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产品型号VN2210N2的Datasheet PDF文件预览

VN2210

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

I_D(ON)

(min)

BV_DGS

(max)

TO-39

TO-92

100V

0.35Ω

VN2210N2

VN2210N3

^†MIL visual screening available

Advanced DMOS Technology

Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

These enhancement-mode (normally-off) transistors utilize a

verticalDMOSstructureandSupertex’swell-provensilicon-gate

manufacturingprocess.Thiscombinationproducesdeviceswith

thepowerhandlingcapabilitiesofbipolartransistorsandwiththe

high input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS structures,

these devices are free from thermal runaway and thermally-

induced secondary breakdown.

❏ Low C_ISSand fast switching speeds

❏ Excellent thermal stability

❏ Integral Source-Drain diode

Supertex’sverticalDMOSFETsareideallysuitedtoawiderange

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

❏ High input impedance and high gain

❏ Complementary N- and P-channel devices

Applications

❏ Motor controls

❏ Converters

Package Options

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

BV_DSS

BV_DGS

± 20V

S G D

Drain-to-Gate Voltage

Gate-to-Source Voltage

TO-39

Case: DRAIN

TO-92

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

07/08/02

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

VN2210

Thermal Characteristics

Package

I_D(continuous)*

I_D(pulsed)

Power Dissipation

θ_jc

θ_ja

I_DR

I_DRM

@ T_C= 25°C

°C/W

TO-92

TO-39

1.2A

1.7A

8.0A

1.0W

6.0W

125

170

125

1.2A

1.7A

8.0A

10.0A

* I_D(continuous) is limited by max rated T_j.

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol

Parameter

Min

100

0.8

Typ

Max

Unit

Conditions

Drain-to-Source

BV_DSS

V_GS= 0V, I_D= 10mA

Breakdown Voltage

V_GS(th)

∆V_GS(th)

I_GSS

Gate Threshold Voltage

2.4

-5.5

100

mV/°C

V_GS= V_DS, I_D= 10mA

V_GS= ±20V, V_DS= 0V

Change in V_GS(th)with Temperature

Gate Body Leakage

-4.3

I_DSS

Zero Gate Voltage Drain Current

µA

V_GS= 0V, V_DS= Max Rating

V_GS= 0V, V_DS= 0.8 Max Rating

T_A= 125°C

I_D(ON)

ON-State Drain Current

4.5

V_GS= 5V, V_DS= 25V

V_GS= 10V, V_DS= 25V

R_DS(ON)

0.4

0.5

0.35

1.2

V_GS= 5V, I_D= 1A

V_GS= 10V, I_D= 4A

V_DS= 25V, I_D= 2A

Static Drain-to-Source

ON-State Resistance

Ω

0.27

0.85

∆R_DS(ON)

G_FS

C_ISS

C_OSS

C_RSS

t_d(ON)

t_r

Change in R_DS(ON)with Temperature

Forward Transconductance

Input Capacitance

%/°C

Ω

1.2

300

125

500

200

V_GS= 0V, V_DS= 25V

f = 1 MHz

Common Source Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

V_DD= 25V

I_D= 2A

R_GEN= 10Ω

Rise Time

t_d(OFF)

t_f

Turn-OFF Delay Time

Fall Time

V_SD

t_rr

Diode Forward Voltage Drop

Reverse Recovery Time

1.0

500

1.6

V_GS= 0V, I_SD= 4A

V_GS= 0V, I_SD= 1A

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

V_DD

R_L

10V

90%

PULSE

GENERATOR

INPUT

OUTPUT

10%

R_gen

t_(ON)

t_d(ON)

t_(OFF)

t_d(OFF)

t_r

t_F

D.U.T.

V_DD

INPUT

10%

OUTPUT

90%

VN2210

Typical Performance Curves

Output Characteristics

Saturation Characteristics

= 10V

4.0

100

V_DS(volts)

Transconductance vs. Drain Current

Power Dissipation vs. Case Temperature

4.0

3.2

2.4

1.6

0.8

= 25V

TO-39

= -55°C

25°C

150°C

TO-92

2.4

3.2

100

125

150

0.8

1.6

I_D(amperes)

T_C(°C)

Maximum Rated Safe Operating Area

Thermal Response Characteristics

1.0

0.8

0.6

0.4

0.2

TO-92 (pulsed)

TO-39

(pulsed)

TO-39 (DC)

TO-92 (DC)

0.1

TO-92

T_C= 25°C

P_D= 1W

= 25°C

0.01

0.1

0.001

0.01

0.1

V_DS(volts)

t_P(seconds)

VN2210

Typical Performance Curves

BV_DSSVariation with Temperature

On-Resistance vs. Drain Current

1.0

0.8

0.6

0.4

0.2

1.1

= 5V

= 10V

1.0

0.9

-50

100

150

I_D(amperes)

T_j(°C)

Transfer Characteristics

= 25V

V_GS(th)and R _DS(ON)Variation with Temperature

1.2

1.1

1.0

0.9

0.8

0.7

2.0

1.6

1.2

0.8

0.4

@ 10V, 4A

DS(ON)

= -55°C

25°C

150°C

@ 10mA

GS(th)

-50

100

150

V_GS(volts)

T_j(°C)

Capacitance vs. Drain-to-Source Voltage

f = 1MHz

Gate Drive Dynamic Characteristics

500

375

= 10V

ISS

900 pF

250

125

= 40V

OSS

300 pF

RSS

Q_G(nanocoulombs)

V_DS(volts)

07/08/02

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895

电子百科

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