AP2311GN
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=-250uA
Min.
-60
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.04
200
240
-
2
-
-
-
6
1
3
8
5
22
3
510
50
40
6.4
Max. Units
-
-
250
300
-3
-
-10
-25
±100
10
-
-
-
-
-
-
810
-
-
9.6
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-1.8A
V
GS
=-4.5V, I
D
=-1.4A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-1A
V
DS
=-60V, V
GS
=0V
V
DS
=-48V, V
GS
=0V
V
GS
=±20V
I
D
=-1A
V
DS
=-48V
V
GS
=-4.5V
V
DS
=-30V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-10V
R
D
=30Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=-1.2A, V
GS
=0V
I
S
=-1A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
30
38
Max. Units
-1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 270
℃/W
when mounted on
Min. copper pad.
2/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
