AP9563H/J
100
90
T
A
= 25 C
80
o
-10V
-7.0V
-I
D
, Drain Current (A)
80
T
A
=150
o
C
-10V
-7.0V
70
-I
D
, Drain Current (A)
60
60
-5.0V
40
50
-5.0V
-4.5V
40
-4.5V
30
20
V
G
= -3.0 V
20
V
G
= -3.0 V
10
0
0
2
4
6
8
10
12
14
0
0
2
4
6
8
10
12
14
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
46
1.8
42
I
D
= -12 A
T
C
=25
℃
Normalized R
DS(ON)
1.6
I
D
=-16A
V
G
=-10V
1.4
R
DS(ON)
(m
Ω
)
38
1.2
1.0
34
0.8
30
0.6
3
5
7
9
11
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
6
5
2
4
3
T
j
=150
o
C
T
j
=25
o
C
-V
GS(th)
(V)
-I
S
(A)
1.5
2
1
1
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature