ZXTN19060CFFTA全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

ZXTN19060CFF

60V, SOT23F, NPN high gain power transistor

Summary

BV

> 160V

> 60V

> 6V

CEX

CEO

ECO

I

= 5.5A

C(cont)

V

< 45mV @ 1A

CE(sat)

R

= 26m⍀

P = 1.5W

D

Complementary part number ZXTP19060CFF

Description

C

E

This mid voltage NPN transistor has been designed for applications

requiring high gain and low saturation voltage. The SOT23F package is

pin compatible with the industry standard SOT23 footprint but offers

lower profile and higher dissipation for applications where power

density is of utmost importance.

B

Features

•

High gain

Low saturation voltage

Low profile small outline package

E

B

C

Applications

•

Motor drive

Siren driver

Pinout - top view

Ordering information

Device

Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXTN19060CFFTA

7

8

3000

Device marking

1E4

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ZXTN19060CFF

Absolute maximum ratings

Parameter

Symbol

Limit

Unit

Collector-base voltage

V

160

V

CBO

Collector-emitter voltage (forward blocking)

Collector-emitter voltage

V

160

60

6

V

CEX

CEO

ECO

EBO

Emitter-collector voltage (reverse blocking)

Emitter-base voltage

V

7

V

Continuous collector current (c)

Base current

I

5.5

1

A

W

C

B

Peak pulse current

I

12

0.84

CM

Power dissipation @ T

=25°C (a)

=25°C (b)

=25°C (c)

=25°C (d)

P

amb

D

Linear derating factor

Power dissipation @ T

6.72

1.34

mW/°C

W

Linear derating factor

Power dissipation @ T

10.72

1.50

mW/°C

W

Linear derating factor

Power dissipation @ T

12.0

2.0

mW/°C

W

Linear derating factor

16.0

mW/°C

°C

Operating and storage temperature range

T , T

- 55 to 150

j

stg

Thermal resistance

Parameter

Symbol

Limit

Unit

(a)

R

149.3

°C/W

Junction to ambient

⍜JA

(b)

R

93.4

83.3

60

°C/W

Junction to ambient

⍜JA

(c)

R

Junction to ambient

⍜JA

(d)

R

Junction to ambient

⍜JA

NOTES:

(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions.

(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.

(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.

(d)As (c) above measured at t<5secs.

Issue 1 - October 2006

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ZXTN19060CFF

Characteristics

Issue 1 - October 2006

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ZXTN19060CFF

Electrical characteristics (at T

= 25°C unless otherwise stated)

amb

Symbol Min. Typ. Max. Unit Conditions

Parameter

Collector-base breakdown voltage BV

160 200

V

IC = 100␮A

I = 100␮A, R Յ 1k⍀ or

CBO

CEX

Collector-emitter breakdown

voltage (forward blocking)

BV

C

BE

-1V < V < 0.25V

BE

(*)

I = 10mA

C

Collector-emitter breakdown

voltage (base open)

BV

60

75

V

CEO

Emitter-base breakdown voltage BV

7

6

8.3

7

V

I = 100␮A

E

EBO

ECX

Emitter-collector breakdown

voltage (reverse blocking)

BV

I = 100mA, R Յ1k⍀ or

E

BC

> -0.25V

0.25V > V

BC

Emitter-collector breakdown

voltage (base open)

BV

6

7

V

I = 100␮A,

E

ECO

Collector-base cut-off current

I

<1

50

20

nA

␮A

nA

V

= 120V

CBO

CB

CE

= 120V, T

= 100°C

amb

Collector-emitter cut-off current

Emitter-base cut-off current

I

<1

100

= 120V, R Յ1k⍀ or

BE

CEX

EBO

-1V < V < 0.25V

BE

<1

36

50

45

nA

V

= 5.6V

EB

(*)

Collector-emitter saturation

voltage

V

mV

I = 1A, I = 100mA

CE(sat)

C

B

(*)

105 150 mV

105 135 mV

145 175 mV

1000 1100 mV

880 1000 mV

I = 1A, I = 10mA

C

B

(*)

I = 2A, I = 40mA

C

B

(*)

I = 5.5A, I = 550mA

C

B

Base-emitter saturation voltage

Base-emitter turn-on voltage

V

h

I = 5.5A, I = 550mA

BE(sat)

BE(on)

C

B

(*)

I = 5.5A, V = 2V

C

CE

(*)

Static forward current transfer

ratio

200 350 500

160 280

I = 0.1A, V = 2V

FE

C

CE

(*)

I = 2A, V = 2V

C

CE

(*)

30

50

I = 6A, V = 2V

C

CE

Transition frequency

f

130

MHz I = 50mA, V = 10V

T

C

CE

f = 50MHz

(*)

Input capacitance

C

310

pF

V

= 0.5V, f = 1MHz

ibo

EB

(*)

Output capacitance

19.3

25

V

= 10V, f = 1MHz

obo

CB

CC

Delay time

Rise time

Storage time

Fall time

t

27.3

13.2

682

ns

= 10V.

d

I = 500mA,

C

r

s

f

I

= I = 50mA.

B2

B1

90.9

NOTES:

(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.

Issue 1 - October 2006

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ZXTN19060CFF

Typical characteristics

Issue 1 - October 2006

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ZXTN19060CFF

Package outline - SOT23F

c

D

e1

e

b

L1

L

E

E1

E2

b

A1

R

A

Dim.

Millimeters

Inches

Dim.

Millimeters

Inches

Max.

Min.

0.80

0.00

0.35

0.10

2.80

Max.

Min.

Max.

Min.

2.30

1.50

1.10

0.48

0.30

0.05

0°

Max.

2.50

1.70

1.26

0.68

0.50

0.15

12°

Max.

0.0984

0.0669

0.0496

0.0268

0.0161

0.0059

12°

A

A1

b

1.00

0.10

0.45

0.20

3.00

0.0315

0.00

0.0394

0.0043

0.0161

0.0079

0.1181

E

E1

E2

L

0.0906

0.0590

0.0433

0.0189

0.0153

0.0019

0°

0.0153

0.0043

0.1102

c

D

L1

R

e

0.95 ref

0.0374 ref

e1

1.80

2.00

0.0709

0.0787

O

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

Europe

Americas

Asia Pacific

Corporate Headquarters

Zetex GmbH

Kustermann-park

Balanstraße 59

D-81541 München

Germany

Zetex Inc

Zetex (Asia Ltd)

Zetex Semiconductors plc

Zetex Technology Park, Chadderton

Oldham, OL9 9LL

700 Veterans Memorial Highway

Hauppauge, NY 11788

USA

3701-04 Metroplaza Tower 1

Hing Fong Road, Kwai Fong

Hong Kong

United Kingdom

Telefon: (49) 89 45 49 49 0

Fax: (49) 89 45 49 49 49

europe.sales@zetex.com

Telephone: (1) 631 360 2222

Fax: (1) 631 360 8222

usa.sales@zetex.com

Telephone: (852) 26100 611

Fax: (852) 24250 494

asia.sales@zetex.com

Telephone: (44) 161 622 4444

Fax: (44) 161 622 4446

hq@zetex.com

For international sales offices visit www.zetex.com/offices

Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork

This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or

reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.

The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

Issue 1 - October 2006

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型号:	ZXTN19060CFFTA
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	ZETEX PLC
包装说明：	SOT-23F, 3 PIN
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.51
Is Samacsys：	N
最大集电极电流 (IC)：	5.5 A
集电极-发射极最大电压：	60 V
配置：	SINGLE
最小直流电流增益 (hFE)：	30
JESD-30 代码：	R-PDSO-F3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN
认证状态：	Not Qualified
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	FLAT
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	130 MHz
最大关闭时间（toff）：	159.1 ns
最大开启时间（吨）：	40.5 ns
Base Number Matches：	1

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