AP75T10S/P
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=16A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=100V, V
GS
=0V
V
DS
=80V ,V
GS
=0V
V
GS
= ±20V
I
D
=30A
V
DS
=80V
V
GS
=4.5V
V
DS
=50V
I
D
=30A
R
G
=10Ω,V
GS
=10V
R
D
=1.6Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Test Conditions
I
S
=30A, V
GS
=0V
I
S
=30A, V
GS
=0V
dI/dt=100A/µs
Min.
100
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
0.09
-
-
-
52
-
-
-
69
12
39
12
75
220
250
5690
540
605
1.1
Typ.
-
51
74
Max. Units
-
-
15
21
3
-
10
100
±100
110.4
-
-
-
-
-
-
9100
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Symbol
V
SD
t
rr
Q
rr
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Source-Drain Diode
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
