ZXTP749FTA原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

A Product Line of

Diodes Incorporated

ZXTP749F

25V PNP LOW SATURATION TRANSISTOR IN SOT23

Features

Mechanical Data

•

Case: SOT23

•

BV_CEO> -25V

BV_CEO> -35V forward blocking voltage

_C= -3A Continuous Collector Current

Low Saturation Voltage, V_CE(SAT)< -150mV @ -1A.

R_CE(sat)= 87mΩ for a low equivalent on-resistance

725mW power dissipation

h_FEcharacterised up to -6A for high current gain hold-up

Complementary NPN Type: ZXTN649F

Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Case Material: molded plastic, “Green” molding compound

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

I

•

Weight 0.008 grams (approximate)

Application

•

MOSFET gate drivers

Power switching in automotive and industrial applications

Motor drive and control

SOT23

E

C

B

E

Top View

Device Symbol

Top View

Pin-Out

Ordering Information (Note 4)

Product

ZXTP749FTA

Marking

1N8

Reel size (inches)

Tape width (mm)

Quantity per reel

7

8

3,000

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com

Marking Information

1N8 = Product type Marking Code

717

1N8

1 of 7

www.diodes.com

January 2013

ZXTP749F

Document Number: DS31901 Rev. 3 - 2

A Product Line of

Diodes Incorporated

ZXTP749F

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-35

-25

-7

Unit

V

Continuous Collector Current

Peak Pulse Current

-3

A

-6

A

I_CM

Base Current

-500

mA

I_B

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

P_D

Value

725

Unit

mW

°C/W

°C

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Leads (Note 6)

Operating and Storage Temperature Range

172

R_θJA

R_θJL

79

-55 to +150

T_J,T_STG

Notes:

5. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

6. Thermal resistance from junction to solder-point (at the end of the collector lead).

2 of 7

www.diodes.com

January 2013

ZXTP749F

Document Number: DS31901 Rev. 3 - 2

A Product Line of

Diodes Incorporated

ZXTP749F

Thermal Characteristics and Derating information

0.8

0.6

0.4

0.2

0.0

V_CE(sat)

10

Limited

1

DC

1s

100ms

100m

10ms

Single Pulse

T_amb=25°C

1ms

100µs

10

10m

100m

1

0

20

40 60 80 100 120 140 160

Temperature (°C)

-V_CECollector-Emitter Voltage (V)

Safe Operating Area

Derating Curve

180

160

140

120

T_amb=25°C

Single Pulse

T_amb=25°C

100

10

1

100 D=0.5

80

60

D=0.2

40

Single Pulse

D=0.05

D=0.1

20

0

100µ 1m 10m 100m

1

10

100

1k

100µ 1m 10m 100m

1

10

100

1k

Pulse Width (s)

Transient Thermal Impedance

Pulse Power Dissipation

3 of 7

www.diodes.com

January 2013

ZXTP749F

Document Number: DS31901 Rev. 3 - 2

A Product Line of

Diodes Incorporated

ZXTP749F

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

BV_CBO

BV_CEO

BV_EBO

Min

-35

-25

-7

Typ

-60

Max

Unit

V

Test Condition

I_C= -100µA

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 7)

Emitter-Base Breakdown Voltage

-

-40

V

I_C= -10mA

-8.4

V

I_E= -100µA

V_CB= -28V

V_CB= -28V, T_A= +100°C

V_EB= -5.6V

-50

-0.5

nA

µA

Collector Cutoff Current

Emitter Cutoff Current

-

<1

I_CBO

I_EBO

-50

nA

I_C= -100mA, V_CE= -2V

200

130

100

25

320

230

180

50

500

I

_C= -1A, V_CE= -2V

I_C= -2A, V_CE= -2V

_C= -6A, V_CE= -2V

-

Static Forward Current Transfer Ratio (Note 7)

-

h_FE

I

I_C= -1A, I_B= -100mA

I_C= -3A, I_B= -300mA

I_C= -1A, V_CE= -2V

I_C= -1A, I_B= -100mA

-85

-229

-150

-350

-

Collector-Emitter Saturation Voltage (Note 7)

mV

V_CE(sat)

Base-Emitter Turn-On Voltage (Note 7)

Base-Emitter Saturation Voltage (Note 7)

-

-786

-895

-850

mV

V_BE(on)

V_BE(sat)

-1000

Notes:

7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

4 of 7

www.diodes.com

January 2013

ZXTP749F

Document Number: DS31901 Rev. 3 - 2

A Product Line of

Diodes Incorporated

ZXTP749F

Typical Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

1

Tamb=25°C

I_C/I_B=10

0.3

0.2

0.1

0.0

I_C/I_B=100

I_C/I_B=50

100m

10m

1m

150°C

100°C

I_C/I_B=10

25°C

I_C/I_B=20

100m

-55°C

1m

10m

1

10m

100m

1

- I_CCollector Current (A)

V_CE(sat)v I_C

1.2

1.0

0.8

0.6

0.4

0.2

150°C

I_C/I_B=10

V_CE=-2V

500

400

300

200

100

0

-55°C

25°C

100°C

25°C

150°C

100°C

-55°C

1m

10m

100m

1

10

1m

10m

100m

1

- I_CCollector Current (A)

h_FEv I_C

V_BE(sat)v I_C

180

160

140

120

100

80

1.2

1.0

0.8

0.6

0.4

0.2

V_CE=-2V

f = 1MHz

-55°C

Cibo

25°C

60

150°C

40

Cobo

100°C

20

0

10m

100m

1

10

1m

10m

100m

1

- Voltage(V)

- I_CCollector Current (A)

Capacitance v Voltage

V_BE(on)v I_C

5 of 7

www.diodes.com

January 2013

ZXTP749F

Document Number: DS31901 Rev. 3 - 2

A Product Line of

Diodes Incorporated

ZXTP749F

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

SOT23

Dim

A

B

C

D

F

G

H

J

K

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013 0.10

0.903 1.10

-

0.45

0.085 0.18

0° 8°

Max

0.51

1.40

2.50

1.03 0.915

0.60 0.535

Typ

0.40

1.30

2.40

C

B

2.05

3.00

1.83

2.90

0.05

1.00

0.400

0.55

0.11

-

H

G

M

K

J

K1

L

M

-

D

F

0.61

L

α

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

Dimensions Value (in mm)

Z

X

Y

C

E

2.9

0.8

0.9

2.0

Z

C

1.35

E

X

6 of 7

www.diodes.com

January 2013

ZXTP749F

Document Number: DS31901 Rev. 3 - 2

A Product Line of

Diodes Incorporated

ZXTP749F

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

7 of 7

www.diodes.com

January 2013

ZXTP749F

Document Number: DS31901 Rev. 3 - 2

型号:	ZXTP749FTA
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	1.73
Is Samacsys：	N
最大集电极电流 (IC)：	3 A
集电极-发射极最大电压：	25 V
配置：	SINGLE
最小直流电流增益 (hFE)：	25
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.725 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号ZXTP749FTA的概述

产品型号ZXTP749FTA的Datasheet PDF文件预览

ZXTP749FTA相关产品

ZXTP749FTA相关文章

IC37:专业IC行业平台