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产品型号VS-ETH3006FP-M3的Datasheet PDF文件预览

VS-ETH3006-M3, VS-ETH3006FP-M3  
Vishay Semiconductors  
Hyperfast Rectifier, 30 A FRED Pt®  
FEATURES  
• Hyperfast soft recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
• Low leakage current  
• Fully isolated package (VINS = 2500 VRMS  
• True 2 pin package  
)
2L TO-220AC  
2L TO-220 FULL-PAK  
Base  
cathode  
2
• Compliant to RoHS Directive 2002/95/EC  
• Halogen-free according to IEC 61249-2-21 definition  
• Designed and qualified according to JEDEC-JESD47  
1
3
1
2
DESCRIPTION/APPLICATIONS  
Cathode  
Anode  
Cathode  
Anode  
Hyperfast recovery rectifiers designed with optimized  
performance of forward voltage drop, hyperfast recovery  
time, and soft recovery.  
VS-ETH3006-M3  
VS-ETH3006FP-M3  
PRODUCT SUMMARY  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
Package  
2L TO-220AC, 2L TO-220FP  
IF(AV)  
30 A  
600 V  
VR  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
VF at IF  
2.65 V  
27 ns  
trr (typ.)  
TJ max.  
Diode variation  
The extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
VRRM  
600  
V
TC = 131 °C  
C = 51 °C  
TJ = 25 °C  
Average rectified forward current in DC  
IF(AV)  
30  
FULL-PAK  
T
A
Non-repetitive peak surge current  
IFSM  
180  
Operating junction and storage temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 30 A  
600  
-
-
V
-
-
-
-
-
-
2.0  
1.4  
0.02  
50  
2.65  
1.8  
30  
300  
-
Forward voltage  
VF  
IR  
IF = 30 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
20  
pF  
nH  
Measured lead to lead 5 mm from package body  
8
-
Document Number: 93523  
Revision: 18-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETH3006-M3, VS-ETH3006FP-M3  
Hyperfast Rectifier, 30 A FRED Pt®  
Vishay Semiconductors  
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V  
TJ = 25 °C  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
-
-
-
-
26  
35  
-
Reverse recovery time  
trr  
26  
ns  
TJ = 125 °C  
70  
-
IF = 30 A  
TJ = 25 °C  
3.5  
7.6  
50  
-
Peak recovery current  
IRRM  
dIF/dt = 200 A/μs  
TJ = 125 °C  
A
-
V
R = 200 V  
TJ = 25 °C  
-
Reverse recovery charge  
Qrr  
nC  
TJ = 125 °C  
280  
-
THERMAL - MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Maximum junction and storage  
temperature range  
TJ, TStg  
- 65  
-
175  
°C  
-
-
0.84  
3.2  
1.3  
3.8  
Thermal resistance,  
junction to case  
RthJC  
FULL-PAK  
Thermal resistance,  
junction to ambient  
°C/W  
RthJA  
RthCS  
Typical socket mount  
-
-
-
70  
-
Typical thermal resistance,  
case to heatsink  
Mounting surface, flat, smooth and  
greased  
0.5  
-
-
2
-
-
g
Weight  
0.07  
oz.  
6
(5)  
12  
(10)  
kgf · cm  
(lbf · in)  
Mounting torque  
Marking device  
-
Case style 2L TO-220AC  
ETH3006  
ETH3006FP  
Case style 2L TO-220 FULL-PAK  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 93523  
Revision: 18-Apr-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETH3006-M3, VS-ETH3006FP-M3  
Hyperfast Rectifier, 30 A FRED Pt®  
Vishay Semiconductors  
1000  
100  
1000  
100  
10  
175°C  
150°C  
125°C  
100°C  
75°C  
50°C  
10  
1
0.1  
0.01  
0.001  
0.0001  
25°C  
Tj = 175°C  
0
100  
200  
300  
400  
500  
600  
ReverseVoltage-VR(V)  
Fig. 2 - Typical Values of Reverse Current vs.  
Reverse Voltage  
1000  
Tj = 150°C  
100  
10  
1
Tj = 25°C  
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5  
Forward Voltage Drop-VF (V)  
0
100  
200  
300  
400  
500  
600  
ReverseVoltage-VR(V)  
Fig. 3 - Typical Junction Capacitance vs.  
Reverse Voltage  
Fig. 1 - Typical Forward Voltage Drop Characteristics  
10  
D = 0.5  
1
0.1  
D = 0.2  
D = 0.1  
D = 0.05  
D = 0.02  
D = 0.01  
Single Pulse  
(Thermal Resistance)  
0.01  
1E-05  
1E-04  
1E-03  
1E-02  
1E-01  
1E+00  
t1,RectangularPulseDuration(Seconds)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics  
Document Number: 93523  
Revision: 18-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
3
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETH3006-M3, VS-ETH3006FP-M3  
Hyperfast Rectifier, 30 A FRED Pt®  
Vishay Semiconductors  
10  
D = 0.5  
D = 0.2  
D = 0.1  
1
D = 0.05  
Single Pulse  
(Thermal Resistance)  
D = 0.02  
D = 0.01  
0.1  
1E-05  
1E-04  
1E-03  
1E-02  
1E-01  
1E+00  
1E+01  
1E+02  
t1,RectangularPulseDuration(Seconds)  
Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK)  
180  
160  
140  
120  
100  
180  
170  
160  
150  
140  
130  
120  
80  
DC  
DC  
60  
40  
20  
0
5
10 15 20 25 30 35  
0
5
10 15 20 25 30 35  
AverageForwardCurrent-IF(AV)(A)  
AverageForwardCurrent-IF(AV)(A)  
Fig. 6 - Maximum Allowable Case Temperature vs.  
Average Forward Current  
Fig. 7 - Maximum Allowable Case Temperature vs.  
Average Forward Current (FULL-PAK)  
80  
60  
40  
20  
0
RMS Limit  
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.1  
D = 0.2  
D = 0.5  
DC  
0
5
10 15 20 25 30 35 40 45  
AverageForwardCurrent-IF(AV)(A)  
Fig. 8 - Forward Power Loss Characteristics  
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 93523  
Revision: 18-Apr-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETH3006-M3, VS-ETH3006FP-M3  
Hyperfast Rectifier, 30 A FRED Pt®  
Vishay Semiconductors  
90  
80  
70  
60  
50  
40  
30  
20  
10  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
If = 30 A, 125°C  
If = 30 A, 125°C  
If = 30 A, 25°C  
typical value  
If = 30 A, 25°C  
typical value  
100  
1000  
100  
1000  
di F /dt (A/µs)  
Fig. 9 - Typical Reverse Recovery vs. dIF/dt  
diF/dt (A/µs)  
Fig. 10 - Typical Stored Charge vs. dIF/dt  
VR = 200 V  
0.01 Ω  
L = 70 μH  
D.U.T.  
D
dIF/dt  
adjust  
IRFP250  
G
S
Fig. 11 - Reverse Recovery Parameter Test Circuit  
(3)  
trr  
IF  
ta  
tb  
0
(4)  
Qrr  
(2)  
IRRM  
0.5 IRRM  
(5)  
dI(rec)M/dt  
0.75 IRRM  
dIF/dt  
(1)  
(4) Qrr - area under curve defined by trr  
(1) dIF/dt - rate of change of current  
and IRRM  
through zero crossing  
trr x IRRM  
(2) IRRM - peak reverse recovery current  
Qrr  
=
2
(3) trr - reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current.  
(5) dI(rec)M/dt - peak rate of change of  
current during tb portion of trr  
Fig. 12 - Reverse Recovery Waveform and Definitions  
Document Number: 93523  
Revision: 18-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
5
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
VS-ETH3006-M3, VS-ETH3006FP-M3  
Hyperfast Rectifier, 30 A FRED Pt®  
Vishay Semiconductors  
ORDERING INFORMATION TABLE  
Device code  
VS-  
E
T
H
30  
06  
FP -M3  
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product  
Circuit configuration:  
E = Single diode  
2
-
3
4
5
6
7
-
-
-
-
-
T = TO-220  
H = Hyperfast recovery time  
Current code: 30 = 30 A  
Voltage code: 06 = 600 V  
None = TO-220  
FP = FULL-PAK  
Environmental digit:  
8
-
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
VS-ETH3006-M3  
VS-ETH3006FP-M3  
QUANTITY PER TUBE  
MINIMUM ORDER QUANTITY  
PACKAGING DESCRIPTION  
Antistatic plastic tube  
50  
50  
1000  
1000  
Antistatic plastic tube  
LINKS TO RELATED DOCUMENTS  
2L TO-220AC  
www.vishay.com/doc?95259  
Dimensions  
2L TO-220 FULL-PAK  
2L TO-220AC  
www.vishay.com/doc?95260  
www.vishay.com/doc?95391  
www.vishay.com/doc?95392  
Part marking information  
2L TO-220 FULL-PAK  
www.vishay.com  
6
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 93523  
Revision: 18-Apr-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
www.vishay.com  
True 2 Pin TO-220  
DIMENSIONS in millimeters and inches  
0.002"  
A
0.05 mm  
A
E
Ø P  
F
B
Q
H1  
D
Term. 4  
0.150" REF.  
45°  
Ø 2.0 mm REF.  
L1  
b1  
L
b
c
60°  
1
2
J1  
e
MILLIMETERS  
MAX.  
4.57  
INCHES  
SYMBOL  
MIN.  
4.32  
0.71  
1.15  
0.36  
MIN.  
0.170  
0.028  
0.045  
0.014  
0.590  
0.395  
MAX.  
0.180  
0.036  
0.055  
0.021  
0.610  
0.410  
A
b
0.91  
b1  
c
1.39  
0.53  
D
E
14.99  
10.04  
15.49  
10.41  
5.08 BSC  
1.37  
e
0.200 BSC  
F
1.22  
5.97  
2.54  
13.47  
3.31  
3.79  
2.60  
0.048  
0.235  
0.100  
0.530  
0.130  
0.149  
0.102  
0.054  
0.255  
0.110  
0.550  
0.150  
0.153  
0.112  
H1  
J1  
L
6.47  
2.79  
13.97  
3.81  
(1)  
L1  
Ø P  
Q
3.88  
2.84  
Notes  
(1)  
Lead dimension and finish uncontrolled in L1  
These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87  
Controling dimension: Inch  
Revision: 05-Dec-12  
Document Number: 95259  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Outline Dimensions  
Vishay Semiconductors  
www.vishay.com  
True 2 Pin TO-220 FULL-PAK  
DIMENSIONS in millimeters and inches  
A
Ø Q  
F
E
Q1  
H1  
D
Q2  
θ
L1  
b1  
L
b
C
e
J1  
MILLIMETERS  
INCHES  
SYMBOL  
MIN.  
MAX.  
4.93  
MIN.  
0.178  
0.028  
0.045  
0.014  
0.617  
0.392  
MAX.  
0.194  
0.036  
0.055  
0.021  
0.633  
0.408  
A
b
4.53  
0.71  
1.15  
0.36  
15.67  
9.96  
0.91  
b1  
C
1.39  
0.53  
D
16.07  
10.36  
E
e
5.08 typical  
0.200 typical  
F
2.34  
6.50  
2.56  
12.78  
2.23  
2.98  
3.10  
14.80  
0°  
2.74  
6.90  
2.96  
13.18  
2.63  
3.38  
3.50  
15.20  
5°  
0.092  
0.256  
0.101  
0.503  
0.088  
0.117  
0.122  
0.583  
0°  
0.107  
0.272  
0.117  
0.519  
0.104  
0.133  
0.138  
0.598  
5°  
H1  
J1  
L
L1  
Ø Q  
Q1  
Q2  
Revision: 05-Dec-12  
Document Number: 95260  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please  
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free  
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference  
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21  
conform to JEDEC JS709A standards.  
Revision: 02-Oct-12  
Document Number: 91000  
1
配单直通车
VS-ETH3006FP-M3产品参数
型号:VS-ETH3006FP-M3
生命周期:Active
IHS 制造商:VISHAY SEMICONDUCTORS
零件包装代码:TO-220AC
包装说明:R-PSFM-T2
针数:2
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.10.00.80
风险等级:1.47
Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:HYPERFAST SOFT RECOVERY HIGH POWER
外壳连接:ISOLATED
配置:SINGLE
二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.8 V
JEDEC-95代码:TO-220
JESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:180 A
元件数量:1
相数:1
端子数量:2
最高工作温度:175 °C
最低工作温度:-65 °C
最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified
最大重复峰值反向电压:600 V
最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes
表面贴装:NO
端子形式:THROUGH-HOLE
端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1
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