AP4563GH
N-Channel
f=1.0MHz
12
10000
V
GS
, Gate to Source Voltage (V)
9
I
D
= 20 A
V
DS
= 30 V
1000
C
iss
6
C (pF)
C
oss
100
C
rss
3
0
0
5
10
15
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
I
D
(A)
0.1
10
0.1
0.05
1ms
T
C
=25
o
C
Single Pulse
1
0.1
1
10
100
1000
P
DM
0.02
t
T
10ms
100ms
1s
DC
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V
DS
=5V
40
V
G
Q
G
I
D
, Drain Current (A)
30
T
j
=25 C
o
T
j
=150 C
o
4.5V
Q
GS
Q
GD
20
10
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
