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产品型号WHAT的Datasheet PDF文件预览

SI96-01  
Surging Ideas  
TVS Diode Application Note  
PROTECTION PRODUCTS  
What Are TVS Diodes?  
electrical parameters as long as the device is operated  
within specified limits.  
TVS diodes are solid state pn junction devices specifi-  
cally designed to protect sensitive semiconductors  
from the damaging effects of transient voltages. TVS  
diode schematic symbols are shown in Figure 1. The  
electrical characteristics of the device are determined  
by factors such as junction area, doping concentration,  
and substrate resistivity. The surge power and surge  
current capability of the TVS diode are proportional to  
the junction area. TVS diodes are constructed with  
large cross sectional area junctions for absorbing high  
transient currents. While the VI characteristic curve of  
the TVS diode is similar to that of a zener diode, TVS  
diodes are specifically designed, characterized, and  
tested for transient voltage suppression. By contrast,  
zener diodes are designed and specified for voltage  
regulation.  
A primary attribute of the TVS diode is its reaction  
time. Avalanche breakdown theoretically occurs in  
picoseconds. This is very difficult to measure however.  
Therefore, TVS diodes are often specified as respond-  
ing “almost instantaneously”. The fast response time  
of the TVS diode means that any voltage overshoot is  
primarily due to lead inductance and PC board traces.  
Unidirectional  
Bidirectional  
TVS diodes serve as parallel protection elements  
(Figure 2). Under normal operating conditions, the TVS  
diode presents a high impedance to the protected  
circuit. Ideally, the device appears as an open circuit,  
although a small amount of leakage current is present.  
When the normal operating voltage of the protected  
circuit is exceeded, the TVS diode junction avalanches  
providing a low impedance path for the transient  
current. As a result, the transient current is diverted  
away from the protected components and shunted  
through the TVS diode. The voltage across the pro-  
tected circuit is limited to the clamping voltage of the  
TVS diode. The device returns to a high impedance  
state after the transient threat passes. TVS diodes will  
not wear out nor will there be any degradation of the  
Figure 1 - TVS Diode Schematic Symbols  
TVS diodes are available in a wide range of operating  
voltages. Traditional device voltages range from 5V to  
440V for discrete devices. Recent innovations in TVS  
technology have yielded devices, such as Semtech’s  
SLV series, which operate at 2.8 and 3.3V.  
The TVS diodes fast response time and low clamping  
voltages make them ideal for use as board level  
protectors for semiconductors and other sensitive  
components. Applications include data and signal  
lines, microprocessors & MOS memory, AC power lines,  
and telecommunication equipment.  
Z in  
Transient  
TRANSIENT  
ENVIRONMENT  
Current  
TVS  
Diode  
PROTECTED  
CIRCUIT  
Figure 2 - TVS Diode Operation  
www.semtech.com  
Revision 9/2000  
1
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