WFF7N60现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

Wisdom Semiconductor

WFF7N60

N-Channel MOSFET

Features

{

2. Drain

Symbol

■ R

(Max 1.2 Ω )@V =10V

DS(on)

GS

●

■ Gate Charge (Typical 28nC)

◀

▲

■ Improved dv/dt Capability, High Ruggedness

■ 100% Avalanche Tested

●

1. Gate

{

●

■ Maximum Junction Temperature Range (150°C)

3. Source

{

General Description

TO-220F

This Power MOSFET is produced using Wisdom’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. These devices are well suited

for high efficiency switch mode power supplies, active power factor

correction, electronic lamp ballasts based on half bridge topology.

2

1

3

Absolute Maximum Ratings

(*

Drain current limited by junction temperature)

Symbol

Parameter

Value

600

Units

V_DSS

Drain to Source Voltage

V

A

Continuous Drain Current(@T_C= 25°C)

Continuous Drain Current(@T_C= 100°C)

Drain Current Pulsed

7.0*

I_D

4.4*

28*

A

V

I_DM

(Note 1)

V_GS

Gate to Source Voltage

±30

420

E_AS

E_AR

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note 2)

(Note 1)

(Note 3)

mJ

14.7

dv/dt

4.5

V/ns

W

Total Power Dissipation(@T_C= 25 °C)

48

P_D

Derating Factor above 25 °C

0.38

W/°C

°C

T

_STG,T_J

T_L

Operating Junction Temperature & Storage Temperature

- 55 ~ 150

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

300

°C

Thermal Characteristics

Value

Symbol

Parameter

Units

Min.

Typ.

Max.

2.6

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

-

°C/W

62.5

WFF7N60

Electrical Characteristics ( T_C= 25 °C unless otherwise noted )

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

V_GS= 0V, I_D= 250uA

I_D= 250uA, referenced to 25 °C

Drain-Source Breakdown Voltage

600

-

V

Δ BV_DSS

/

Breakdown Voltage Temperature

coefficient

0.6

V/°C

Δ T_J

V

_DS= 600V, V_GS= 0V

V_DS= 480V, T_C= 125 °C

_GS= 30V, V_DS= 0V

V_GS= -30V, V_DS= 0V

-

10

uA

nA

I_DSS

Drain-Source Leakage Current

100

-100

V

Gate-Source Leakage, Forward

Gate-source Leakage, Reverse

I_GSS

On Characteristics

V_GS(th)

V

_DS= V_GS, I_D= 250uA

_GS=10 V, I_D= 3.5A

Gate Threshold Voltage

2.0

-

4.0

1.2

V

Static Drain-Source On-state Resis-

tance

R_DS(ON)

1.0

Ω

Dynamic Characteristics

C_iss

Input Capacitance

-

1100

110

12

1500

150

16

pF

C_oss

C_rss

Output Capacitance

V_GS=0 V, V_DS=25V, f = 1MHz

Reverse Transfer Capacitance

Dynamic Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-on Delay Time

Rise Time

-

15

30

110

40

28

5

40

70

230

90

37

-

V

_DD=300V, I_D=7.0A, R_G=25Ω

(Note 4, 5)

ns

Turn-off Delay Time

Fall Time

Q_g

Total Gate Charge

Gate-Source Charge

V_DS=480V, V_GS=10V, I_D=7.0A

(Note 4, 5)

Q_gs

nC

Q_gd

Gate-Drain Charge(Miller Charge)

-

11

-

Source-Drain Diode Ratings and Characteristics

Symbol

I_S

Parameter

Test Conditions

Min.

Typ.

Max.

7.0

Unit.

Continuous Source Current

Pulsed Source Current

Diode Forward Voltage

Integral Reverse p-n Junction

Diode in the MOSFET

-

A

I_SM

28

V_SD

I_S=7.0A, V_GS=0V

1.4

V

t_rr

Reverse Recovery Time

-

365

3.4

-

ns

uC

I_S=7.0A, V_GS=0V, dI_F/dt=100A/us

Q_rr

Reverse Recovery Charge

※ NOTES

1. Repeativity rating : pulse width limited by junction temperature

2. L = 15.7mH, I_AS=7A, V_DD= 50V, R_G= 25Ω , Starting T_J= 25°C

3. I_SD≤ 7A, di/dt ≤ 200A/us, V_DD≤ BV_DSS, Starting T_J= 25°C

4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%

5. Essentially independent of operating temperature.

Typical Characteristics

V_GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

10¹

Bottom: 5.0 V

150^oC

25^oC

10⁰

-55^oC

※Notes :

1. V_DS= 40V

2. 250µ s Pulse Test

※Notes :

1. 250µ s Pulse Test

2. T_C= 25℃

-1

10

-1

10

-1

10

10⁰

10¹

2

4

6

8

10

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

5

4

3

2

1

0

10¹

V_GS= 10V

V_GS= 20V

10⁰

150℃

25℃

※Notes :

1. V_GS= 0V

2. 250µ s Pulse Test

※Note : T = 25℃

J

-1

10

0

5

10

15

20

25

0.2

0.4

0.6

0.8

1.0

1.2

1.4

I_D, Drain Current [A]

V_SD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

2000

1500

1000

500

0

12

10

8

C

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

_rss= C_gd

V_DS= 120V

V_DS= 300V

C

iss

V_DS= 480V

6

C

oss

4

※ Notes :

1. V_GS= 0 V

2. f = 1 MHz

C

rss

2

※ Note : I_D= 7.0 A

0

-1

10

10⁰

10¹

0

5

10

15

20

25

30

35

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Typical Characteristics (Continued)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.2

1.1

1.0

※Notes :

1. V_GS= 0 V

2. I_D= 250 µ A

0.9

※Notes :

1. V = 10 V

2. I_D^G=^S3.5 A

0.8

-100

-50

0

50

100

150

200

-50

0

50

100

150

200

T, Junction Temperature [^oC]

J

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

8

6

4

2

0

10²

Operation in This Area

is Limited by R _DS(on)

10 µs

100 µs

10¹

10⁰

1 ms

10 ms

DC

-1

10

※Notes :

1. T_C= 25 ^o

C

2. T = 150 ^o

C

J

3. Single Pulse

-2

10

10⁰

10¹

10²

10³

25

50

75

100

125

150

T_C, Case Temperature [℃]

V_DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

10⁰

D = 0 .5

※

N otes

1.

:

Z

(t) = 0.85 ℃ /W M ax.

2. D^θu^Jt^Cy Factor, D =t₁/t₂

0 .2

3. T_JM

-

T_C

=

P _DM* Z_{θ JC}(t)

10^-1

0 .1

0 .05

P_DM

0 .02

0 .0 1

t₁

s in g le p u lse

t₂

10^-2

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t₁, S quare W ave P ulse D uration [sec]

Figure 11. Transient Thermal Response Curve

Gate Charge Test Circuit & Waveform

V

GS

SameType

asDUT

50KΩ

Q

g

12V

200nF

3mA

10V

300nF

V

DS

V

GS

Q

gs

Q

gd

DUT

Charge

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

BV

DSS

---- --------------------

L

1

EE= LI

2

AS

V

DS

BV -V

DSS DD

BV

DSS

I

I_D

AS

R

G

V

DD

I(t)

D

V

DD

V(t)

DS

DUT

10V

t_p

Time

Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

D

U

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V

D

S

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Package Dimensions

TO-220F

2.54 0.20

(0.70)

10.16 0.20

(7.00)

ø3.18 0.10

(1.00x45°)

MAX1.47

0.80 0.10

#1

0.35 0.10

+0.10

–0.05

0.50

2.76 0.20

2.54TYP

[2.54 0.20]

9.40 0.20

型号:	WFH160
生命周期：	Active
IHS 制造商：	OHMITE MANUFACTURING CO
包装说明：	,
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8533.21.00.80
风险等级：	5.73
其他特性：	RATED AC VOLTAGE: 1200V
安装特点：	CHASSIS MOUNT
端子数量：	2
封装形状：	RECTANGULAR PACKAGE
额定功率耗散 (P)：	160 W
额定温度：	40 °C
电阻器类型：	FIXED RESISTOR
子类别：	Fixed Resistors
表面贴装：	NO
技术：	WIRE WOUND
端子形状：	LUG
Base Number Matches：	1

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