WPM1481-6/TR全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

产品型号WPM1481-6/TR的概述

芯片WPM1481-6/TR的概述 WPM1481-6/TR是一个高度集成的电源管理芯片，专为各种电子应用而设计，尤其在通信、消费电子及工业设备中具有广泛应用。该芯片以其卓越的性能和灵活的设计得到了工程师们的青睐。WPM1481-6/TR采用了先进的制造工艺和电源管理技术，能够在提高转换效率的同时降低功耗。该芯片的核心功能包括但不限于电源转换、稳压、过流和过热保护。其设计目标是提供稳定的输出电压和电流，以满足不同负载的需求。此外，WPM1481-6/TR还具有较高的频率响应，支持快速瞬态负载变换，从而能适应复杂的负载变化情形。这种高效和稳定性让WPM1481-6/TR在市场上占据了有利位置。芯片WPM1481-6/TR的详细参数 WPM1481-6/TR的主要参数如下： - 输入电压范围: 4.5V - 15V - 输出电压调节范围: 0.8V - 12V，支持用户自定义 - 最大...

产品型号WPM2015的Datasheet PDF文件预览

Product specification

WPM2015

Single P-Channel, -20V, -2.4A, Power MOSFET

V_DS(V)

Rds(on) (ȍ)

0.081@ V_GS=ꢀ4.5V

0.103@ V_GS=ꢀ2.5V

-20

SOT-23

Descriptions

D

3

The WPM2015 is P-Channel enhancement

MOS Field Effect Transistor. Uses advanced trench

technology and design to provide excellent R_{DS (ON)}

with low gate charge. This device is suitable for use

in DC-DC conversion, power switch and charging

circuit. Standard Product WPM2015 is Pb-free and

Halogen-free.

1

G

2

S

Pin configuration (Top view)

3

Features

WT1*

z

Trench Technology

Supper high density cell design

Excellent ON resistance for higher DC current

Extremely Low Threshold Voltage

Small package SOT-23

1

2

WT1= Device Code

*

= Month (A~Z)

Marking

Applications

Order information

z

Driver for Relay, Solenoid, Motor, LED etc.

Device

Package

Shipping

3000/Reel&Tape

WPM2015-3/TR

SOT-23

DC-DC converter circuit

Power Switch

Load Switch

Charging

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Product specification

WPM2015

Absolute Maximum ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

10 S

Steady State

-20

Unit

V

f8

Gate-Source Voltage

V_GS

-2.4

-1.9

0.9

-2.2

-1.7

0.8

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

T_A=25°C

T_A=70°C

Continuous Drain Current ^a

Maximum Power Dissipation ^a

Continuous Drain Current ^b

Maximum Power Dissipation ^b

I_D

P_D

I_D

A

W

A

0.5

-2.2

-1.7

0.7

-2.0

-1.6

0.6

P_D

W

0.5

0.4

Pulsed Drain Current ^c

I_DM

T_J

A

-10

150

Operating Junction Temperature

Lead Temperature

°C

260

T_L

-55 to 150

Storage Temperature Range

T_stg

Thermal resistance ratings

Parameter

Symbol

Typical

105

Maximum

135

Unit

t 10 s

Junction-to-Ambient Thermal Resistance ^a

R_șJA

120

155

Steady State

t 10 s

130

160

°C/W

Junction-to-Ambient Thermal Resistance ^b

Junction-to-Case Thermal Resistance

R_șJA

R_șJC

145

190

Steady State

60

75

a

b

c

d

Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper

Surface mounted on FR-4 board using minimum pad size, 1oz copper

Pulse width<380μs, Duty Cycle<2%

Maximum junction temperature T_J=150°C.

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Product specification

WPM2015

Electronics Characteristics (Ta=25^oC, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-to-source Leakage Current

ON CHARACTERISTICS

Gate Threshold Voltage

BV_DSS

I_DSS

I_GSS

V_GS= 0 V, I_D= -250uA

V_DS= -16V, V_GS= 0V

V_DS= 0 V, V_GS= f8V

-20

V

-1

uA

nA

ꢁ

f100

V_GS(TH)

R_DS(on)

V_GS= V_DS, I_D= -250uA

V_GS= -4.5V, I_D= -2.7A

V_GS= -2.5V, I_D= -2.2A

-0.40

-0.62

81

-0.81

110

V

b, c

m

Drain-to-source On-resistance

103

150

CAPACITANCES, CHARGES

Input Capacitance

C_ISS

534

62

V_GS= 0 V,

f = 1.0 MHz,

pF

nC

Output Capacitance

C_OSS

C_RSS

Q_G(TOT)

Q_G(TH)

Q_GS

V_DS= -10 V

Reverse Transfer Capacitance

Total Gate Charge

54

7.3

0.5

1.25

1.15

V_GS= -4.5 V,

_DS= -10 V,

Threshold Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

SWITCHING CHARACTERISTICS

Turn-On Delay Time

V

I_D= -2.7A

Q_GD

td(ON)

8.0

6.4

V_GS= -4.5 V,

Rise Time

tr

V_DS= -10 V,

ns

V

I_D=-1.2A,

Turn-Off Delay Time

td(OFF)

tf

41.0

7.0

R_G=6

Fall Time

BODY DIODE CHARACTERISTICS

Forward Voltage

V_SD

V_GS= 0 V, I_S= -0.9A

-0.74

-1.5

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型号:	WPM1481-6/TR
生命周期：	Contact Manufacturer
包装说明：	,
Reach Compliance Code：	unknown
风险等级：	5.71
Base Number Matches：	1

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产品型号WPM1481-6/TR的概述

产品型号WPM2015的Datasheet PDF文件预览

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