AP2344GN-HF
6
2000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=6A
V
DS
=10V
5
1600
C
iss
4
1200
3
C (pF)
800
400
2
1
C
oss
C
rss
0
0
8
16
24
32
0
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thja
)
DUTY=0.5
0.2
100us
1ms
0.1
0.1
I
D
(A)
0.05
1
0.02
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 270℃/W
10ms
0.1
0.01
Single Pulse
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
100ms
1s
DC
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
V
G
I
D
, Drain Current (A)
6
Q
G
4.5V
4
Q
GS
Q
GD
2
Charge
0
25
50
75
100
125
150
Q
T
A
, Ambient Temperature ( C )
o
Fig 11. Maximum Continuous Drain
Current v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
