UMA4NT1现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

UMA4NT1, UMA6NT1

Preferred Devices

Dual Common Emitter Bias

Resistor Transistors

PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

http://onsemi.com

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the UMC2NT1 series, two

BRT devices are housed in the SOT−353 package which is ideal for

low power surface mount applications where board space is at a

premium.

3

2

1

R1

Q1

Q2

4

5

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

MARKING

DIAGRAM

5

4

MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q

A

1

d

Ux

and Q , − minus sign for Q (PNP) omitted)

2

1

SC−88A/SOT−353

CASE 419A

STYLE 7

Rating

Collector-Base Voltage

Symbol

Value

50

Unit

1

2

3

V

CBO

V

CEO

Vdc

Ux = Device Marking

Collector-Emitter Voltage

Collector Current

50

x

d

= 0 or 1

= Date Code

I

C

100

mAdc

THERMAL CHARACTERISTICS

ORDERING INFORMATION

Thermal Resistance − Junction-to-Ambient

(surface mounted)

R

833

°C/W

°C

θ

JA

†

Device

Package

SOT−323

Shipping

Operating and Storage Temperature

Range

T , T

J

−65 to

+150

stg

UMA4NT1

UMA6NT1

3000/Tape & Reel

Total Package Dissipation

P

*150

mW

D

@ T = 25°C (Note 1.)

A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

UMA4NT1

UMA6NT1

U0

U1

10

47

∞

Preferred devices are recommended choices for future use

1. Device mounted on a FR-4 glass epoxy printed circuit board using the

minimum recommended footprint.

and best overall value.

Semiconductor Components Industries, LLC, 2004

1

Publication Order Number:

March, 2004 − Rev. 2

UMA4NT1/D

UMA4NT1, UMA6NT1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (V = 50 V, I = 0)

I

−

100

500

nAdc

mAdc

CB

E

CBO

Collector-Emitter Cutoff Current (V = 50 V, I = 0)

CB

B

CEO

Emitter-Base Cutoff Current

(V = 6.0, I = 5.0 mA)

UMA4NT1

UMA6NT1

I

−

0.9

0.2

EBO

EB

C

ON CHARACTERISTICS

Collector-Base Breakdown Voltage (I = 10 µA, I = 0)

V

50

−

Vdc

C

E

(BR)CBO

Collector-Emitter Breakdown Voltage (I = 2.0 mA, I = 0)

C

B

(BR)CEO

DC Current Gain

(V = 10 V, I = 5.0 mA)

UMA4NT1

UMA6NT1

h

FE

160

250

−

CE

C

Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)

V

−

0.25

0.2

−

Vdc

kW

C

B

CE(SAT)

Output Voltage (on) (V = 5.0 V, V = 2.5 V, R = 1.0 kW)

V

OL

CC

B

L

Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kW)

V

OH

4.9

CC

B

L

Input Resistor

UMA4NT1

UMA6NT1

R1

7.0

33

10

47

13

61

250

200

150

100

50

0

R

= 833°C/W

θ

JA

−50

0

50

100

150

T , AMBIENT TEMPERATURE (°C)

A

Figure 1. Derating Curve

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2

UMA4NT1, UMA6NT1

TYPICAL ELECTRICAL CHARACTERISTICS − UMA4NT1

10

1000

I /I = 10

C

B

25°C

T = 75°C

A

−25°C

100

T = 75°C

1

0.1

A

25°C

−25°C

10

1

V

CE

= 10 V

0.01

0

10

20

30

40

50

60

70

80

1

10

100

1000

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 2. V_CE(sat)versus I_C

Figure 3. DC Current Gain

100

10

1

12

10

8

f = 1 MHz

= 0 mA

T = 25°C

A

I

E

75°C

T = −25°C

A

6

4

25°C

0.1

2

0

V

O

= 5 V

5

0.01

0

5

10

15

20

25

30

35

40

45

0

1

2

3

4

6

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

IN

Figure 4. Output Capacitance

Figure 5. Output Current versus Input Voltage

http://onsemi.com

3

UMA4NT1, UMA6NT1

TYPICAL ELECTRICAL CHARACTERISTICS − UMA6NT1

10

1000

I /I = 10

C

B

T = 75°C

A

25°C

−25°C

1

0.1

−25°C

25°C

T = 75°C

A

100

V

CE

= 10 V

10

0.01

0

10

20

30

40

50

60

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 6. V_CE(sat)versus I_C

Figure 7. DC Current Gain

100

10

1

12

10

8

75°C

T = −25°C

f = 1 MHz

= 0 mA

T = 25°C

A

I

E

A

25°C

6

4

0.1

0.01

2

0

V

O

= 5 V

0.001

0

5

10

15

20

25

30

35

40

45

0

1

2

3

4

5

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

IN

Figure 8. Output Capacitance

Figure 9. Output Current versus Input Voltage

http://onsemi.com

4

UMA4NT1, UMA6NT1

PACKAGE DIMENSIONS

SC−88A/SOT−353

5−LEAD PACKAGE

CASE 419A−02

ISSUE G

A

NOTES:

1. DIMENSIONING AND TOLERANCING

PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419A−01 OBSOLETE. NEW STANDARD

419A−02.

G

4. DIMENSIONS A AND B DO NOT INCLUDE

MOLD FLASH, PROTRUSIONS, OR GATE

BURRS.

5

4

3

−B−

S

INCHES

DIM MIN MAX

MILLIMETERS

1

2

MIN

1.80

1.15

0.80

0.10

MAX

2.20

1.35

1.10

0.30

A

B

C

D

G

H

J

0.071

0.045

0.031

0.004

0.087

0.053

0.043

0.012

M

B

0.2 (0.008)

D 5 PL

0.026 BSC

0.65 BSC

−−−

0.004

0.010

0.012

−−−

0.10

0.25

0.30

N

K

N

S

0.008 REF

0.20 REF

0.079

0.087

2.00

2.20

J

STYLE 7:

PIN 1. BASE

2. EMITTER

C

3. BASE

4. COLLECTOR

5. COLLECTOR

K

H

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

mm

inches

ǒ

Ǔ

SCALE 20:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

5

UMA4NT1, UMA6NT1

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

UMA4NT1/D

http://onsemi.com

6

型号:	UMA4NT1
Brand Name：	ON Semiconductor
是否无铅：	含铅
生命周期：	End Of Life
IHS 制造商：	ON SEMICONDUCTOR
零件包装代码：	SC-70
包装说明：	CASE 419A-02, SC-88A, SC-70, 5 PIN
针数：	5
制造商包装代码：	419A-02
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	5.45
Is Samacsys：	N
其他特性：	BUILT IN BIAS RESISTOR
最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V
配置：	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	160
JESD-30 代码：	R-PDSO-G5
JESD-609代码：	e0
湿度敏感等级：	1
元件数量：	2
端子数量：	5
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	240
极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.15 W
认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signal
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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