AP2311GN
10
10
T
A
=25
o
C
-I
D
, Drain Current (A)
7.5
5
V
G
= - 3 .0V
-I
D
, Drain Current (A)
-10V
-7.0V
-5.0V
-4.5V
T
A
= 150 C
8
o
-10V
-7.0V
-5.0V
-4.5V
5
V
G
= - 3 .0V
2.5
3
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
7
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
250
2.0
I
D
=-1.4A
240
T
A
=25
o
C
1.6
I
D
=-1.8A
V
G
=-10V
230
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.2
220
0.8
210
200
2
4
6
8
10
0.4
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
2.0
-I
S
(A)
T
j
=150
o
C
1.0
T
j
=25
o
C
Normalized -V
GS(th)
(V)
1.2
1.4
1.5
1.3
1.0
0.5
0.8
0.0
0
0.2
0.4
0.6
0.8
1
0.5
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
3/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
