AP1332GEU-HF
10
100
f=1.0MHz
I
D
=0.6A
V
GS
, Gate to Source Voltage (V)
8
6
V
DS
=10V
V
DS
=12V
V
DS
=16V
C (pF)
C
iss
4
C
oss
2
C
rss
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
10
1
3
5
7
9
11
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
100us
1
0.2
0.1
I
D
(A)
1ms
0.1
0.1
0.05
0.02
0.01
P
DM
10ms
T
A
=25 C
Single Pulse
0.01
0.1
1
10
100
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
o
100ms
DC
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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