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产品型号UMT2222AT106的Datasheet PDF文件预览

UMT2222A / SST2222A / MMST2222A  
Transistors  
NPN Medium Power Transistor (Switching)  
UMT2222A / SST2222A / MMST2222A  
zFeatures  
zDimensions (Unit : mm)  
1) BVCEO > 40V (IC=10mA)  
2) Complements the UMT2907A / SST2907A  
/ MMST2907A.  
UMT2222A  
(1) Emitter  
(2) Base  
(3) Collector  
ROHM : UMT3  
EIAJ : SC-70  
zPackage, marking, and packaging specifications  
SST2222A  
Part No.  
Packaging type  
Marking  
UMT2222A SST2222A MMST2222A  
UMT3  
R1P  
SST3  
R1P  
SMT3  
R1P  
T106  
T116  
T146  
Code  
(1) Emitter  
(2) Base  
(3) Collector  
Basic ordering unit  
(pieces)  
3000  
3000  
3000  
ROHM : SST3  
MMST2222A  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Collector-base voltage  
Symbol  
Limits  
75  
Unit  
V
(1) Emitter  
(2) Base  
(3) Collector  
VCBO  
VCEO  
VEBO  
ROHM : SMT3  
EIAJ : SC-59  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
40  
V
6
V
I
C
0.6  
A
UMT2222A,SST2222A,  
MMST2222A  
0.2  
W
Collector power  
dissipation  
Junction temperature  
P
C
SST2222A  
0.35  
150  
W
°C  
°C  
Tj  
Tstg  
Storage temperature  
55 to +150  
When mounted on a 7 x 5 x 0.6 mm ceramic board  
zElectrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
75  
40  
6
100  
100  
0.3  
1
V
V
I
I
I
C
C
E
=
=
10µA  
10mA  
V
=10µA  
I
CBO  
0.6  
nA  
nA  
V
CB  
EB  
=
=
60V  
Emitter cutoff current  
I
EBO  
V
3V  
I
I
I
I
C
/I  
/I  
/I  
/I  
B
=
150mA/15mA  
500mA/50mA  
150mA/15mA  
500mA/50mA  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VCE(sat)  
V
V
C
C
C
B
B
B
=
=
=
1.2  
2
V
BE(sat)  
35  
50  
75  
50  
100  
40  
300  
300  
V
V
V
V
V
V
V
V
V
V
V
V
V
CE  
CE  
CE  
CE  
CE  
=
10V , I  
10V , I  
10V , I  
C
C
C
=
C
=
0.1mA  
=1mA  
10mA  
150mA  
=
=
=
=
=
=
=
=
DC current transfer ratio  
hFE  
1V , IC  
10V , I  
10V , I  
20V , I  
10V , f  
=
=
150mA  
500mA  
8
CE  
CE  
CB  
C
C
Transition frequency  
Output capacitance  
Emitter input capacitance  
Delay time  
fT  
MHz  
pF  
pF  
ns  
=−20mA, f  
100kHz  
100kHz  
=100MHz  
Cob  
Cib  
td  
=
=
25  
10  
25  
225  
60  
EB  
CC  
CC  
CC  
CC  
=
0.5V , f  
=
=
=
=
30V , VBE(OFF)  
30V , VBE(OFF)  
=
=
0.5V , I  
0.5V , I  
C
C
=
=
150mA , IB1  
150mA , IB1  
=
=
15mA  
15mA  
Rise time  
tr  
ns  
Storage time  
tstg  
tf  
ns  
30V , I  
30V , I  
C
=
=
150mA , IB1 =−  
150mA , IB1 =−  
I
I
B2  
=
=
15mA  
15mA  
Fall time  
ns  
C
B2  
Rev.A  
1/3  
UMT2222A / SST2222A / MMST2222A  
Transistors  
zElectrical characteristic curves  
100  
1000  
600  
Ta=25°C  
Ta=25°C  
500  
400  
VCE=10V  
50  
100  
300  
200  
100  
1V  
I
B
=0µA  
10  
0.1  
0
0
5
10  
1.0  
10  
100  
1000  
COLLECTOR-EMITTER VOLTAGE : VCE(V)  
COLLECTOR CURRENT : Ic(mA)  
Fig.1 Grounded emitter output  
characteristics  
Fig.3 DC current gain vs. collector current(Ι)  
1000  
100  
10  
Ta=25°C  
/ I =10  
VCE  
=
10V  
I
C
B
0.3  
0.2  
Ta=125°C  
25°C  
55°C  
0.1  
0
1.0  
10  
100  
1000  
0.1  
1.0  
10  
100  
1000  
COLLECTOR CURRENT : Ic(mA)  
COLLECTOR CURRENT : Ic(mA)  
Fig.2 Collector-emitter saturation  
Fig.4 DC current gain vs. collector current(ΙΙ)  
voltage vs. collector current  
1.8  
1.6  
Ta=25°C  
/ I 10  
1000  
100  
10  
I
C
B=  
Ta=25°C  
10V  
1kHz  
V =  
CE  
f
=
1.2  
0.8  
0.4  
0
1.0  
10  
100  
1000  
COLLECTOR CURRENT : Ic(mA)  
0.1  
1.0  
10  
COLLECTOR CURRENT : Ic(mA)  
100  
1000  
Fig.6 Base-emitter saturation  
voltage vs. collector current  
Fig.5 AC current gain vs. collector current  
Rev.A  
2/3  
UMT2222A / SST2222A / MMST2222A  
Transistors  
500  
1000  
1.8  
1.6  
Ta=25°C  
10V  
Ta=25°C  
30V  
10  
Ta=25°C  
V =  
CE  
V =  
CC  
I
C / IB=10  
IC / IB=  
1.2  
0.8  
100  
100  
VCC=  
30V  
0.4  
0
10V  
10  
5
10  
1.0  
1
10  
100  
1000  
10  
100  
1000  
1.0  
10  
100  
1000  
COLLECTOR CURRENT : Ic(mA)  
COLLECTOR CURRENT : Ic(mA)  
COLLECTOR CURRENT : Ic(mA)  
Fig.7 Grounded emitter propagation  
characteristics  
Fig.8 Turn-on time vs. collector  
current  
Fig.9 Rise time vs. collector  
current  
1000  
1000  
100  
Ta=25°C  
1MHz  
Ta=25°C  
Ta=25°C  
VCC 30V  
IC 10IB1=10IB2  
f
=
VCC=30V  
C
=
I =10IB1=10IB2  
=
Cib  
Cob  
100  
100  
10  
10  
1.0  
10  
1.0  
1
0.1  
10  
100  
1000  
10  
100  
1000  
1.0  
10  
100  
COLLECTOR CURRENT : Ic(mA)  
COLLECTOR CURRENT : Ic(mA)  
REVERSE BIAS VOLTAGE(V)  
Fig.10 Storage time vs. collector  
current  
Fig.11 Fall time vs. collector  
current  
Fig.12 Input / output capacitance  
vs. voltage  
100  
1000  
Ta=25°C  
Ta=25°C  
VCE 10V  
=
100MHz 250MHz 300MHz  
200MHz  
10  
100  
1
250MHz  
0.1  
10  
1.0  
1
10  
100  
1000  
10  
100  
1000  
COLLECTOR CURRENT : Ic(mA)  
COLLECTOR CURRENT : Ic(mA)  
Fig.13 Gain bandwidth product  
Fig.14 Gain bandwidth product  
vs. collector current  
3/3  
Rev.A  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level  
of reliability and the malfunction of which would directly endanger human life (such as medical  
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers  
and other safety devices), please be sure to consult with our sales representative in advance.  
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance  
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow  
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in  
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM  
cannot be held responsible for any damages arising from the use of the products under conditions out of the  
range of the specifications or due to non-compliance with the NOTES specified in this catalog.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact your nearest sales office.  
THE AMERICAS / EUPOPE / ASIA / JAPAN  
ROHM Customer Support System  
Contact us : webmaster@ rohm.co.jp  
www.rohm.com  
TEL : +81-75-311-2121  
FAX : +81-75-315-0172  
Copyright © 2007 ROHM CO.,LTD.  
21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan  
Appendix1-Rev2.0  
配单直通车
UMT2222AT106产品参数
型号:UMT2222AT106
是否无铅:不含铅
是否Rohs认证:符合
生命周期:Not Recommended
IHS 制造商:ROHM CO LTD
零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.21.00.75
Factory Lead Time:13 weeks
风险等级:1.13
Is Samacsys:N
最大集电极电流 (IC):0.6 A
基于收集器的最大容量:7 pF
集电极-发射极最大电压:40 V
配置:SINGLE
最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3
JESD-609代码:e1
湿度敏感等级:1
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:YES
端子面层:TIN SILVER COPPER
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING
晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz
最大关闭时间(toff):285 ns
最大开启时间(吨):35 ns
VCEsat-Max:0.6 V
Base Number Matches:1
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