AP09T10GH-HF
10
8
T
C
= 25 C
8
o
10V
7.0V
6.0V
I
D
, Drain Current (A)
6
T
C
= 150
o
C
10V
7.0V
6.0V
5.0V
I
D
, Drain Current (A)
6
5.0V
4
4
V
G
= 4.0V
2
2
V
G
= 4.0V
0
0
2
4
6
8
10
0
2
4
6
8
10
12
14
0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
700
2.4
I
D
=1.5A
T
C
=25 C
600
o
I
D
=3A
V
G
=10V
2.0
R
DS(ON)
(m
Ω
)
500
Normalized R
DS(ON)
2
4
6
8
10
1.6
400
1.2
300
0.8
200
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
4
I
D
=250uA
Normalized V
GS(th)
(V)
1.4
3
1.2
I
S
(A)
T
j
=150
o
C
2
T
j
=25
o
C
0.8
1
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
