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VSML3710

Vishay Semiconductors

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm,

GaAlAs/GaAs

FEATURES

• Package type: surface mount

• Package form: PLCC-2

• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75

• Peak wavelength: λ_p= 940 nm

• High reliability

• High radiant power

• High radiant intensity

94 8553

• Angle of half intensity: ϕ = ꢀ0ꢁ

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Package matched with IR emitter series VEMT3700

DESCRIPTION

• Floor life: 4 weeks, MSL 2a, acc. J-STD-020

• Lead (Pb)-free reflow soldering

VSML3710 is an infrared, 940 nm emitting diode in

GaAlAs/GaAs technology with high radiant power, molded in

a PLCC-2 package for surface mounting (SMD).

• Lead (Pb)-free component in accordance with

RoHS 2002/95/EC and WEEE 2002/9ꢀ/EC

APPLICATIONS

• IR emitter in photointerrupters, sensors and reflective

sensors

• IR emitter in low space applications

• Household appliance

• Tactile keyboards

PRODUCT SUMMARY

COMPONENT

I_e(mW/sr)

ϕ (deg)

λ

_P(nm)

t_r(ns)

VSML3710

8

ꢀ0

940

800

Note

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE

VSML3710-GS08

VSML3710-GS18

PACKAGING

REMARKS

PACKAGE FORM

PLCC-2

Tape and reel

MOQ: 7500 pcs, 1500 pcs/reel

MOQ: 8000 pcs, 8000 pcs/reel

PLCC-2

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

5

UNIT

V

Reverse voltage

Forward current

V_R

I_F

100

200

1

mA

A

Peak forward current

Surge forward current

Power dissipation

t_p/T = 0.5, t_p= 100 µs

I_FM

I_FSM

P_V

t_p= 100 µs

1ꢀ0

mW

Document Number: 81300

Rev. 1.3, 04-Sep-08

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

317

VSML3710

High Power Infrared Emitting Diode,

RoHS Compliant, 940 nm, GaAlAs/GaAs

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

T_j

VALUE

100

UNIT

ꢁC

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

T_amb

T_stg

- 40 to + 85

- 40 to + 100

2ꢀ0

ꢁC

acc. figure 11, J-STD-020

T_sd

ꢁC

Thermal resistance junction/ambient

J-STD-051, soldered on PCB

R_thJA

250

K/W

Note

T_amb= 25 ꢁC, unless otherwise specified

120

100

80

180

1ꢀ0

140

120

100

ꢀ0

80

ꢀ0

40

20

0

R_thJA= 250 K/W

40

20

0

10 20 30 40 50 ꢀ0 70 80 90 100

T_amb- Ambient Temperature (ꢁC)

0

10 20 30 40 50 ꢀ0 70 80 90 100

T_amb- Ambient Temperature (ꢁC)

21344

21343

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

1.35

2.ꢀ

MAX.

1.ꢀ

UNIT

V

I_F= 100 mA, t_p= 20 ms

I_F= 1 A, t_p= 100 µs

I_F= 1 mA

V_F

TK_VF

I_R

Forward voltage

3.0

V

Temperature coefficient of V_F

Reverse current

- 1.8

mV/K

µA

V

_R= 5 V

100

20

Junction capacitance

V

_R= 0 V, f = 1 MHz, E = 0

C_j

25

8

pF

I_F= 100 mA, t_p= 20 ms

I_F= 1 A, t_p= 100 µs

I_F= 100 mA, t_p= 20 ms

I_F= 100 mA

I_e

4

mW/sr

mW

%/K

deg

nm

Radiant intensity

I_e

ꢀ0

Radiant power

φ_e

35

Temperature coefficient of φ_e

Angle of half intensity

Peak wavelength

TKφ_e

ϕ

- 0.ꢀ

ꢀ0

I_F= 100 mA

I_F= 20 mA

I_F= 1 A

λ_p

Δλ

TKλ_p

t_r

940

50

Spectral bandwidth

nm

Temperature coefficient of λ_p

0.2

800

500

800

500

0.44

nm/K

ns

Rise time

t_r

ns

I_F= 20 mA

I_F= 1 A

t_f

ns

Fall time

t_f

ns

Virtual source diameter

d

mm

Note

T_amb= 25 ꢁC, unless otherwise specified

www.vishay.com

318

For technical questions, contact: emittertechsupport@vishay.com

Document Number: 81300

Rev. 1.3, 04-Sep-08

VSML3710

High Power Infrared Emitting Diode,

RoHS Compliant, 940 nm, GaAlAs/GaAs

Vishay Semiconductors

BASIC CHARACTERISTICS

T_amb= 25 ꢁC, unless otherwise specified

10 000

100

10

T

< ꢀ0 ꢁC

0.05

amb

t /T = 0.005

p

0.01

1000

100

0.02

0.2

0.5

DC

1

0.1

10

1

0.1

10⁰

100

10¹

I_F- Forward Current (mA)

10²

10³

10⁴

0.01

0.1

1

10

t_p- Pulse Length (ms)

95 9985

15903

Fig. 3 - Pulse Forward Current vs. Pulse Duration

Fig. ꢀ - Radiant Intensity vs. Forward Current

10⁴

10³

1000

100

10

10²

t_P= 100 µs

t_P/T = 0.001

10¹

1

10⁰

0.1

10⁰

1

0

2

3

4

10¹

10²

10³

10⁴

V_F- Forward Voltage (V)

13ꢀ00

I_F- Forward Current (mA)

94 8740

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 7 - Radiant Power vs. Forward Current

1.ꢀ

1.2

I_F= 1 mA

1.1

1.2

I_F= 20 mA

1.0

0.9

0.8

0.7

0.8

0.4

0

140

0

10 20 30 40 50 ꢀ0 70 80 90 100

T_amb- Ambient Temperature (ꢁC)

- 10 0 10

50

100

1ꢀ848

T_amb- Ambient Temperature (ꢁC)

94 7993

Fig. 5 - Forward Voltage vs. Ambient Temperature

Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature

Document Number: 81300

Rev. 1.3, 04-Sep-08

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

319

VSML3710

High Power Infrared Emitting Diode,

RoHS Compliant, 940 nm, GaAlAs/GaAs

Vishay Semiconductors

0ꢁ

10ꢁ

20ꢁ

1.25

1.0

30ꢁ

40ꢁ

1.0

0.9

0.75

0.5

50ꢁ

ꢀ0ꢁ

0.8

0.25

70ꢁ

0.7

I_F= 100 mA

80ꢁ

0

890

990

940

- Wavelength (nm)

0.ꢀ 0.4 0.2

0

94 8013

14291

λ

Fig. 9 - Relative Radiant Power vs. Wavelength

Fig. 10 - Relative Radiant Intensity vs. Angular Displacement

PACKAGE DIMENSIONS in millimeters

3.5 0.2

Pin identification

Mounting Pad Layout

1.2

area covered with

solder resist

C

A

4

1.ꢀ (1.9)

Ø 2.4

3 + 0.15

20541

SOLDER PROFILE

DRYPACK

300

Devices are packed in moisture barrier bags (MBB) to

prevent the products from moisture absorption during

transportation and storage. Each bag contains a desiccant.

max. 2ꢀ0 ꢁC

255 ꢁC

250

200

150

100

50

245 ꢁC

240 ꢁC

217 ꢁC

FLOOR LIFE

max. 30 s

Floor life (time between soldering and removing from MBB)

must not exceed the time indicated on MBB label:

Floor life: 4 weeks

Conditions: T_amb< 30 ꢁC, RH < ꢀ0 %

Moisture sensitivity level 2a, acc. to J-STD-020.

max. 100 s

max. 120 s

max. ramp down ꢀ ꢁC/s

max. ramp up 3 ꢁC/s

0

DRYING

0

50

100

150

200

250

300

In case of moisture absorption devices should be baked

before soldering. Conditions see J-STD-020 or label.

Devices taped on reel dry using recommended conditions

192 h at 40 ꢁC (+ 5 ꢁC), RH < 5 %.

19841

Time (s)

Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D

www.vishay.com

320

For technical questions, contact: emittertechsupport@vishay.com

Document Number: 81300

Rev. 1.3, 04-Sep-08

VSML3710

High Power Infrared Emitting Diode,

RoHS Compliant, 940 nm, GaAlAs/GaAs

Vishay Semiconductors

The tape leader is at least 1ꢀ0 mm and is followed by a

carrier tape leader with at least 40 empty compartments. The

tape leader may include the carrier tape as long as the cover

tape is not connected to the carrier tape. The least

component is followed by a carrier tape trailer with a least 75

empty compartments and sealed with cover tape.

TAPE AND REEL

PLCC-2 components are packed in antistatic blister tape

(DIN IEC (CO) 5ꢀ4) for automatic component insertion.

Cavities of blister tape are covered with adhesive tape.

Adhesive tape

10.0

9.0

120ꢁ

4.5

3.5

Blister tape

13.00

12.75

2.5

1.5

ꢀ3.5

ꢀ0.5

Identification

Label:

Vishay

type

group

Component cavity

94 8ꢀ70

tape code

production

code

14.4 max.

180

178

Fig. 12 - Blister Tape

quantity

94 8ꢀꢀ5

3.5

3.1

2.2

2.0

Fig. 15 - Dimensions of Reel-GS08

10.4

8.4

5.75

5.25

4.0

3.ꢀ

120ꢁ

8.3

7.7

3.ꢀ

3.4

4.5

3.5

13.00

12.75

2.5

1.5

1.85

1.ꢀ5

ꢀ2.5

ꢀ0.0

0.25

1.ꢀ

1.4

4.1

3.9

4.1

3.9

Identification

2.05

1.95

Label:

Vishay

type

94 8ꢀꢀ8

group

tape code

production

code

Fig. 13 - Tape Dimensions in mm for PLCC-2

14.4 max.

321

329

MISSING DEVICES

quantity

18857

A maximum of 0.5 % of the total number of components per

reel may be missing, exclusively missing components at the

beginning and at the end of the reel. A maximum of three

consecutive components may be missing, provided this gap

is followed by six consecutive components.

Fig. 1ꢀ - Dimensions of Reel-GS18

COVER TAPE REMOVAL FORCE

The removal force lies between 0.1 N and 1.0 N at a removal

speed of 5 mm/s. In order to prevent components from

popping out of the blisters, the cover tape must be pulled off

at an angle of 180ꢁ with regard to the feed direction.

De-reeling direction

94 8158

> 1ꢀ0 mm

40 empty

compartments

min. 75 empty

compartments

Tape leader

Carrier leader

Carrier trailer

Fig. 14 - Beginning and End of Reel

Document Number: 81300

Rev. 1.3, 04-Sep-08

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

321

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

1

型号:	VSML3710-GS08
是否无铅：	不含铅
生命周期：	Active
IHS 制造商：	VISHAY SEMICONDUCTORS
Reach Compliance Code：	unknown
HTS代码：	8541.40.20.00
风险等级：	1.43
Samacsys Confidence：	4
Samacsys Status：	Released
Samacsys PartID：	646624
Samacsys Pin Count：	2
Samacsys Part Category：	LED
Samacsys Package Category：	LED Moulded
Samacsys Footprint Name：	SMD LED PLCC-2
Samacsys Released Date：	2018-02-14 18:05:29
Is Samacsys：	N
其他特性：	HIGH RELIABILITY
配置：	SINGLE
最大正向电流：	0.1 A
JESD-609代码：	e3
功能数量：	1
最高工作温度：	85 °C
最低工作温度：	-40 °C
光电设备类型：	INFRARED LED
标称输出功率：	35 mW
峰值波长：	940 nm
形状：	ROUND
尺寸：	2.4 mm
端子面层：	Matte Tin (Sn)
Base Number Matches：	1

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