AP90T03GR
200
160
T
C
=25 C
160
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
140
T
C
= 1 50
o
C
120
10V
7.0V
5.0V
4.5V
100
120
V
G
=3.0V
80
80
V
G
=3.0V
60
40
40
20
0
0
1
2
3
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
5.0
2.0
I
D
=20A
Normalized R
DS(ON)
T
C
=25
o
C
R
DS(ON)
(m
Ω
)
4.5
1.8
1.5
I
D
= 45 A
V
G
=10V
1.3
1.0
0.8
4.0
0.5
0.3
3.5
0.0
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
20
15
1.5
V
GS(th)
(V)
T
j
=150
o
C
Is (A)
10
T
j
=25
o
C
1
5
0.5
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-50
25
100
175
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
