AP13P15GH/J-HF
f=1.0MHz
12
10000
1000
100
10
I D = -7A
V
DS = -120V
C iss
8
6
4
2
0
C oss
C rss
10
1
5
9
13
17
21
25
29
0
10
20
30
40
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
100us
1ms
10
0.2
0.1
0.1
0.05
10ms
100ms
DC
PDM
t
1
0.02
T
0.01
Duty factor = t/T
T C =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.01
0.1
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
6
4
2
0
VG
V DS =-5V
QG
T j =25 o C
T j =150 o C
-10V
QGD
QGS
Q
Charge
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
