AP13P15GH/J-HF
25
20
15
10
5
25
20
15
10
5
T C = 150 o
C
-10V
-7.0V
-10V
T C =25 o C
-7.0V
-5.0V
-4.5V
-5.0V
-4.5V
V
G = - 3 .0V
V
G = - 3 .0V
0
0
0
5
10
15
20
25
0
5
10
15
20
25
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1400
1000
600
2.3
1.8
1.3
0.8
0.3
I D =- 7 A
I D = -7 A
V
G =-10V
T
C =25 ℃
Ω
200
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
4
2
0
1.5
1.1
0.7
0.3
T j =150 o
C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
