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产品型号TSUS3400的Datasheet PDF文件预览

TSUS3400

Vishay Semiconductors

www.vishay.com

Infrared Emitting Diode, 950 nm, GaAs

FEATURES

• Package type: leaded

• Package form: T-1

• Dimensions (in mm): Ø 3

• Peak wavelength: λ_p= 950 nm

• High reliability

• Angle of half intensity: ϕ = 18ꢀ

• Low forward voltage

• Radiant power: 20 mW at I_F= 100 mA

• Suitable for DC and high pulse current operation

• Good spectral matching with Si photodetectors

22592

• Compliant to RoHS Directive 2002/95/EC and in

accordance with WEEE 2002/96/EC

Note

DESCRIPTION

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

TSUS3400 is an infrared, 950 nm emitting diode in GaAs

technology, molded in a clear, blue tinted plastic package.

APPLICATIONS

• Infrared source in photo interrupters, reflective and

transmissive sensors

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

ϕ (deg)

λ_p(nm)

t_r(ns)

TSUS3400

950

800

Note

•

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

PACKAGING

Bulk

REMARKS

MOQ: 5000 pcs, 5000 pcs/bulk

PACKAGE FORM

TSUS3400

T-1

Note

MOQ: minimum order quantity

•

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 ꢀC, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

V_R

Forward current

I_F

100

200

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p= 100 μs

t_p= 100 μs

I_FM

I_FSM

P_V

170

100

ꢀC

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

Thermal resistance junction/ambient

T_j

T_amb

T_stg

T_sd

- 40 to + 100

260

ꢀC

t ≤ 5 s, 2 mm from case

ꢀC

R_thJA

450

K/W

Rev. 1.5, 25-Aug-11

Document Number: 81051

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TSUS3400

Vishay Semiconductors

www.vishay.com

250

200

125

100

150

100

R_thJA

100

94 7916

94 8029

T_amb- Ambient Temperature (°C)

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current vs. Ambient Temperature

BASIC CHARACTERISTICS (T_amb= 25 ꢀC, unless otherwise specified)

PARAMETER

TEST CONDITION

I_F= 100 mA, t_p= 20 ms

I_F= 1.5 A, t_p= 100 μs

I_F= 100 mA

SYMBOL

MIN.

TYP.

1.3

MAX.

UNIT

V_F

TK_VF

I_R

1.7

Forward voltage

2.2

Temperature coefficient of V_F

Reverse current

- 1.3

mV/K

μA

_R= 5 V

_R= 100 μA

_R= 0 V, f = 1 MHz, E = 0

100

Breakdown voltage

V_(BR)

C_j

Junction capacitance

I_F= 100 mA, t_p= 20 ms

I_F= 1.5 A, t_p= 100 μs

I_F= 100 mA, t_p= 20 ms

I_F= 20 mA

I_e

mW/sr

%/K

deg

Radiant intensity

I_e

140

Radiant power

φ_e

Temperature coefficient of φ_e

Angle of half intensity

Peak wavelength

TKφ_e

- 0.8

I_F= 100 mA

I_F= 1.5 A

λ_p

Δλ

TKλ_p

t_r

950

Spectral bandwidth

Temperature coefficient of λ_p

0.2

800

400

800

400

2.1

nm/K

Rise time

t_r

I_F= 100 mA

I_F= 1.5 A

t_f

Fall time

t_f

Virtual source diameter

Rev. 1.5, 25-Aug-11

Document Number: 81051

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TSUS3400

Vishay Semiconductors

www.vishay.com

BASIC CHARACTERISTICS (T_amb= 25 ꢀC, unless otherwise specified)

1000

100

t /T= 0.01, I

= 2 A

0.02

0.05

0.1

0.2

0.5

-1

0.1

-2

-1

I_F- Forward Current (mA)

94 7982

t_p- Pulse Duration (ms)

94 7947

Fig. 3 - Pulse Forward Current vs. Pulse Duration

Fig. 6 - Radiant Intensity vs. Forward Current

10⁴

10³

10²

10¹

10⁰

10^-1

1000

100

0.1

I_F- Forward Current (mA)

94 7980

V_F- Forward Voltage (V)

94 7996

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 7 - Radiant Power vs. Forward Current

1.6

1.2

1.1

1.2

0.8

0.4

I_F= 10 mA

I_F= 20 mA

1.0

0.9

0.8

0.7

100

140

- 10 0 10

100

T_amb- Ambient Temperature (°C)

94 7990

94 7993

Fig. 5 - Relative Forward Voltage vs. Ambient Temperature

Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature

Rev. 1.5, 25-Aug-11

Document Number: 81051

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TSUS3400

Vishay Semiconductors

www.vishay.com

0°

1.25

1.0

30°

40°

0.75

0.5

0.25

1.0

0.9

50°

60°

0.8

0.7

70°

80°

I_F= 100 mA

1000

900

950

0.6

0.6 0.4 0.2

0.2

0.4

λ - Wavelength (nm)

94 7994

94 7983

Fig. 9 - Relative Radiant Power vs. Wavelength

Fig. 10 - Relative Radiant Intensity vs. Angular Displacement

PACKAGE DIMENSIONS in millimeters

95 10915

Rev. 1.5, 25-Aug-11

Document Number: 81051

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical

requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements

about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular

product with the properties described in the product specification is suitable for use in a particular application. Parameters

provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please

contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by

any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the

definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council

of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment

(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that

all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free

requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference

to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21

conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000

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TSUS3400产品参数

型号:	TSUS3400
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	TELEFUNKEN MICROELECTRONICS GMBH
Reach Compliance Code：	unknown
风险等级：	5.73
Is Samacsys：	N
最大正向电流：	0.1 A
最大正向电压：	1.7 V
JESD-609代码：	e0
安装特点：	THROUGH HOLE MOUNT
最高工作温度：	100 °C
最低工作温度：	-55 °C
峰值波长：	950 nm
最大反向电压：	5 V
半导体材料：	GaAs
光谱带宽：	5e-8 m
子类别：	Infrared LEDs
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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