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AP4412GM 参数 Datasheet PDF下载

AP4412GM图片预览
型号: AP4412GM
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 6 页 / 68 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP4412GM
8
3
7
6
I
D
, Drain Current (A)
2
5
4
3
1
2
1
0
25
50
75
100
125
150
P
D
(W)
0
0
50
100
150
T
c
, Case Temperature ( C)
o
T
c ,
Case Temperature (
o
C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Duty Factor = 0.5
Normalized Thermal Response (R
thja
)
10
0.2
1ms
10ms
0.1
0.1
0.05
I
D
(A)
1
0.02
0.01
100ms
1s
0.1
P
DM
0.01
Single Pulse
t
T
10s
T
C
=25
o
C
Single Pulse
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=125
o
C/W
DC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS
(V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4/6