ZVN3310FTA原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号ZVN3310FTA的概述

ZVN3310FTA芯片概述 ZVN3310FTA是一种高性能的N通道MOSFET，广泛应用于开关电源、DC-DC变换器和其他高效能功率管理领域。其独特的性能特点使其在众多现代电子设备中发挥着不可或缺的作用。MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor）是半导体器件的一种，主要用于增强电流开关和放大功能，通常用于功率控制和信号传输。 ZVN3310FTA的详细参数 ZVN3310FTA的主要参数包括： - 最大漏极-源极电压 (Vds): 60V。这表示MOSFET在关断状态下能够承受的最大电压。 - 最大漏极电流 (Id): 30A。该参数指的是在特定条件下，漏极能够承载的最大电流。 - 门源极阈值电压 (Vgs(th)): 通常为1V到2V，意味着在此电压以上MOSFET开始导通。 - Rds(on): 0.045...

产品型号ZVN3310FTA的Datasheet PDF文件预览

A Product Line of

Diodes Incorporated

ZVN3310F

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Product Summary

Features and Benefits

•

High pulse current handling in linear mode

Low input capacitance

Fast switching speed

100

V_DS(V)

R_DS(ON)(Ω)

Lead Free By Design/RoHS Compliant (Note 1)

Description and Applications

This MOSFET utilises a structure that combines low input

capacitance with relatively low on-resistance and has an intrinsically

higher pulse current handling capability in linear mode than a

comparable trench technology structure. This MOSFET is suitable for

general purpose applications.

Mechanical Data

•

Case: SOT-23

Case Material: UL Flammability Classification Rating 94V-0

Moisture sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

•

General purpose 100V FET

Power management

Disconnect switches

Telecoms

Complementary Type – ZVP3310F

•

Terminal Connections: See Diagram

Weight: 0.008 grams (approximate)

SOT-23

Drain

Gate

Source

TOP VIEW

Pin Out Configuration

Equivalent Circuit

TOP VIEW

Ordering Information (Note 2)

Product

ZVN3310FTA

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

3000

Notes:

1. No purposefully added lead.

2. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

MF = Product Type Marking Code

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October 2009

ZVN3310F

Document Number DS31980 Rev. 4 - 2

A Product Line of

Diodes Incorporated

ZVN3310F

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Value

100

±20

100

Units

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

I_DM

Thermal Characteristics

Characteristic

Power Dissipation @T_A= 25°C

Operating and Storage Temperature Range

Symbol

P_D

Value

330

Unit

°C

-55 to +150

T_J,T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Test Condition

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

100

BV_DSS

I_DSS

⎯

I_D= 1mA, V_GS= 0V

V_DS= 100V, V_GS= 0V

_DS= 80V, V_GS= 0V

T_J= 25°C

T_J= 125°C (Note 4)

⎯

μA

Gate-Source Leakage

I_GSS

⎯

0.8

⎯

V_GS= ±20V, V_DS= 0V

V_DS= V_GS, I_D= 1mA

Gate Threshold Voltage

2.4

V_GS(th)

ON CHARACTERISTICS (Note 3)

On-State Drain Current

500

I_{D (ON)}

⎯

V_DS= 25V, V_GS= 10V

V_GS= 10V, I_D= 500mA

Static Drain-Source On-Resistance

Ω

R_{DS (ON)}

⎯

DYNAMIC CHARACTERISTICS (Note 4)

Forward Transconductance (Note 3)

Input Capacitance

g_fs

C_iss

C_oss

C_rss

t_D(on)

t_r

100

⎯

_DS= 25V, I_D= 500mA

_DS= 25V, V_GS= 0V

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

Turn-On Delay Time (Note 5)

Turn-On Rise Time (Note 5)

Turn-Off Delay Time (Note 5)

Turn-Off Fall Time (Note 5)

V_DD≈ 25V, I_D= 500mA

t_D(off)

t_f

Notes:

3. Measured under pulsed conditions. Width = 300μs. Duty cycle ≤2%

4. Sample test.

5. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.

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October 2009

ZVN3310F

Document Number DS31980 Rev. 4 - 2

A Product Line of

Diodes Incorporated

ZVN3310F

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October 2009

ZVN3310F

Document Number DS31980 Rev. 4 - 2

A Product Line of

Diodes Incorporated

ZVN3310F

Package Outline Dimensions

3 leads

Dim.

Millimeters

Min.

Inches

Dim.

Millimeters

Min. Max.

1.90 NOM

2.10

Inches

Max.

1.12

0.10

0.50

0.20

3.04

Min.

Max.

0.044

0.004

0.020

0.008

0.120

Min.

Max.

0.075 NOM

0.01

0.30

0.085

2.80

0.0004

0.012

0.003

0.110

2.64

1.40

0.60

0.62

0.083

0.104

0.055

0.0236

0.024

1.20

0.25

0.45

0.047

0.0098

0.018

0.95 NOM

0.037 NOM

Note:

Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

Suggested Pad Layout

0.95

0.037

2.0

0.079

0.9

0.035

inches

0.8

0.031

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October 2009

ZVN3310F

Document Number DS31980 Rev. 4 - 2

A Product Line of

Diodes Incorporated

ZVN3310F

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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ZVN3310F

Document Number DS31980 Rev. 4 - 2

ZVN3310FTA相关文章

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ZVN3310FTA产品参数

型号:	ZVN3310FTA
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	ZETEX PLC
包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.21.00.95
风险等级：	5.02
Is Samacsys：	N
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V
最大漏极电流 (Abs) (ID)：	0.1 A
最大漏极电流 (ID)：	0.1 A
最大漏源导通电阻：	10 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	5 pF
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.25 W
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管元件材料：	SILICON
Base Number Matches：	1

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