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产品型号WFP740的Datasheet PDF文件预览

WFP740  
Silicon N-Channel MOSFET  
Features  
10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V  
Ultra-low Gate Charge(Typical 60nC)  
Fast Switching Capability  
100%Avalanche Tested  
Maximum Junction Temperature Range(150℃)  
General Description  
This Power MOSFET is produced using Winsemi's advanced  
planar stripe,VDMOS technology. This latest technology has been  
especially designed to minimize on -state resistance,have a high  
rugged avalanche characteristics. This devices is specially well  
suited for high efficiency switch model power supplies, power  
factor correction and half bridge and full bridge resonant topology  
line a electronic lamp ballast.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
400  
10  
Units  
V
VDSS  
Drain Source Voltage  
Continuous Drain Current(@Tc=25)  
Continuous Drain Current(@Tc=100)  
Drain Current Pulsed  
A
ID  
6.3  
A
IDM  
VGS  
EAS  
(Note1)  
40  
A
Gate to Source Voltage  
±30  
450  
13  
V
Single Pulsed Avalanche Energy  
Repetitive Avalanche Energy  
(Note2)  
(Note1)  
(Note3)  
mJ  
mJ  
V/ ns  
W
EAR  
dv/dt  
Peak Diode Recovery dv /dt  
4
Total Power Dissipation(@Tc=25)  
Derating Factor above 25℃  
134  
1.0  
PD  
W/℃  
TJ,Tstg  
TL  
Junction and Storage Temperature  
Maximum lead Temperature for soldering purposes  
-55~150  
300  
Thermal Characteristics  
Value  
Symbol  
Parameter  
Units  
Min  
Typ  
Max  
0.93  
-
RQJC  
RQCS  
RQJA  
Thermal Resistance , Junction -to -Case  
Thermal Resistance, Case- to -Sink  
-
-
-
-
0.5  
-
/W  
/W  
/W  
Thermal Resistance , Junction-to -Ambient  
62  
Rev.A Sep.2010  
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.  
WFP740  
Electrical Characteristics(Tc=25)  
Characteristics  
Symbol  
IGSS  
Test Condition  
VGS=±30V,VDS=0V  
IG=±10 µA,VDS=0V  
VDS=400V,VGS=0V  
ID=250 µA,VGS=0V  
ID=250µA, Referenced  
to 25℃  
Min Type Max Unit  
Gate leakage current  
-
-
-
-
-
±100  
nA  
V
Gate-source breakdown voltage  
Drain cut -off current  
V(BR)GSS  
IDSS  
±30  
-
-
25  
-
µA  
V
Drain -source breakdown voltage  
Break voltage Temperature  
Coefficient  
V(BR)DSS  
400  
BVDSS  
TJ  
VGS(th)  
RDS(ON)  
gfs  
/
-
0.4  
-
V/℃  
Gate threshold voltage  
Drain -source ON resistance  
Forward Transconductance  
Input capacitance  
VDS=10V,ID=250 µA  
VGS=10V,ID=5A  
VDS=40V,ID=5A  
VDS=25V,  
2
-
-
-
-
-
-
-
-
-
-
4
0.55  
-
V
S
0.48  
9.6  
1400  
150  
35  
Ciss  
1800  
195  
45  
VGS=0V,  
Reverse transfer capacitance  
Output capacitance  
Crss  
pF  
ns  
f=1MHz  
Coss  
tr  
Rise time  
VDD=200V,  
ID=10A,  
RG=25Ω,  
(Note4,5)  
20  
50  
Turn-on time  
Switching time  
ton  
80  
170  
260  
180  
Fall time  
tf  
125  
85  
Turn-off time  
Total gate charge(gate-source  
plus gate-drain)  
toff  
VDD=320V,  
VGS=10V,  
ID=10A  
Qg  
-
60  
71  
nC  
Gate-source charge  
Qgs  
Qgd  
-
-
7
-
-
(Note4,5)  
Gate-drain("miller") Charge  
27  
Source-Drain Ratings and Characteristics(Ta=25)  
Characteristics  
Continuous drain reverse current  
Pulse drain reverse current  
Forward voltage(diode)  
Symbol  
IDR  
Test Condition  
Min Type Max Unit  
-
-
-
-
-
-
-
-
10  
40  
1.5  
-
A
A
IDRP  
-
VDSF  
trr  
IDR=10A,VGS=0V  
IDR=10A,VGS=0V,  
dIDR / dt =100 A / µs  
1.4  
330  
3.57  
V
Reverse recovery time  
ns  
µC  
Reverse recovery charge  
Qrr  
-
Note 1.Repeativity rating :pulse width limited by junction temperature  
2.L=7.9mH IAS=10A,VDD=50V,RG=0Ω ,Starting TJ=25℃  
3.ISD≤10A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃  
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%  
5. Essentially independent of operating temperature.  
This transistor is an electrostatic sensitive device  
Please handle with caution  
2/7  
Steady, all for your advance  
WFP740  
Fig.1 On-State Characteristics  
Fig.2 Transfer characteristics  
Fig.4 Breakdown voltage Variation  
vs Temperature  
Fig.3 Capacitance Variation vs  
Drain Voltage  
Fig.5 On-Resistance Variation vs  
Junction Temperature  
Fig.6 Gate Charge Characteristics  
3/7  
Steady, all for your advance  
WFP740  
Fig.7 Maximum Safe Operation Area  
Fig.8 Maximum Drain Current vs  
Case Temperature  
Fig.9 Transient Thermal Response curve  
4/7  
Steady, all for your advance  
WFP740  
Fig.10 Gate Test circuit & Waveform  
Fig.11 Resistive Switching Test Circuit & Waveform  
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform  
5/7  
Steady, all for your advance  
WFP740  
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform  
6/7  
Steady, all for your advance  
WFP740  
TO-220 Package Dimension  
Unit:mm  
7/7  
Steady, all for your advance  
配单直通车
WFSKHV/0,5-1,05产品参数
型号:WFSKHV/0,5-1,05
是否Rohs认证: 符合
生命周期:Active
Reach Compliance Code:compliant
风险等级:5.75
端子和端子排类型:PUSH-ON TERMINAL
Base Number Matches:1
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