ZXMP6A17E6TA全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号ZXMP6A17E6TA的概述

ZXMP6A17E6TA芯片概述 ZXMP6A17E6TA是一款由Zetex（现为Diodes Incorporated的一部分）生产的功率场效应晶体管（MOSFET）器件。该器件通常用于低电压应用，因其高效的开关性能和良好的散热能力而深受设计师青睐。ZXMP6A17E6TA广泛应用于电源管理、马达驱动和LED驱动器等领域。详细参数 ZXMP6A17E6TA的主要参数可以分为电气特性和机械特性两个方面： 1. 电气特性： - V_DS（漏极-源极电压）：最大60V - I_D（漏极电流）：最大7A - R_DS(on)（在开启时的漏源电阻）：典型值为0.045Ω，在V_GS = 10V下测得 - V_GS(th)（门源阈值电压）：典型值为2.0V，最大值为3.0V - t_on（开启时间）：最大值为20ns - t_off（关闭时间）：最大值为50...

产品型号ZXMP6A17E6TA的Datasheet PDF文件预览

ZXMP6A17E6

ADVANCE INFORMATION

60V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

V_(BR)DSS= -60V; R_DS(ON)= 0.125

I_D= -3.0A

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that

com bines the benefits of low on-resistance with fast switching speed. This m akes

them ideal for high efficiency, low voltage, power m anagem ent applications.

SOT23-6

FEATURES

•

Low on-resistance

Fast switching speed

Low threshold

Low gate drive

SOT23-6 package

APPLICATIONS

•

DC - DC Converters

Power m anagem ent functions

Disconnect switches

Motor control

PINOUT

ORDERING INFORMATION

DEVICE

REEL

SIZE

TAPE

WIDTH

QUANTITY

PER REEL

ZXMP6A17E6TA

ZXMP6A17E6TC

7”

8m m

3000 units

13”

10000 units

DEVICE MARKING

Top View

•

617

PROVISIONAL ISSUE B - MARCH 2005

ZXMP6A17E6

ADVANCE INFORMATION

ABSOLUTE MAXIMUM RATINGS

PARAMETER

S YMBOL

LIMIT

-60

UNIT

Dra in -S o u rce Vo lta g e

Ga te S o u rce Vo lta g e

DS S

(b )

Co n tin u o u s Dra in Cu rre n t V =10V; T =25°C

-3.0

-2.4

-2.3

(b )

=10V; T =70°C

(a )

=10V; T =25°C

(c)

Pu ls e d Dra in Cu rre n t

-13.6

-2.5

(b )

Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e )

(c)

Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e )

-13.6

S M

(a )

Po w e r Dis s ip a tio n a t T =25°C

Lin e a r De ra tin g Fa cto r

1.1

8.8

m W/°C

(b )

Po w e r Dis s ip a tio n a t T =25°C

1.7

Lin e a r De ra tin g Fa cto r

13.6

m W/°C

Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e

T :T

-55 to +150

°C

s tg

THERMAL RESISTANCE

PARAMETER

S YMBOL

VALUE

113

UNIT

°C/W

(a )

J u n ctio n to Am b ie n t

θJ A

(b )

J u n ctio n to Am b ie n t

NOTES

(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface m ounted on FR4 PCB m easured at tр5 secs.

(c) Repetitive rating 25m m x 25m m FR4 PCB, D = 0.02, pulse width 300␮s - pulse width lim ited by m axim um junction tem perature. Refer to

Transient Therm al Im pedance graph.

PROVISIONAL ISSUE B - MARCH 2005

ZXMP6A17E6

ADVANCE INFORMATION

CHARACTERISTICS

1.2

1.0

0.8

0.6

0.4

0.2

0.0

R_DS(ON)

Limited

100m

100ms

10ms

1ms

100us

10m

Single Pulse, T_amb=25°C

100

100 125 150

-V Drain-Source Voltage (V)

Temperature (°C)

P-channel Safe Operating Area

Derating Curve

Single Pulse

_amb=25°C

100

D=0.5

Single Pulse

D=0.2

D=0.05

D=0.1

100µ 1m 10m 100m

10 100

100µ 1m 10m 100m

10 100

Pulse Width (s)

Transient Thermal Impedance

Pulse Power Dissipation

PROVISIONAL ISSUE B - MARCH 2005

ZXMP6A17E6

ADVANCE INFORMATION

ELECTRICAL CHARACTERISTICS (at T_A= 25°C unless otherwise stated)

PARAMETER

S YMBOL

MIN.

TYP. MAX. UNI CONDITIONS

S TATIC

Dra in -S o u rce Bre a kd o w n Vo lta g e

Ze ro Ga te Vo lta g e Dra in Cu rre n t

Ga te -Bo d y Le a ka g e

-60

␮A

I =-250␮A, V =0V

D GS

(BR)DS S

-1.0

100

=-60V, V =0V

DS S

=Ϯ20V, V =0V

GS S

Ga te -S o u rce Th re s h o ld Vo lta g e

Static Drain-Source On-State Resistance

-1.0

I =-250␮A, V = V

DS GS

GS (th )

(1)

0.125

0.190

=-10V, I =-2.3A

⍀

DS (o n )

=-4.5V, I =-1.9A

(1)(3)

Fo rw a rd Tra n s co n d u cta n ce

4.9

=-15V,I =-2.3A

(3)

DYNAMIC

In p u t Ca p a cita n ce

670

46.7

is s

=-30V, V =0V,

Ou tp u t Ca p a cita n ce

f=1MHz

o s s

rs s

Re ve rs e Tra n s fe r Ca p a cita n ce

(2) (3)

S WITCHING

Tu rn -On De la y Tim e

Ris e Tim e

2.4

3.5

d (o n )

=-30V, I =-1A

6.0⍀, V =-10V

Tu rn -Off De la y Tim e

Fa ll Tim e

30.0

7.4

d (o ff)

Ga te Ch a rg e

7.3

=-30V,V =-5V,

DS GS

I_D=-2.3A

To ta l Ga te Ch a rg e

15.1

1.8

=-30V,V =-10V,

Ga te -S o u rce Ch a rg e

Ga te -Dra in Ch a rg e

S OURCE-DRAIN DIODE

g s

g d

I_D=-2.3A

1.9

(1)

Dio d e Fo rw a rd Vo lta g e

-0.85 -0.95

T =25°C, I =-2A,

J S

S D

=0V

(3)

Re ve rs e Re co ve ry Tim e

26.4

32.7

T =25°C, I =-1.7A,

J F

d i/d t= 100A/µs

(3)

Re ve rs e Re co ve ry Ch a rg e

NOTES:

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction tem perature.

(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE B - MARCH 2005

ZXMP6A17E6

ADVANCE INFORMATION

TYPICAL CHARACTERISTICS

10V

T = 150°C

4.5V

T = 25°C

4.5V

3.5V

2.5V

-V

0.1

0.01

1.5V

0.01

0.1

-V Drain-S¹ource Voltag¹e⁰(V)

0.1

Output Characteristics

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

= -10V

I_D^G=^S- 0.9A

T = 150°C

R_DS(on)

T = 25°C

GS(th)

= V

0.1

I_D^G=^S-250uA

-V_DS= 10V

-50

100

150

-V Gate-Source Voltage (V)

Tj Junction Temperature (°C)

Typical Transfer Characteristics

Normalised Curves v Temperature

T = 25°C

-V

2.5V

T = 150°C

3.5V

T = 25°C

0.1

4.5V

10V

0.01

0.1

0.0

0.2

0.4

0.6

0.8

1.2

1.4

-V Source-Drain Vol¹ta^.0ge (V)

0.1

-I_DDrain Current (A)

Source-Drain Diode Forward Voltage

On-Resistance v Drain Current

PROVISIONAL ISSUE B - MARCH 2005

ZXMP6A17E6

ADVANCE INFORMATION

TYPICAL CHARACTERISTICS

1000

900

800

700

600

_GS= 0V

I_D= -2.2A

f = 1MHz

ISS

500

400

300

200

100

C_OSS

RSS

V_DS= -30V

0.1

10 12 14 16

-V - Drain - Source Voltage (V)

Q - Charge (nC)

Capacitance v Drain-Source Voltage

Gate-Source Voltage v Gate Charge

PROVISIONAL ISSUE B - MARCH 2005

ZXMP6A17E6

ADVANCE INFORMATION

PACKAGE OUTLINE

PAD LAYOUT DETAILS

CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES.

PACKAGE DIMENSIONS

Millim eters

Inches

Min

Millim eters

Inches

Min

DIM

Min

0.90

0.00

0.90

0.35

0.09

2.80

Max

0.057

0.006

0.051

0.019

0.008

0.118

Min

2.60

1.50

0.10

Max

0.118

0.069

0.002

1.45

0.15

1.30

0.50

0.20

3.00

0.35

3.00

1.75

0.60

0.102

0.059

0.004

0.035

0.014

0.0035

0.110

0.95 REF

1.90 REF

0° 10°

0.037 REF

0.074 REF

0° 10°

Europe

Am ericas

Asia Pacific

Corporate Headquarters

Zetex Gm bH

Zetex Inc

Zetex (Asia) Ltd

Zetex Sem iconductors plc

Zetex Technology Park, Chadderton

Oldham , OL9 9LL

Streitfeldstraß e 19

D-81673 München

Germ any

700 Veterans Mem orial Hwy

Hauppauge, NY 11788

USA

3701-04 Metroplaza Tower 1

Hing Fong Road, Kwai Fong

Hong Kong

United Kingdom

Telefon: (49) 89 45 49 49 0

Fax: (49) 89 45 49 49 49

europe.sales@zetex.com

Telephone: (1) 631 360 2222

Fax: (1) 631 360 8222

usa.sales@zetex.com

Telephone: (852) 26100 611

Fax: (852) 24250 494

asia.sales@zetex.com

Telephone (44) 161 622 4444

Fax: (44) 161 622 4446

hq@zetex.com

These offices are supported by agents and distributors in m ajor countries world-wide.

This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced

for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany

reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

For the latest product inform ation, log on to www.zetex.com

PROVISIONAL ISSUE B - MARCH 2005

ZXMP6A17E6TA相关文章

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ZXMP6A17E6TA产品参数

型号:	ZXMP6A17E6TA
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	ZETEX PLC
包装说明：	SOT-23, 6 PIN
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.14
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	3 A
最大漏源导通电阻：	0.125 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	6
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL
最大脉冲漏极电流 (IDM)：	13.6 A
认证状态：	Not Qualified
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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