YG225D2现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

产品型号YG225D2的Datasheet PDF文件预览

YG225C2,N2,D2 (10A)

(200V / 10A)

Outline drawings, mm

FAST RECOVERY DIODE

+0.2

-0.1

4.5±0.2

2.7±0.2

10±0.5

ø3.2

1.2±0.2

0.6⁺^-0^0.2

0.7±0.2

Features

2.7±0.2

2.54±0.2

Insulated package by fully molding

JEDEC

EIAJ

High voltage by mesa design

SC-67

High reliability

Connection diagram

2

Applications

High speed switching

YG225C2

YG225N2

YG225D2

1

3

2

1

2

3

Maximum ratings and characteristics

Absolute maximum ratings

Item

Symbol

V^RRM

VRSM

Viso

Conditions

Unit

V

Rating

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Isolating voltage

200

V

250

Terminals-to-Case, AC.1min

Square wave, duty=1/2, Tc=95°C

Sine wave 10ms

V

1500

IO

Average output current

Surge current

A

10*

70

IFSM

Tj

A

Operating junction temperature

Storage temperature

°C

+150

Tstg

-40 to +150

*Average forward current of centertap full wave connection

Electrical characteristics (Ta=25°C Unless otherwise specified )

Symbol

V^FM

Conditions

I^FM=2.5A

Item

Max.

1.3

Unit

V

Forward voltage drop **

IRRM

50

VR=VRRM

Reverse current

**

µA

trr

0.4

IF=0.1A, IR=0.1A, Irec=0.01A

Reverse recovery time

Thermal resistance

µs

Rth(j-c)

3.5*

Junction to case

** ^{Rating per element}

°C/W

Mechanical characteristics

0.3 to 0.5

2.3

Mounting torque

Recommended torque

N·m

g

Approximate weight

YG225C2,N2,D2 (10A)

(200V / 10A )

Characteristics

Reverse Characteristic (typ.)

Forward Characteristic (typ.)

10³

Tj=150°C

Tj=125°C

10²

10

Tj=100°C

10¹

Tj=150°C

Tj=125°C

Tj=100°C

Tj=25°C

1

10⁰

0.1

Tj=25°C

10^-1

10^-2

0.01

0.0

0

50

100

150

200

250

0.5

1.0

1.5

2.0

VR Reverse Voltage (V)

VF Forward Voltage (V)

Current Derating (Io-Tc)

Forward Power Dissipation

160

150

140

130

120

110

100

90

14

12

10

8

Io

λ

360^o

Square waveλ=60°

Square waveλ=120°

Sine wave λ=180°

Square waveλ=180°

DC

Square wave λ=180°C

Sine wave λ=180°C

Square wave λ=120°C

6

4

80

Square wave λ=60°C

70

2

60

Per 1element

0

50

0

1

2

3

4

5

6

7

0

5

10

15

Io Average Forward Current (A)

Io Average Output Current (A)

λ:Conduction angle of forward current for each rectifier element

Io:Output current of center-tap full wave connection

Junction Capacitance Characteristic (typ.)

Surge Capability

100

10

1

10

100

1

10

VR Reverse Voltage (V)

Number of Cycles at 50Hz

YG225C2,N2,D2 (10A)

(200V / 10A )

Transient Thermal Impedance

10²

10¹

10⁰

10^-1

10^-3

10^-2

10^-1

10⁰

10¹

10²

10³

t

Time (sec)

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型号:	YG225D2
生命周期：	Obsolete
零件包装代码：	SC-67
包装说明：	R-PSFM-T3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.82
其他特性：	HIGH RELIABILITY
应用：	HIGH VOLTAGE FAST RECOVERY
外壳连接：	ISOLATED
配置：	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.3 V
JESD-30 代码：	R-PSFM-T3
最大非重复峰值正向电流：	70 A
元件数量：	2
相数：	1
端子数量：	3
最高工作温度：	150 °C
最大输出电流：	10 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
认证状态：	Not Qualified
最大重复峰值反向电压：	200 V
最大反向恢复时间：	0.4 µs
子类别：	Rectifier Diodes
表面贴装：	NO
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
Base Number Matches：	1

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