3 GHz SILICON MMIC UPC2708T
WIDE-BAND AMPLIFIER UPC2711T
GAIN vs. FREQUENCY
FEATURES
20
• WIDE FREQUENCY RESPONSE: 3 GHz
• HIGH GAIN: 15 dB (UPC2708T)
UPC2708
15
• SATURATED OUTPUT POWER: +10 dBm (UPC2708T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
UPC2711
10
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
5
0
• TAPE AND REEL PACKAGING OPTION AVAILABLE
0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency, f (GHz)
DESCRIPTION
The UPC2708T and UPC2711T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable as buffer amplifiers for wide-band
applications. They are designed for low cost gain stages in
cellular radios, GPS receivers, DBS tuners, PCN, and test/
measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25 °C, f = 1 GHz, VCC = 5 V)
PART NUMBER
PACKAGE OUTLINE
UPC2708T
T06
UPC2711T
T06
SYMBOLS
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
UNITS
mA
MIN
20
TYP
26
MAX
33
MIN
9
TYP
12
MAX
15
ICC
GS
fU
Small Signal Gain
dB
13
15
18.5
11
13
16.5
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
GHz
dB
2.7
7.5
2.9
2.7
-2
2.9
∆GS
Gain Flatness, f = 0.1 - 2.6 GHz
f = 0.1 - 2.5 GHz
±0.8
±0.8
1
PSAT
P1dB
NF
Saturated Output Power
Output Power at 1 dB Compression Point
Noise Figure
dBm
dBm
dB
10
7.5
6.5
11
-4
8
5
6.5
RLIN
Input Return Loss
dB
8
20
25
RLOUT
ISOL
∆GT
Output Return Loss
dB
dB
16
18
20
23
9
12
30
Isolation
25
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
dB/°C
°C/W
+0.002
-0.002
RTH
200
200
California Eastern Laboratories