欢迎访问ic37.com |
会员登录 免费注册
发布采购

AP4415GJ 参数 Datasheet PDF下载

AP4415GJ图片预览
型号: AP4415GJ
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型功率MOSFET [P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 6 页 / 181 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
 浏览型号AP4415GJ的Datasheet PDF文件第2页浏览型号AP4415GJ的Datasheet PDF文件第3页浏览型号AP4415GJ的Datasheet PDF文件第4页浏览型号AP4415GJ的Datasheet PDF文件第5页浏览型号AP4415GJ的Datasheet PDF文件第6页  
AP4415GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
G
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-35V
36mΩ
-24A
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP4415GJ) is
available for low-profile applications.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-35
±25
-24
-15
-80
31.25
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
4
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200805263