AP2344GN-HF
30
30
T
A
=25 C
o
I
D
, Drain Current (A)
20
I
D
, Drain Current (A)
5.0V
4.5V
3.5V
2.5V
V
G
=1.8V
T
A
=150 C
o
20
5.0V
4.5V
3.5V
2.5V
V
G
=1.8V
10
10
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
24
1.8
I
D
=2A
T
A
=25
o
C
22
1.6
I
D
=6A
V
GS
=4.5V
Normalized R
DS(ON)
1
2
3
4
5
R
DS(ON)
(m
Ω
)
1.4
20
1.2
1.0
18
0.8
16
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
8
I
D
=1mA
1.6
6
T
j
=150
o
C
I
S
(A)
T
j
=25
o
C
Normalized V
GS(th)
1.2
4
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
