AP4415GH/J
50
40
30
20
10
0
50
40
30
20
10
0
-10V
-7.0V
-10V
-7.0V
T C = 25 o C
T C = 150 o C
-5.0V
-4.5V
-5.0V
-4.5V
V G = -3.0 V
V G = -3.0 V
0
2
4
6
8
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
105
85
65
45
25
1.6
I D = - 16 A
V G = -10V
I D = - 12 A
1.4
1.2
1.0
0.8
0.6
T
C =25 ℃
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.5
1.0
0.5
0.0
7.0
5.3
3.5
1.8
0.0
T j =150 o C
T j =25 o C
2.01E+08
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
