AP1332GEU-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
20
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
1
-
-
-
1.3
0.3
0.5
21
53
100
125
38
17
12
Max.
-
-
600
2
1.25
-
1
10
+30
2
-
-
-
-
-
-
60
-
-
Unit
V
V/℃
mΩ
Ω
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
Static Drain-Source On-Resistance
2
V
GS
=4.5V, I
D
=600mA
V
GS
=2.5V, I
D
=300mA
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=600mA
V
DS
=20V, V
GS
=0V
V
GS
=+8V, V
DS
=0V
I
D
=600mA
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=600mA
R
G
=3.3Ω,V
GS
=5V
R
D
=16.7Ω
V
GS
=0V
V
DS
=10V
f=1.0MHz
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=16V ,V
GS
=0V
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Test Conditions
I
S
=300mA, V
GS
=0V
Min.
-
Typ.
-
Max.
1.2
Unit
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.Surface mounted on FR4 board, t
≦
10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
