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产品型号YG865C12R的概述

芯片YG865C12R的概述 YG865C12R是一款专为嵌入式系统和先进电子设备设计的高度集成的微处理器芯片。其广泛应用于物联网(IoT)、工业自动化、智能家居、消费电子等多个领域，因其出色的性能和能效比受到广泛关注。该芯片的核心优势在于其灵活的架构和强大的计算能力，能够支持多种操作系统以及复杂的应用程序。同时，它内置了多种接口和通讯协议，使得工程师在设计和开发过程中能够更为便利地进行功能扩展和系统集成。YG865C12R采用了先进的技术，以确保在各种环境条件下的可靠性和稳定性，满足现代电子产品对性能和耐用性的需求。芯片YG865C12R的详细参数 YG865C12R的技术参数包括以下几个关键指标： - CPU架构：基于ARM Cortex-A系列架构，支持高达1.2GHz的处理频率。 - 内存：集成512MB DDR3内存，支持外扩至1GB，用于实时数据处理和多任务操作。 - ...

产品型号YG865C12R的Datasheet PDF文件预览

(120V / 20A )

[0401]

YG865C12R (20A)

High Voltage Schottky barrier diode

Outline drawings, mm

+0.2

ø3.2 ^-0.1

4.5±0.2

2.7±0.2

10±0.5

Major characteristics

Characteristics YG865C12R Units Condition

V^RRM

V^F

120

0.88

20

V

A

1

2

3

Tc=25°C MAX.

IO

1.2±0.2

0.6 ⁺^-^00.2

2.7±0.2

0.7±0.2

2.54±0.2

Features

Low VF

Applications

Package : TO-220F

Epoxy resin UL : V-0

High frequency operation

DC-DCconverters

AC adapter

High Voltage

Center tap connection

Connection diagram

Maximum ratings and characteristics

1

2

3

Absolute maximum ratings (at Tc=25°C Unless otherwise specified )

Symbol

V^RSM

VRRM

Viso

Io

Conditions

Item

Rating

120

Unit

V

Repetitive peak surge reverse voltage

Repetitive peak reverse voltage

Isolating voltage

tw=500ns, duty=1/40

120

V

Terminals-to-Case,

AC.1min

1500

20

V

Square wave, duty=1/2

Tc=116°C

*

Average output current

A

Sine wave

10ms 1shot

IFSM

Tj

Non-repetitive surge current **

Operating junction temperature

Storage temperature

150

A

+150

°C

Tstg

-40 to +150

* Out put current of center tap full wave connection

**Rating per element

Electrical characteristics (at Tc=25°C Unless otherwise specified )

Item

Symbol

Max.

0.88

Unit

V

Conditions

I^FM=10A

Forward voltage drop

Reverse current

VF

VR=VRRM

IR

150

µA

Junction to case

Rth(j-c)

Thermal resistance

1.75

°C/W

Mechanical characteristics

Mounting torque

Recommended torque

0.3 to 0.5

2

N·m

g

Approximate mass

(120V / 20A )

YG865C12R (20A)

Characteristics

Reverse Characteristic (typ.)

Forward Characteristic (typ.)

100

10

1

Tj=150°C

Tj=125°C

10¹

10⁰

Tj=100°C

Tj=150°C

Tj=125°C

Tj=100°C

Tj=25°C

10^-1

10^-2

10^-3

Tj= 25°C

0.1

0

10 20 30 40 50 60 70 80 90 100 110 120 130

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

V R Reverse Voltage (V)

V F Forward Voltage (A)

Reverse Power Dissipation (max.)

Forward Power Dissipation (max.)

10

16

14

12

10

8

Io

360°

DC

λ

8

6

4

2

0

VR

360°

α

Square wave λ =60°

Square wave λ =120°

Sine wave λ =180°

Square wave λ =180°

α=180°

DC

6

4

2

Per 1element

0

20

40

60

80

100

120

0

2

4

6

8

10

12

V R Reverse Voltage (V)

I o Average Output Current (A)

Current Derating (Io-Tc) (max.)

Junction Capacitance Characteristic (max.)

1000

160

150

140

130

120

110

100

90

DC

Sine wave λ =180°

Square wave λ =180°

Square wave λ =120°

100

Square wave λ =60°

360°

80

λ

Io

70

VR=60V

60

10

50

0

5

10

15

20

25

30

1

10

100

1000

I o Average Output Current (A)

λ:Conduction angle of forward current for each rectifier element

VR Reverse Voltage (V)

Io:Output current of center-tap full wave connection

YG865C12R (20A)

(120V / 20A )

Surge Capability (max.)

Surge Current Ratings (max.)

1000

100

10

1000

100

10

1

10

100

1

10

100

1000

Number of Cycles at 50Hz

tTime (ms) Sinewave

Transient Thermal Impedance (max.)

10¹

Rth(j-c):1.75°C/W

10⁰

10^-1

10^-2

10^-3

10^-2

10^-1

10⁰

10¹

10²

t

Time (sec)

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产品型号YG865C12R的概述

产品型号YG865C12R的Datasheet PDF文件预览

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