ZXTN19060CFF
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Symbol Min. Typ. Max. Unit Conditions
Parameter
Collector-base breakdown voltage BV
160 200
160 200
V
V
IC = 100A
I = 100A, R Յ 1k⍀ or
CBO
CEX
Collector-emitter breakdown
voltage (forward blocking)
BV
C
BE
-1V < V < 0.25V
BE
(*)
I = 10mA
C
Collector-emitter breakdown
voltage (base open)
BV
60
75
V
CEO
Emitter-base breakdown voltage BV
7
6
8.3
7
V
V
I = 100A
E
EBO
ECX
Emitter-collector breakdown
voltage (reverse blocking)
BV
I = 100mA, R Յ1k⍀ or
E
BC
> -0.25V
0.25V > V
BC
Emitter-collector breakdown
voltage (base open)
BV
6
7
V
I = 100A,
E
ECO
Collector-base cut-off current
I
<1
50
20
nA
A
nA
V
V
V
= 120V
CBO
CB
CB
CE
= 120V, T
= 100°C
amb
Collector-emitter cut-off current
Emitter-base cut-off current
I
I
<1
100
= 120V, R Յ1k⍀ or
BE
CEX
EBO
-1V < V < 0.25V
BE
<1
36
50
45
nA
V
= 5.6V
EB
(*)
Collector-emitter saturation
voltage
V
mV
I = 1A, I = 100mA
CE(sat)
C
B
(*)
105 150 mV
105 135 mV
145 175 mV
1000 1100 mV
880 1000 mV
I = 1A, I = 10mA
C
B
(*)
I = 2A, I = 40mA
C
B
(*)
(*)
I = 5.5A, I = 550mA
C
B
Base-emitter saturation voltage
Base-emitter turn-on voltage
V
V
h
I = 5.5A, I = 550mA
BE(sat)
BE(on)
C
B
(*)
I = 5.5A, V = 2V
C
CE
(*)
Static forward current transfer
ratio
200 350 500
160 280
I = 0.1A, V = 2V
FE
C
CE
(*)
I = 2A, V = 2V
C
CE
(*)
30
50
I = 6A, V = 2V
C
CE
Transition frequency
f
130
MHz I = 50mA, V = 10V
T
C
CE
f = 50MHz
(*)
Input capacitance
C
C
310
pF
pF
V
= 0.5V, f = 1MHz
ibo
EB
(*)
Output capacitance
19.3
25
V
V
= 10V, f = 1MHz
obo
CB
CC
Delay time
Rise time
Storage time
Fall time
t
t
t
t
27.3
13.2
682
ns
ns
ns
ns
= 10V.
d
I = 500mA,
C
r
s
f
I
= I = 50mA.
B2
B1
90.9
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
Issue 1 - October 2006
© Zetex Semiconductors plc 2006
4
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