VBUS053CZ-HAF-G-08全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

产品型号VBUS053CZ-HAF-G-08的Datasheet PDF文件预览

VBUS053CZ-HAF

Vishay Semiconductors

USB-OTG BUS-Port ESD-Protection for V_BUS= 28 V

FEATURES

• Ultra compact LLP75-7L package

• Low package height < 0.6 mm

• 3-line USB ESD-protection with max. working

range = 5.5 V

• V_BUS-protection with 28 V working range

• Low leakage current

21102

• Low load capacitance C_D= 0.7 pF

20517

• ESD-protection to IEC 61000-4-2

15 kV contact discharge

15 kV air discharge

• Surge current acc. IEC 61000-4-5 I_PP> 3 A

MARKING (example only)

• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

21001

Dot = pin 1 marking

XX = date code

YY = type code (see table below)

ORDERING INFORMATION

DEVICE NAME

TAPED UNITS PER REEL

MINIMUM ORDER QUANTITY

(8 mm TAPE on 7" REEL)

ORDERING CODE

VBUS053CZ-HAF

VBUS053CZ-HAF-G-08

3000

15 000

PACKAGE DATA

PACKAGE

NAME

TYPE

CODE

MOLDING COMPOUND

FLAMMABILITY RATING SENSITIVITY LEVEL

MOISTURE

SOLDERING

CONDITIONS

DEVICE NAME

WEIGHT

MSL level 1

UL 94 V-0

VBUS053CZ-HAF

LLP75-7L

4.2 mg

260 °C/10 s at terminals

(according J-STD-020)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Data line D+, D-, ID: Pin 1, 2 and 3 to ground (pin 7)

Peak pulse current

Peak pulse power

acc. IEC 61000-4-5; t_P= 8/20 μs; single shot

I_PPM

P_PP

acc. IEC 61000-4-5; t_P= 8/20 μs; single shot

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

ESD immunity

V_ESD

V_BUS: Pin 6 to ground (pin 7)

Peak pulse current

acc. IEC 61000-4-5; t_P= 8/20 μs; single shot

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

Junction temperature

I_PPM

P_PP

Peak pulse power

156

°C

ESD immunity

V_ESD

Operating temperature

Storage temperature

T_J

- 40 to + 125

- 55 to + 150

T_STG

** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902

Document Number: 85200

Rev. 1.3, 23-May-11

For technical questions, contact: ESDprotection@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VBUS053CZ-HAF

Vishay Semiconductors

USB-OTG BUS-Port ESD-Protection

for V_BUS= 28 V

ELECTRICAL CHARACTERISTICS VBUS053CZ-HAF All inputs (pin 1, 2, and 3) to ground (pin 7)

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of line which can be protected

at I_R= 0.1 μA

N_channel

V_RWM

5.5

0.02

0.085

0.1

1.2

lines

Reverse working voltage

at V_R= 3.3 V

μA

Reverse current

at V_R= 3.3 V; T = 65 °C

at V_R= V_RWM= 5.5 V

I_R

Forward voltage

at I_F= 15 mA

V_F

0.7

6.5

Reverse breakdown voltage

at I_R= 1 mA

V_BR

at I_PP= 1 A; acc. IEC 61000-4-5

at I_PP= 3 A; acc. IEC 61000-4-5

at I_F= 3 A; acc. IEC 61000-4-5

3.4

Reverse clamping voltage

V_C

V_F

Forward clamping voltage

Line capacitance

4.1

Test pin at V_R= 0 V;

any other I/O pin at V_R= 3.3 V; f = 1 MHz

0.7

C_D

Among pins 1, 2 and 3

at V_R= 0 V; f = 1 MHz

Line to line capacitance

Line symmetry

0.35

0.5

0.1

Difference of the line capacitance

dC_D

Note

Ratings at 25 °C, ambient temperature unless otherwise specified

•

ELECTRICAL CHARACTERISTICS VBUS053CZ-HAF V_BUS(pin 6) to ground (pin 7)

PARAMETER

TEST CONDITIONS/REMARKS

SYMBOL

MIN.

TYP.

MAX.

UNIT

Protection paths

Number of line which can be protected

at I_R= 100 nA

N_channel

V_RWM

I_R

lines

Reverse working voltage

Reverse current

at V_R= V_RWM= 28 V

100

0.9

Forward voltage

at I_F= 10 mA

V_F

0.6

0.75

Reverse breakdown voltage

at I_R= 1 mA

V_BR

at I_PP= 1 A; acc. IEC 61000-4-5; T = 25 °C

at I_PP= 3 A; acc. IEC 61000-4-5; T = 25 °C

at I_F= 3 A; acc. IEC 61000-4-5

at V_R= 0 V; f = 1 MHz

Reverse clamping voltage

V_C

Forward clamping voltage

Line capacitance

V_F

2.2

C_D

Note

Ratings at 25 °C, ambient temperature unless otherwise specified

•

APPLICATION NOTE

The VBUS053CZ-HAF is intended as an ESD-protection and transient voltage suppressor for one USB-OTG port.

The LLP75-7L package contains two separate dies which are mounted on a common ground plane (pin 7).

The high-speed data lines D-, D+ and ID, are connected to any of the pins no. 1 to 3. As long as the signal voltage on the data

lines is between the ground- and the 5 V working range, the low capacitance PN-diodes offer a very high isolation to ground

and to the other data lines. But as soon as any transient signal like an ESD-signal, exceeds this working range of 5 V in either

the positive or negative direction, one of the PN-diodes gets intothe forward mode and clamps the transient either to ground or

to the avalanche break through level. An extra avalanche diode (separate die) clamps the supply line voltage (V_BUSat pin 6)

above the 28 V working range to ground (pin 7). Due to the “two die construction” the V_BUSline has a very high isolation to the

data lines. In case of a destructive transient signal, i.e. coming from a charger, the data lines will not be influenced.

(pinning top view)

V_BUS

nc.

GND

21103

D- D+ ID

Remark:

The input pins no. 1, 2 and 3 are symmetrical. Each of the data signals D-, D+ and ID can be connected to pin 1, 2 or 3.

www.vishay.com

For technical questions, contact: ESDprotection@vishay.com

This document is subject to change without notice.

Document Number: 85200

Rev. 1.3, 23-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VBUS053CZ-HAF

Vishay Semiconductors

USB-OTG BUS-Port ESD-Protection

for V_BUS= 28 V

TYPICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

120 %

100 %

80 %

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

f = 1 MHz, one I/O pin at 3.3 V

Rise time = 0.7 ns to 1 ns

60 %

53 %

Pin 1, 2 or 3

to pin 7

40 %

27 %

20 %

0 %

- 10 0 10 20 30 40 50 60 70 80 90 100

22080

20557

V_R(V)

Time (ns)

Fig. 1 - ESD Discharge Current Wave Form

Fig. 4 - Typical Capacitance C_Dvs. Reverse Voltage V_R

acc. IEC 61000-4-2 (330 /150 pF)

100

8 µs to 100 %

100 %

80 %

60 %

40 %

20 %

0 %

Pin 6 to pin 7

Pin 1, 2 or 3 to pin 7

20 µs to 50 %

0.1

0.01

0.001

0.5

0.6

0.7

0.8

0.9

1.0

1.1

20548

22409

Time (µs)

V_F(V)

Fig. 2 - 8/20 μs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

Fig. 5 - Typical Forward Current I_Fvs. Forward Voltage V_F

Pin 6 to pin 7

f = 1 MHz

Pin 6 to pin 7

Pin 1, 2 or 3 to pin 7

0.01 0.1

100 1000 10 000

I_R(µA)

22410

V_R(V)

22408

Fig. 3 - Typical Capacitance C_Dvs. Reverse Voltage V_R

Fig. 6 - Typical Reverse Voltage V_Rvs.Reverse Current I_R

Document Number: 85200

Rev. 1.3, 23-May-11

For technical questions, contact: ESDprotection@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VBUS053CZ-HAF

Vishay Semiconductors

USB-OTG BUS-Port ESD-Protection

for V_BUS= 28 V

Measured acc. IEC 61000-4-5 (8/20 µs - wave form)

acc. IEC 61000-4-2

- 8 kV

contact discharge

Pin 1, 2 or 3 to pin 7

Pin 6 to pin 7

V_F

- 10

- 20

- 30

- 40

- 50

- 60

Pin 7 to pin 1, 2 or 3

- 10 0 10 20 30 40 50 60 70 80 90

22083

I_PP(A)

22413

t (ns)

Fig. 7 - Typical Peak Clamping Voltage V_Cvs.

Peak Pulse Current I_PP

Fig. 10 - Typical Clamping Performance at - 8 kV Contact

Discharge (acc. IEC 61000-4-2)

140

Measured acc. IEC 61000-4-5

(8/20 µs - wave form)

acc. IEC 61000-4-2

120

100

+ 8 kV

contact discharge

Pin 6 to pin 7

Pin 1, 2 or 3 to pin 7

V_C

- 20

Pin 7 to pin 6

- 40

- 10 0 10 20 30 40 50 60 70 80 90

I_PP(A)

22411

22414

t (ns)

Fig. 8 - Typical Peak Clamping Voltage V_Cvs.

Peak Pulse Current I_PP

Fig. 11 - Typical Clamping Performance at + 8 kV Contact

Discharge (acc. IEC 61000-4-2)

100

acc. IEC 61000-4-2

+ 8 kV

contact discharge

- 8 kV

contact discharge

- 20

Pin 6 to pin 7

Pin 1, 2 or 3 to pin 7

- 40

- 60

- 80

- 100

- 120

- 20

- 140

- 10 0 10 20 30 40 50 60 70 80 90

22415

22412

t (ns)

Fig. 9 - Typical Clamping Performance at + 8 kV

Contact Discharge (acc. IEC 61000-4-2)

Fig. 12 - Typical Clamping Performance at - 8 kV Contact

Discharge (acc. IEC 61000-4-2)

www.vishay.com

For technical questions, contact: ESDprotection@vishay.com

Document Number: 85200

Rev. 1.3, 23-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VBUS053CZ-HAF

Vishay Semiconductors

USB-OTG BUS-Port ESD-Protection

for V_BUS= 28 V

acc. IEC 61000-4-2

contact discharge

acc. IEC 61000-4-2

contact discharge

Pin 1, 2 or 3 to pin 7

Pin 6 to pin 7

V_C-ESD

t = 30 ns

- 10

- 20

- 30

- 40

t = 30 ns

- 20

- 40

22416

V_ESD(kV)

22417

V_ESD(kV)

Fig. 13 - Typical Clamping Voltage at after 30 ns of ESD

Contact Discharge (acc. IEC 61000-4-2)

Fig. 14 - Typical Clamping Voltage at after 30 ns of ESD

Contact Discharge (acc. IEC 61000-4-2)

PACKAGE DIMENSIONS in millimeters (inches): LLP75-7L

Heat sink

0.5 (0.020)

0.6 (0.024)

0.25 (0.010)

1.65 (0.065)

1.55 (0.061)

Pin 1 marking

Foot print recommendation:

0.5 (0.020)

0.3 (0.012)

0.15 (0.006)

0.5 (0.020)

0.3 (0.012)

0.15 (0.006)

Solder resist mask

Document no.:S8-V-3906.02-014 (4)

Solder pad

0.5 (0.020)

Created - Date: 04. April 2006

20500

Document Number: 85200

Rev. 1.3, 23-May-11

For technical questions, contact: ESDprotection@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical

requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements

about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular

product with the properties described in the product specification is suitable for use in a particular application. Parameters

provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree

to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and

damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay

or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to

obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by

any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 11-Mar-11

型号:	VBUS053CZ-HAF-G-08
生命周期：	Active
IHS 制造商：	VISHAY SEMICONDUCTORS
包装说明：	R-PDSO-N6
针数：	6
制造商包装代码：	LLP75-7L
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
风险等级：	1.58
Is Samacsys：	N
其他特性：	LOW CAPACITANCE
最大击穿电压：	10 V
最小击穿电压：	6.5 V
击穿电压标称值：	8.25 V
外壳连接：	ANODE
最大钳位电压：	15 V
配置：	COMMON ANODE, 2 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-PDSO-N6
最大非重复峰值反向功率耗散：	36 W
元件数量：	2
端子数量：	6
最高工作温度：	125 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL
认证状态：	Not Qualified
参考标准：	IEC-61000-4-2, 4-5
最大重复峰值反向电压：	5.5 V
子类别：	Transient Suppressors
表面贴装：	YES
技术：	AVALANCHE
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

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