  
I
(AC Coupled)  
(AC Coupled)  
V
= 1 V/div  
O
PH = 2 V/div  
I
= 1 A/div  
O
0.75 A to 2.25 A / step  
1 ms / div  
500 ms / div  
500 ns / div  
Figure 16.  
Figure 17.  
Figure 18.  
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TA = 25°C, fs = 1.1 MHz, VI = 3.3 V, VO = 1.8 V (unless otherwise specified)  
AMBIENT TEMPERATURE  
vs  
LINE REGULATION  
vs  
LOAD CURRENT  
INPUT RIPPLE VOLTAGE  
INPUT VOLTAGE  
130  
120  
110  
0.3  
0.2  
V = 50 mV/div  
I
(AC Coupled)  
I
= 1.5 A  
O
100  
90  
I
= 3 A  
O
0.1  
I
= 0 A  
O
80  
70  
60  
50  
40  
30  
Safe Operating Area †  
0
PH = 2 V/div  
f
= 700 kHz  
= 5 V  
s
-0.1  
V
V
T
I
= 3.3 V  
= 125oC  
O
20  
-0.2  
-0.3  
J
10  
0
0
0.5  
1
1.5  
2
2.5  
3
3
4
5
6
− Load Current − A  
I
L
500 ns / div  
V − Input Voltage − V  
I
Safe operating area is applicable to the test  
board conditions listed in the dissipation  
rating table section of this data sheet.  
Figure 19.  
Figure 20.  
Figure 21.  
the error amplifier is linearly ramped up from 0 V to  
0.891 V in 3.35 ms. Similarly, the converter output  
voltage reaches regulation in approximately 3.35 ms.  
Voltage hysteresis and a 2.5-μs falling edge deglitch  
circuit reduce the likelihood of triggering the enable  
due to noise.  
DETAILED DESCRIPTION  
Disabled Sinking During Start-Up (DSDS)  
The DSDS feature enables minimal voltage drooping  
of output precharge capacitors at start-up. The  
TPS54373 is designed to disable the low-side  
MOSFET to prevent sinking current from a precharge  
output capacitor during start-up. Once the high-side  
MOSFET has been turned on to the maximum duty  
cycle limit, the low-side MOSFET is allowed to switch.  
Once the maximum duty cycle condition is met, the  
converter functions as a sourcing converter until the  
SS/ENA is pulled low.  
The second function of the SS/ENA pin provides an  
external means of extending the slow-start time with  
a low-value capacitor connected between SS/ENA  
and AGND. Adding a capacitor to the SS/ENA pin  
has two effects on start-up. First, a delay occurs  
between release of the SS/ENA pin and start up of  
the output. The delay is proportional to the slow-start  
capacitor value and lasts until the SS/ENA pin  
reaches the enable threshold. The start-up delay is  
approximately:  
Undervoltage Lock Out (UVLO)  
1.2 V  
5 mA  
The TPS54377 incorporates an undervoltage lockout  
circuit to keep the device disabled when the input  
voltage (VIN) is insufficient. During power up, internal  
circuits are held inactive until VIN exceeds the  
nominal UVLO threshold voltage of 2.95 V. Once the  
UVLO start threshold is reached, device start-up  
begins. The device operates until VIN falls below the  
nominal UVLO stop threshold of 2.8 V. Hysteresis in  
the UVLO comparator, and a 2.5-µs rising and falling  
edge deglitch circuit reduce the likelihood of shutting  
the device down due to noise on VIN.  
t
+ C  
 
d
(SS)  
(2)  
Second, as the output becomes active, a brief  
ramp-up at the internal slow-start rate may be  
observed before the externally set slow-start rate  
takes control and the output rises at  
proportional to the slow-start capacitor. The slow-start  
time set by the capacitor is approximately:  
a rate  
0.7 V  
t
+ C  
 
(SS)  
(SS)  
5 mA  
(3)  
The actual slow-start is likely to be less than the  
above approximation due to the brief ramp-up at the  
internal rate.  
Slow-Start/Enable (SS/ENA)  
The slow-start/enable pin provides two functions; first,  
the pin acts as an enable (shutdown) control by  
keeping the device turned off until the voltage  
exceeds the start threshold voltage of approximately  
1.2 V. When SS/ENA exceeds the enable threshold,  
device start up begins. The reference voltage fed to  
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VBIAS Regulator (VBIAS)  
Oscillator and PWM Ramp  
The VBIAS regulator provides internal analog and  
digital blocks with a stable supply voltage over  
variations in junction temperature and input voltage. A  
high quality, low-ESR, ceramic bypass capacitor is  
required on the VBIAS pin. X7R or X5R grade  
dielectrics are recommended because their values  
are more stable over temperature. The bypass  
capacitor should be placed close to the VBIAS pin  
and returned to AGND. External loading on VBIAS is  
allowed, with the caution that internal circuits require  
a minimum VBIAS of 2.70 V, and external loads on  
VBIAS with ac or digital switching noise may degrade  
performance. The VBIAS pin may be useful as a  
reference voltage for external circuits.  
The oscillator frequency can be set to internally fixed  
values of 350 kHz or 550 kHz using the SYNC pin as  
a static digital input. If a different frequency of  
operation is required for the application, the oscillator  
frequency can be externally adjusted from 280 kHz to  
1600 kHz by connecting a resistor to the RT pin to  
ground and floating the SYNC pin. The switching  
frequency is approximated by the following equation,  
where R is the resistance from RT to AGND:  
51 k  
R(W) + 4.7 k  
SWITCHING FREQUENCY (MHz) =  
(4)  
External synchronization of the PWM ramp is  
possible over the frequency range of 330 kHz to 1600  
kHz by driving a synchronization signal into SYNC  
and connecting a resistor from RT to AGND. Choose  
an RT resistor that sets the free-running frequency to  
Voltage Reference  
The voltage reference system produces a precise Vref  
signal by scaling the output of a temperature stable  
bandgap circuit. During manufacture, the bandgap  
and scaling circuits are trimmed to produce 0.891 V  
at the output of the error amplifier, with the amplifier  
connected as a voltage follower. The trim procedure  
adds to the high precision regulation of the  
TPS54377, since it cancels offset errors in the scale  
and error amplifier circuits.  
80% of the synchronization signal. Table  
summarizes the frequency selection configurations.  
1
Table 1. Summary of the Frequency Selection Configurations  
SWITCHING FREQUENCY  
350 kHz, internally set  
SYNC PIN  
Float or AGND  
RT PIN  
Float  
550 kHz, internally set  
2.5 V  
Float  
Externally set 280 kHz to 1600 kHz  
Externally synchronized frequency  
Float  
R = 27.4 k to 180 k  
Synchronization signal  
R = RT value for 80% of external synchronization frequency  
Error Amplifier  
The high performance, wide bandwidth, voltage error  
amplifier sets the TPS54377 apart from most dc/dc  
converters. The user is given the flexibility to use a  
wide range of output L and C filter components to suit  
the particular application needs. Type 2 or type 3  
compensation can be employed using external  
compensation components.  
to its valley voltage. When the ramp begins to charge  
back up, the low-side FET turns off and high-side  
FET turns on. As the PWM ramp voltage exceeds the  
error amplifier output voltage, the PWM comparator  
resets the latch, thus turning off the high-side FET  
and turning on the low-side FET. The low-side FET  
remains on until the next oscillator pulse discharges  
the PWM ramp.  
PWM Control  
During transient conditions, the error amplifier output  
could be below the PWM ramp valley voltage or  
above the PWM peak voltage. If the error amplifier is  
high, the PWM latch is never reset and the high-side  
FET remains on until the oscillator pulse signals the  
control logic to turn off the high-side FET and turns  
on the low-side FET. The device operates at its  
maximum duty cycle until the output voltage rises to  
the regulation set-point, setting VSENSE to  
approximately the same voltage as Vref. If the error  
amplifier output is low, the pwm latch is continually  
reset and the high-side FET does not turn on. The  
Signals from the error amplifier output, oscillator, and  
current limit circuit are processed by the PWM control  
logic. Referring to the internal block diagram, the  
control logic includes the PWM comparator, OR gate,  
PWM latch, and portions of the adaptive dead-time  
and control logic block. During steady-state operation  
below the current limit threshold, the PWM  
comparator output and oscillator pulse train  
alternately reset and set the PWM latch. Once the  
PWM latch is set, the low-side FET remains on for a  
minimum duration set by the oscillator pulse duration.  
During this period, the PWM ramp discharges rapidly  
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low-side FET remains on until the VSENSE voltage  
several milliseconds. With a persistent fault condition,  
the device cycles continuously; starting up by control  
of the soft-start circuit, heating up due to the fault,  
and then shutting down upon reaching the thermal  
shutdown point.  
decreases to  
a
range that allows the PWM  
comparator to change states. The TPS54377 is  
capable of sinking current continuously until the CO  
reaches the regulation set-point.  
If the current limit comparator trips for longer than  
100 ns, the PWM latch resets before the PWM ramp  
exceeds the error amplifier output. The high-side FET  
turns off and low-side FET turns on to decrease the  
energy in the output inductor, and consequently, the  
output current. This process is repeated each cycle in  
which the current limit comparator is tripped.  
Power Good (PWRGD)  
The power good circuit monitors for undervoltage  
conditions on VSENSE. If the voltage on VSENSE is  
10% below the reference voltage, the open-drain  
PWRGD output is pulled low. PWRGD is also pulled  
low if VIN is less than the UVLO threshold, or  
SS/ENA is low, or thermal shutdown is asserted.  
When VIN = UVLO threshold, SS/ENA = enable  
threshold, and VSENSE > 90% of Vref, the open drain  
output of the PWRGD pin is high. A hysteresis  
voltage equal to 3% of Vref and a 35-μs falling edge  
deglitch circuit prevent tripping of the power good  
comparator due to high frequency noise.  
Dead-Time Control and MOSFET Drivers  
Adaptive dead-time control prevents shoot-through  
current from flowing in both N-channel power  
MOSFETs during the switching transitions by actively  
controlling the turn-on times of the MOSFET drivers.  
The high-side driver does not turn on until the gate  
drive voltage to the low-side FET is below 2 V. The  
low-side driver does not turn on until the voltage at  
the gate of the high-side MOSFETs is below 2 V. The  
high-side and low-side drivers are designed with a  
300-mA source and sink capability to drive the power  
MOSFETs gates. The low-side driver is supplied from  
VIN, while the high-side drive is supplied from the  
BOOT pin. A bootstrap circuit uses an external BOOT  
capacitor and an internal 2.5-bootstrap switch  
connected between the VIN and BOOT pins. The  
integrated bootstrap switch improves drive efficiency  
and reduces external component count.  
OUTPUT VOLTAGE LIMITATIONS  
Due to the internal design of the TPS54377, there are  
both upper and lower output voltage limits for any  
given input voltage. Additionally, the lower boundary  
of the output voltage set point range is also  
dependent on operating frequency. The upper limit of  
the output voltage set point is constrained by the  
maximum duty cycle of 90% and is given by  
Equation 5:  
V max = 0.9 x V min - I max [ (-0.016 x V min + 0.184) + RL]  
O
I
O
I
(5)  
Where:  
Overcurrent Protection  
VImin = minimum input voltage  
IOmax = maximum load current  
RL = series resistance of the output inductor  
The cycle by cycle current limiting is achieved by  
sensing the current flowing through the high-side  
MOSFET and differential amplifier, and comparing it  
to the preset overcurrent threshold. The high-side  
MOSFET is turned off within 200 ns of reaching the  
Equation 5 assumes maximum on resistance for the  
internal high-side and low-side FETs.  
current limit threshold.  
A 100-ns leading edge  
The lower limit is constrained by the minimum  
controllable on time which may be as high as 150 ns.  
The approximate minimum output voltage for a given  
input voltage, operating frequency, and minimum load  
current is given in Equation 6:  
blanking circuit prevents false tripping of the current  
limit. Current limit detection occurs only when current  
flows from VIN to PH when sourcing current to the  
output filter. Load protection during current sink  
operation is provided by thermal shutdown.  
V min = (150E-9 x V max x Fs x 1.08) - I min x  
O
I
o
Thermal Shutdown  
-0.026  
3
The device uses the thermal shutdown to turn off the  
power MOSFETs and disable the controller if the  
junction temperature exceeds 150°C. The device is  
released from shutdown when the junction  
temperature decreases to 10°C below the thermal  
shutdown trip point and starts up under control of the  
slow-start circuit. Thermal shutdown provides  
protection when an overload condition is sustained for  
X V max  
+ 0.111 + RL  
)
(
[
]
i
(6)  
Where:  
VI = maximum input voltage  
Fs = programmed operating frequency  
IO = minimum load current  
RL = series resistance of the output inductor  
14  
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Equation 6 assumes nominal on resistance for the  
high-side and low-side FETs, and has an eight  
percent factor for variation of operating frequency set  
point. Any design operating near the operational limits  
of the device should be carefully checked to assure  
proper functionality.  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
8-Oct-2007  
PACKAGING INFORMATION  
Orderable Device  
TPS54377RHFR  
TPS54377RHFRG4  
TPS54377RHFT  
Status (1)  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
QFN  
RHF  
24  
24  
24  
24  
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
QFN  
QFN  
QFN  
RHF  
RHF  
RHF  
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
TPS54377RHFTG4  
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is  
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the  
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take  
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on  
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited  
information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
5-Oct-2007  
TAPE AND REEL BOX INFORMATION  
Device  
Package Pins  
Site  
Reel  
Reel  
A0 (mm)  
B0 (mm)  
K0 (mm)  
P1  
W
Pin1  
Diameter Width  
(mm) (mm) Quadrant  
(mm)  
330  
(mm)  
12  
TPS54377RHFR  
TPS54377RHFT  
RHF  
RHF  
24  
24  
SITE 41  
SITE 41  
4.3  
4.3  
5.3  
5.3  
1.3  
1.3  
8
8
12  
12  
Q1  
Q1  
180  
12  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
5-Oct-2007  
Device  
Package  
Pins  
Site  
Length (mm) Width (mm) Height (mm)  
TPS54377RHFR  
TPS54377RHFT  
RHF  
RHF  
24  
24  
SITE 41  
SITE 41  
346.0  
190.0  
346.0  
212.7  
29.0  
31.75  
Pack Materials-Page 2  
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