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产品型号ZXTP25012EFHTA的概述

一、ZXTP25012EFHTA的概述 ZXTP25012EFHTA是一种具有高效能和可靠性的N沟道功率MOSFET(场效应晶体管),适用于各种电子电路和设备中。该芯片属于绝缘栅双极晶体管(IGBT)系列,广泛应用于电源管理、开关模式电源(SMPS)、电机驱动器及其它高功率应用场景。 ZXTP25012EFHTA的设计旨在满足现代电气工程领域对高效率、低损耗和高工作频率的需求。这种器件的主要特点是,其具有良好的热性能和开关性能,能够在较高温度下工作,具有更长的使用寿命。 二、ZXTP25012EFHTA的详细参数 ZXTP25012EFHTA的主要电气特性包括: - 最大漏极到源极电压(V_DS): 250V - 最大漏极电流(I_D): 12A(在适当散热条件下) - 栅极到源极阈值电压(V_GS(th)): 2V到4V - 导通电阻(R_DS(on)): < 0.2Ω(在V_GS=...

产品型号ZXTP25012EFHTA的Datasheet PDF文件预览

ZXTP25012EFH  
12V, SOT23, PNP medium power transistor  
Summary  
BV  
> -12V  
CEO  
h
> 500  
FE  
I
= -4A  
C(cont)  
R
= 40m  
CE(sat)  
V
< -65mV @ 1A  
CE(sat)  
P = 1.25W  
D
Complementary part number ZXTN25012EFH  
Description  
C
E
Advanced process capability and package design have been used to  
maximise the power handling and performance of this small outline  
transistor. The compact size and ratings of this device make it ideally  
suited to applications where space is at a premium.  
B
Features  
High power dissipation SOT23 package  
High peak current  
Very high gain, 500 minimum  
Low saturation voltage  
E
B
C
Applications  
MOSFET and IGBT gate driving  
DC - DC converters  
Motor drive  
Pinout - top view  
High side driver  
Line disconnect switch  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXTP25012EFHTA  
7
8
3000  
Device marking  
1E8  
Issue 1 - January 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  
ZXTP25012EFH  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
V
V
V
-12  
V
CBO  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
-12  
-7  
V
V
(b)  
I
-4  
A
A
A
W
Continuous collector current  
C
Base current  
I
-1  
B
Peak pulse current  
I
-10  
0.73  
CM  
(a)  
(b)  
(c)  
(d)  
P
P
P
P
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
=25°C  
=25°C  
=25°C  
=25°C  
D
D
D
D
amb  
amb  
amb  
amb  
5.84  
1.05  
mW/°C  
W
8.4  
mW/°C  
W
1.25  
9.6  
mW/°C  
W
1.81  
14.5  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
-55 to 150  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
171  
°C/W  
Junction to ambient  
JA  
(b)  
R
119  
100  
69  
°C/W  
°C/W  
°C/W  
Junction to ambient  
JA  
(c)  
R
Junction to ambient  
JA  
(d)  
R
Junction to ambient  
JA  
NOTES:  
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.  
(d)As (c) above measured at t<5secs  
Issue 1 - January 2007  
© Zetex Semiconductors plc 2007  
2
www.zetex.com  
ZXTP25012EFH  
Characteristics  
Issue 1 - January 2007  
© Zetex Semiconductors plc 2007  
3
www.zetex.com  
ZXTP25012EFH  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol  
BV  
Min. Typ. Max. Unit Conditions  
Collector-base breakdown  
voltage  
-12  
-12  
-7  
-35  
-25  
-8.5  
<-1  
V
V
V
I = -100A  
C
CBO  
(*)  
Collector-emitter breakdown BV  
voltage (base open)  
I = -10mA  
CEO  
EBO  
C
Emitter-base breakdown  
voltage  
BV  
I = -100A  
E
Collector-base cut-off  
current  
I
-50  
-20  
-50  
-65  
nA  
A  
nA  
mV  
V
V
V
= -9.6V  
CBO  
CB  
CB  
EB  
= -9.6V, T  
= 100°C  
amb  
Emitter-base cut-off current  
I
<-1  
-50  
= -5.6V  
EBO  
(*)  
Collector-emitter saturation  
voltage  
V
I = -1A, I = -100mA  
CE(sat)  
C
B
(*)  
(*)  
-150  
-175  
-160  
-260  
-350  
-210  
mV  
mV  
mV  
I = -1A, I = -10mA  
C
B
I = -2A, I = -40mA  
C
B
(*)  
(*)  
I = -4A, I = -400mA  
C
B
Base-emitter saturation  
voltage  
V
-970 -1050 mV  
I = -4A, I = -400mA  
BE(sat)  
C
B
(*)  
Base-emitter turn-on voltage V  
-825  
800  
450  
100  
310  
-950  
mV  
I = -4A, V = -2V  
BE(on)  
C
CE  
(*)  
Static forward current  
transfer ratio  
h
500  
300  
50  
1500  
I = -10mA, V = -2V  
FE  
C
CE  
(*)  
I = -1A, V = -2V  
C
CE  
(*)  
I = -4A, V = -2V  
C
CE  
Transition frequency  
Output capacitance  
f
MHz I = -50mA, V = -10V  
T
C
CE  
f = 100MHz  
(*)  
C
16.9  
pF  
V
V
= -10V, f = 1MHz  
obo  
CB  
CC  
Delay time  
Rise time  
t
t
t
t
41  
62  
ns  
ns  
ns  
ns  
= -10V  
d
I = -1A,  
C
r
s
f
I
= I = -10mA  
B2  
B1  
Storage time  
Fall time  
179  
65  
NOTES:  
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.  
Issue 1 - January 2007  
© Zetex Semiconductors plc 2007  
4
www.zetex.com  
ZXTP25012EFH  
Typical characteristics  
Issue 1 - January 2007  
© Zetex Semiconductors plc 2007  
5
www.zetex.com  
ZXTP25012EFH  
Package outline - SOT23  
E
e
e1  
b
3 leads  
D
L1  
E1  
A
L
c
A1  
Dim.  
Millimeters  
Min. Max.  
Inches  
Dim.  
Millimeters  
Inches  
Max. Max.  
0.075 NOM  
Min.  
-
Max.  
0.044  
0.004  
0.020  
0.008  
0.120  
Min.  
Max.  
A
A1  
b
-
1.12  
0.10  
0.50  
0.120  
3.04  
e1  
E
1.90 NOM  
0.01  
0.30  
0.085  
2.80  
0.0004  
0.012  
0.003  
0.110  
2.10  
1.20  
0.25  
0.45  
-
2.64  
1.40  
0.62  
0.62  
-
0.083  
0.104  
0.055  
0.024  
0.024  
-
E1  
L
0.047  
0.018  
0.018  
-
C
D
L1  
-
e
0.95 NOM  
0.0375 NOM  
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Issue 1 - January 2007  
© Zetex Semiconductors plc 2007  
6
www.zetex.com  
ZXTP25012EFH  
Intentionally left blank  
Issue 1 - January 2007  
© Zetex Semiconductors plc 2007  
7
www.zetex.com  
ZXTP25012EFH  
Definitions  
Product change  
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or  
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.  
Applications disclaimer  
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for  
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is  
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights  
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,  
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,  
opportunity or consequential loss in the use of these circuit applications, under any circumstances.  
Life support  
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body  
or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or to affect its safety or effectiveness.  
Reproduction  
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the  
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a  
representation relating to the products or services concerned.  
Terms and Conditions  
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two  
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  
Quality of product  
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.  
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our  
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork  
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  
ESD (Electrostatic discharge)  
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.  
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent  
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.  
Devices suspected of being affected should be replaced.  
Green compliance  
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-  
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce  
the use of hazardous substances and/or emissions.  
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with  
WEEE and ELV directives.  
Product status key:  
“Preview”  
“Active”  
Future device intended for production at some point. Samples may be available  
Product status recommended for new designs  
“Last time buy (LTB)”  
Device will be discontinued and last time buy period and delivery is in effect  
“Not recommended for new designs” Device is still in production to support existing designs and production  
“Obsolete”  
Production has been discontinued  
Datasheet status key:  
“Draft version”  
This term denotes a very early datasheet version and contains highly provisional information, which  
may change in any manner without notice.  
“Provisional version”  
“Issue”  
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  
However, changes to the test conditions and specifications may occur, at any time and without notice.  
This term denotes an issued datasheet containing finalized specifications. However, changes to  
specifications may occur, at any time and without notice.  
Zetex sales offices  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
© 2007 Published by Zetex Semiconductors plc  
Issue 1 - January 2007  
© Zetex Semiconductors plc 2007  
8
www.zetex.com  
配单直通车
ZXTP25012EFHTA产品参数
型号:ZXTP25012EFHTA
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
零件包装代码:SOT-23
包装说明:SOT-23, 3 PIN
针数:3
Reach Compliance Code:compliant
ECCN代码:EAR99
Factory Lead Time:12 weeks
风险等级:1.22
最大集电极电流 (IC):4 A
集电极-发射极最大电压:12 V
配置:SINGLE
最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-F3
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:PNP
最大功率耗散 (Abs):1.81 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:YES
端子面层:Matte Tin (Sn)
端子形式:FLAT
端子位置:DUAL
处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING
晶体管元件材料:SILICON
标称过渡频率 (fT):310 MHz
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