AP2309GN
f=1.0MHz
C iss
12
1000
100
10
I D = - 3 A
10
V
DS = -24V
8
6
4
2
0
C oss
C rss
0
2
4
6
8
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
0.2
10
0.1
0.1
0.05
1ms
1
PDM
t
0.01
T
0.01
Duty factor = t/T
10ms
Single Pulse
Peak Tj = PDM x Rthja + Ta
0.1
Rthja = 270℃/W
T A =25 o C
Single Pulse
100ms
1s
DC
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
tr
td(on)
td(off)tf
Charge
Q
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
