AP2309GN
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
T A = 150 o
C
-10V
T A =25 o C
-10V
-7.0V
-7.0V
-5.0V
-4.5V
-5.0V
-4.5V
V
G = - 3 .0V
V
G = - 3 .0V
0
0
0
2
4
6
8
10
0
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
105
95
85
75
65
55
1.6
1.4
1.2
1.0
0.8
0.6
I D =3A
I D =-2.6A
T A =25 o C
V G =10V
Ω
Ω
Ω
Ω
3
5
7
9
11
-50
0
50
100
150
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.3
1.1
0.9
0.7
3
2
1
0
T j =150 o
C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
