AP4513GH
P-Channel
30
30
T
C
=25
o
C
- 10V
- 7.0V
- 5.0V
-I
D
, Drain Current (A)
- 4.5V
20
T
C
= 150 C
o
- 10V
- 7.0V
-I
D
, Drain Current (A)
20
- 5.0V
- 4.5V
10
10
V
G
= - 3.0V
V
G
= - 3.0V
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
500
1.8
I
D
= -3 A
400
T
C
=25
o
C
Normalized R
DS(ON)
1.4
I
D
= -5 A
V
G
= - 10V
R
DS(ON)
(m
Ω
)
300
200
1.0
100
0
2
4
6
8
10
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
4
3
Normalized -V
GS(th)
(V)
1.1
-I
S
(A)
2
T
j
=150
o
C
T
j
=25
o
C
0.7
1
0
0.3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
