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产品型号ZXTN25040DFLTA的概述

ZXTN25040DFLTA芯片概述 ZXTN25040DFLTA是一款高效的N沟道功率MOSFET,广泛应用于开关电源、DC-DC转换器及其他功率管理的电路中。MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)是现代电子设备中不可或缺的组件之一,因其具有低导通电阻、高速开关能力和良好的热稳定性,特别适合于高频和高效率的电力转换应用。 该芯片的命名中,“ZXTN”表示其为N沟道MOSFET,而且具有高压承受能力。“25040”则表明其最大漏极到源极电压为250伏,整流能力在40安培范围。DFLTA则是其封装和相关特性的一部分标识。ZXTN25040DFLTA因其卓越的性能,被广泛用于各种消费电子、工业电源及汽车电子中。 详细参数 ZXTN25040DFLTA的主要参数如下: - 类型:N沟道MOSFET - 最大V_DS(...

产品型号ZXTN25040DFLTA的Datasheet PDF文件预览

ZXTN25040DFL  
40V, SOT23, NPN low power transistor  
Summary  
BV  
BV  
BV  
> 130V  
> 40V  
> 6V  
CEX  
CEO  
ECO  
I
= 1.5A  
C(cont)  
V
< 85mV @ 1A  
CE(sat)  
CE(sat)  
R
= 59m  
P = 350mW  
D
Complementary part number ZXTP25040DFL  
Description  
C
E
Advanced process capability has been used to achieve high current gain  
hold up making this device ideal for applications requiring high pulse  
currents.  
B
Features  
High peak current  
Low saturation voltage  
130V forward blocking voltage  
6V reverse blocking voltage  
Applications  
E
B
MOSFET and IGBT gate driving  
DC-DC conversion  
C
LED driving  
Interface between low voltage IC's and loads  
Pinout - top view  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity per reel  
ZXTN25040DFLTA  
7
8
3000  
Device marking  
1B7  
Issue 2 - January 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  
ZXTN25040DFL  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
130  
V
CBO  
Collector-emitter voltage (forward blocking)  
Collector-emitter voltage  
V
V
V
V
130  
40  
6
V
V
CEX  
CEO  
ECO  
EBO  
Emitter-collector voltage (reverse blocking)  
Emitter-base voltage  
V
7
V
(a)  
I
1.5  
0.5  
6
A
Continuous collector current  
C
Base current  
I
A
B
Peak pulse current  
I
A
CM  
(a)  
P
350  
mW  
Power dissipation at T  
Linear derating factor  
= 25°C  
D
amb  
2.8  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
-55 to 150  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
357  
°C/W  
Junction to ambient  
JA  
NOTES:  
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
Issue 2 - January 2007  
© Zetex Semiconductors plc 2007  
2
www.zetex.com  
ZXTN25040DFL  
Characteristics  
Issue 2 - January 2007  
© Zetex Semiconductors plc 2007  
3
www.zetex.com  
ZXTN25040DFL  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Symbol Min. Typ. Max. Unit Conditions  
Parameter  
Collector-base breakdown  
voltage  
Collector-emitter  
breakdown voltage (forward  
blocking)  
BV  
130  
170  
V
I = 100A  
C
CBO  
CEX  
BV  
130  
170  
V
I = 100A; R < 1kor  
C BE  
-1V < V < 0.25V  
BE  
(*)  
I = 10mA  
C
Collector-emitter breakdown BV  
voltage (base open)  
40  
7
63  
8.3  
7.4  
V
V
V
CEO  
EBO  
ECX  
Emitter-base breakdown  
voltage  
BV  
I = 100A  
E
Emitter-collector breakdown BV  
voltage (reverse blocking)  
6
I = 100A, R < 1kor  
E
BC  
> -0.25V  
0.25V > V  
BC  
Emitter-collector breakdown BV  
voltage (base open)  
6
7.4  
<1  
V
I = 100A,  
E
ECO  
Collector cut-off current  
I
I
I
50  
20  
nA  
A  
V
V
= 100V  
= 100V, T  
CBO  
CB  
CB  
= 100°C  
amb  
Collector emitter cut-off  
current  
<1  
100  
nA  
V
= 100V; R < 1kor  
CE BE  
CEX  
EBO  
-1V < V < 0.25V  
BE  
Emitter cut-off current  
<1  
35  
60  
50  
50  
80  
nA  
mV  
mV  
V
= 5.6V  
EB  
(*)  
(*)  
Collector-emitter saturation  
voltage  
V
I = 0.5A, I = 50mA  
CE(sat)  
C
B
I = 0.5A, I = 10mA  
C
B
I = 1A, I = 100mA  
70  
85  
mV  
mV  
C
B
(*)  
145  
185  
I = 1.5A, I = 30mA  
C
B
(*)  
235  
840  
285  
950  
mV  
mV  
I = 4A, I = 400mA  
C
B
(*)  
Base-emitter saturation  
voltage  
Base-emitter turn-on  
voltage  
Static forward current  
transfer ratio  
V
V
h
I = 1.5A, I = 30mA  
BE(sat)  
BE(on)  
C
B
(*)  
770  
850  
900  
mV  
I = 1.5A, V = 2V  
C
CE  
(*)  
300  
300  
170  
25  
450  
400  
250  
40  
I = 10mA, V = 2V  
FE  
C
CE  
(*)  
I = 1A, V = 2V  
C
CE  
(*)  
I = 1.5A, V = 2V  
C
CE  
(*)  
I = 4A, V = 2V  
C
CE  
Transition frequency  
Output capacitance  
f
190  
MHz I = 50mA, V = 10V  
T
C
CE  
f = 100MHz  
(*)  
C
11.7  
20  
pF  
V
V
= 10V, f = 1MHz  
obo  
CB  
CC  
Delay time  
Rise time  
t
t
t
t
64  
ns  
ns  
ns  
ns  
= 10V,  
(d)  
I = 1A,  
108  
428  
130  
C
(r)  
(s)  
(f)  
I
= I = 10mA.  
B2  
B1  
Storage time  
Fall time  
NOTES:  
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.  
Issue 2 - January 2007  
© Zetex Semiconductors plc 2007  
4
www.zetex.com  
ZXTN25040DFL  
Typical characteristics  
Issue 2 - January 2007  
© Zetex Semiconductors plc 2007  
5
www.zetex.com  
ZXTN25040DFL  
Package outline - SOT23  
E
e
e1  
b
3 leads  
D
L1  
E1  
A
L
c
A1  
Dim.  
Millimeters  
Inches  
Dim.  
Millimeters  
Inches  
Max.  
Min.  
2.67  
1.20  
-
Max.  
3.05  
1.40  
1.10  
0.53  
0.15  
Min.  
0.105  
0.047  
-
Max.  
0.120  
0.055  
0.043  
0.021  
0.0059  
Min.  
0.33  
0.01  
2.10  
0.45  
Max.  
0.51  
0.10  
2.50  
0.64  
Max.  
0.020  
0.004  
0.0985  
0.025  
A
B
C
D
F
H
K
L
0.013  
0.0004  
0.083  
0.018  
0.37  
0.085  
0.015  
0.0034  
M
N
-
0.95 NOM  
0.0375 NOM  
G
1.90 NOM  
0.075 NOM  
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Issue 2 - January 2007  
© Zetex Semiconductors plc 2007  
6
www.zetex.com  
ZXTN25040DFL  
Intentionally left blank  
Issue 2 - January 2007  
© Zetex Semiconductors plc 2007  
7
www.zetex.com  
ZXTN25040DFL  
Definitions  
Product change  
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or  
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.  
Applications disclaimer  
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for  
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is  
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights  
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,  
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,  
opportunity or consequential loss in the use of these circuit applications, under any circumstances.  
Life support  
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body  
or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or to affect its safety or effectiveness.  
Reproduction  
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the  
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a  
representation relating to the products or services concerned.  
Terms and Conditions  
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two  
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  
Quality of product  
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.  
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our  
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork  
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  
ESD (Electrostatic discharge)  
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.  
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent  
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.  
Devices suspected of being affected should be replaced.  
Green compliance  
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-  
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce  
the use of hazardous substances and/or emissions.  
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with  
WEEE and ELV directives.  
Product status key:  
“Preview”  
“Active”  
Future device intended for production at some point. Samples may be available  
Product status recommended for new designs  
“Last time buy (LTB)”  
Device will be discontinued and last time buy period and delivery is in effect  
“Not recommended for new designs” Device is still in production to support existing designs and production  
“Obsolete”  
Production has been discontinued  
Datasheet status key:  
“Draft version”  
This term denotes a very early datasheet version and contains highly provisional information, which  
may change in any manner without notice.  
“Provisional version”  
“Issue”  
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  
However, changes to the test conditions and specifications may occur, at any time and without notice.  
This term denotes an issued datasheet containing finalized specifications. However, changes to  
specifications may occur, at any time and without notice.  
Zetex sales offices  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
© 2007 Published by Zetex Semiconductors plc  
Issue 2 - January 2007  
© Zetex Semiconductors plc 2007  
8
www.zetex.com  
配单直通车
ZXTN25040DFLTA产品参数
型号:ZXTN25040DFLTA
是否Rohs认证: 符合
生命周期:Transferred
IHS 制造商:ZETEX PLC
包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliant
ECCN代码:EAR99
风险等级:5.38
最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:40 V
配置:SINGLE
最小直流电流增益 (hFE):25
JESD-30 代码:R-PDSO-G3
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:3
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:NPN
认证状态:Not Qualified
表面贴装:YES
端子面层:Matte Tin (Sn)
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING
晶体管元件材料:SILICON
标称过渡频率 (fT):190 MHz
Base Number Matches:1
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