WFP740
Silicon N-Channel MOSFET
Features
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10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V
Ultra-low Gate Charge(Typical 60nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
Value
400
10
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
A
ID
6.3
A
IDM
VGS
EAS
(Note1)
40
A
Gate to Source Voltage
±30
450
13
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
(Note2)
(Note1)
(Note3)
mJ
mJ
V/ ns
W
EAR
dv/dt
Peak Diode Recovery dv /dt
4
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
134
1.0
PD
W/℃
℃
TJ,Tstg
TL
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
-55~150
300
℃
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
0.93
-
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance, Case- to -Sink
-
-
-
-
0.5
-
℃/W
℃/W
℃/W
Thermal Resistance , Junction-to -Ambient
62
Rev.A Sep.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.