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AP15T20GI-HF 参数 Datasheet PDF下载

AP15T20GI-HF图片预览
型号: AP15T20GI-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 65 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
 浏览型号AP15T20GI-HF的Datasheet PDF文件第1页浏览型号AP15T20GI-HF的Datasheet PDF文件第2页浏览型号AP15T20GI-HF的Datasheet PDF文件第3页  
AP15T20GI-HF  
f=1.0MHz  
12  
2400  
2000  
1600  
1200  
800  
400  
0
I D =5A  
V
DS =160V  
10  
8
C iss  
6
4
2
C oss  
C rss  
25  
0
0
10  
20  
30  
40  
50  
60  
1
5
9
13  
17  
21  
29  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
100  
10  
1
Duty factor=0.5  
Operation in this area  
limited by R  
DS(ON)  
0.2  
0.1  
100us  
1ms  
0.1  
0.05  
PDM  
t
10ms  
100ms  
1s  
DC  
0.02  
T
0.01  
Duty factor = t/T  
Peak Tj = PDM x Rthjc + TC  
T c =25 o C  
Single Pulse  
Single Pulse  
0
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
10V  
QGD  
QGS  
10%  
VGS  
t
td(on) tr  
d(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4