AP15T20GI-HF
30
20
10
0
16
12
8
T C = 25 o
C
10V
7.0V
6.0V
10V
7.0V
6.0V
T C =150 o C
5.0V
5.0V
V G =4.0V
V GS =4.0V
4
0
0
4
8
12
16
20
0
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1.4
1.2
1
2.8
2.4
2
I D =5A
I D =1mA
V
GS =10V
1.6
1.2
0.8
0.4
0
0.8
0.6
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
1.6
1.2
0.8
0.4
0
8
6
4
2
0
I D =250uA
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
